| Product Type | Memory Module |
|---|---|
| Memory Capacity | 16 GB |
| Memory Technology | DDR5 |
| Product Voltage | 1.1 V |
| RAM Speed | 5600 MHz |
| RAM Standard | DDR5-5600/PC5-44800 |
| Error Identifying | ECC |
| Signal Type | Registered |
| Column Access Strobe (CAS) | CL46 |
| Rank | Dual Rank |
| Quantity of Pins | 288-pin |
| RAM Genre | RDIMM |
This DDR5-5600 Registered ECC module is engineered for enterprise servers and mission-critical workstations, where its dual-rank organization maximizes memory bank interleaving for improved throughput in virtualized environments and in-memory databases. The combination of ECC error correction and registered signal buffering ensures uncompromising data integrity and stability at 1.1 V, making it ideal for 24/7 operation under heavy transactional loads.
1. Next-generation DDR5 technology delivers twice the bandwidth per channel, enabling servers to handle surging data streams in real-time analytics and AI inference workloads without bottlenecks.
2. The elevated transfer rate keeps pace with high-core-count CPUs, ensuring low latency access to hot datasets and smooth performance in heavily virtualized environments.
3. Integrated ECC silently corrects single-bit memory errors, preserving data integrity around the clock for mission-critical databases and financial transactions.
4. Registered clock driver circuitry stabilizes the command interface, allowing dense memory populations to coexist on the same bus without signal degradation.
5. Dual rank interleaving maximizes bank-level parallelism, sustaining high throughput under concurrent VM consolidation and reducing memory access stalls.
Designed for modern servers, the Micron MTC10F1084S1RC56BD1R is a 16GB DDR5-5600 RDIMM that directly addresses the critical pain points of data centers and enterprise IT. In a dense virtualization cluster hosting dozens of VMs, Registered signal buffering decouples the memory controller from the DRAM chips, allowing you to populate all DIMM slots with rock-solid stability and scale to terabyte-level capacity without electrical loading failures—meaning fewer unexpected host crashes during peak loads. The integrated ECC continuously corrects single-bit flips caused by background radiation, an absolute necessity when a silent bit error in an in-memory database like Redis or SAP HANA could corrupt a financial transaction or patient record. Meanwhile, the dual-rank organization enables rank interleaving, so while one rank is refreshing or busy, the controller accesses the other; this parallelism significantly accelerates large dataset queries and writes under concurrent OLTP workloads. At a swift 5600 MT/s and a low 1.1V operating voltage, it delivers the bandwidth to feed data-hungry analytics engines while reducing thermal stress and power bills, making it a decisive upgrade for scalable, mission-critical infrastructure.
Memory Type Identification
The Micron MTC10F1084S1RC56BD1R is a 16GB DDR5-5600 Registered DIMM (RDIMM) with ECC, 1.1V, and dual-rank organization. These characteristics — registered buffering, error correction, and server-grade RAS features — are exclusive to server-class memory, unsuitable for desktop or laptop platforms that require unbuffered DIMMs or SODIMMs.
General Virtualization
Deploy RDIMMs in balanced channel configurations to prevent memory bottlenecks under multi-VM workloads. A typical dual-socket system with 8 channels per CPU benefits from 16 identical 16GB modules (256GB total) to populate one DIMM per channel, maximizing bandwidth while leaving room for future scaling.
In-Memory Database
In-memory databases demand both capacity and low latency, making dual-rank RDIMMs such as this module advantageous for interleaving. For Redis or SAP HANA footprints, fill all channels with these 16GB modules to reach 512GB–1TB; dual rank improves command/address efficiency under heavy transactional loads without sacrificing the data integrity that ECC provides.
High-Performance Computing (HPC)
HPC applications require consistent, error-free throughput over extended runs. Install one 16GB RDIMM per memory channel (1DPC) to sustain 5600 MT/s speeds and avoid signal degradation. For dense compute nodes, a 256GB configuration using 16 modules balances memory bandwidth, core count, and power budget while registered buffering stabilizes large arrays of DIMMs during parallel simulations.
Rigorously tested, compatible with Dell PowerEdge R760, HPE ProLiant DL380 Gen11, Lenovo ThinkSystem SR650 V3.
Q: Can I mix this MTC10F1084S1RC56BD1R with other memory modules of different brands or speeds?
A: Mixing modules is not recommended in server environments. Different brands or speeds may cause signal integrity issues, system instability, or disable ECC functionality, compromising data protection and overall reliability.
Q: Is this memory compatible with my system?
A: This DDR5-5600 ECC Registered DIMM is designed for compatible Intel Xeon Scalable or AMD EPYC platforms. Verify your server board’s memory QVL for support of 288-pin RDIMMs with 16GB dual-rank configuration.
Q: What is the recommended DIMM population order for optimal performance?
A: Follow your server motherboard's manual. Generally, populate identical DIMMs per channel, starting with the slots farthest from the CPU. Balanced configurations across all memory channels ensure optimal bandwidth and interleaving.
Q: Does this module support overclocking or XMP profiles?
A: No. This Registered ECC module adheres to JEDEC DDR5-5600 standard profiles. It prioritizes data integrity and operational stability over overclocking, which is typical for mission-critical server deployments.
Q: What warranty and typical failure rate can I expect?
A: This module carries a 1-year warranty. Expected annualized failure rate is very low, consistent with enterprise-grade RDIMMs built with rigorous testing and screening for 24/7 server reliability.