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| Product Type | Memory Module |
|---|---|
| Compliance Standards | RoHS |
| Memory Capacity | 4 GB |
| Memory Technology | DDR3 |
| Product Voltage | 1.35 V |
| RAM Speed | 1600 |
| RAM Standard | DDR3-1600/PC3-12800 |
| Error Identifying | Non-ECC |
| Signal Type | Unbuffered |
| Column Access Strobe (CAS) | CL11 |
| Rank | Dual Rank |
| Quantity of Pins | 204-pin |
| RAM Genre | SoDIMM |
This DDR3L-1600 SoDIMM is a non-ECC unbuffered memory module optimized for notebook upgrades and mobile workstations, where its low 1.35V operating voltage directly extends battery life and reduces thermal stress in compact enclosures. Its dual-rank organization boosts effective bandwidth through rank interleaving, while the CL11 latency and unbuffered signal path ensure plug-and-play stability across a broad range of DDR3-compatible laptops.
1. 1.35V ultra-low voltage dramatically reduces power draw, effectively stretching battery life through a full workday without the thermal throttle common in tightly packed ultrabooks.
2. 4 GB capacity gives a tired notebook a new lease on multitasking, handling simultaneous browser tabs, document editing, and video calls with far fewer lags.
3. The SoDIMM form factor makes this module a truly plug-and-play upgrade, requiring no tools or technical know-how to instantly revitalize a sluggish portable system.
4. Dual rank organization interleaves memory banks for higher effective bandwidth, which noticeably sharpens integrated graphics output during presentation streaming and light photo editing.
5. DDR3-1600 throughput ensures responsive application launches and fluid window transitions, critical for mobile professionals who jump between tasks throughout their day.
The Micron MT16JTF51264HZ-1G4M1 is a notebook‑grade DDR3L‑1600 SODIMM, purpose‑built for mobile platforms where every milliwatt and millimeter counts. Its low 1.35 V operating voltage directly extends battery runtime during sustained workloads—for a field engineer running CAD models on a mobile workstation or a student compiling code in a café, this means hours of added productivity without hunting for a power outlet. The 204‑pin small‑outline form factor fits the tight confines of ultrabooks and mini‑ITX thin clients, eliminating the compatibility guesswork that plagues aftermarket upgrades. Being unbuffered and non‑ECC keeps latency minimal and guarantees seamless plug‑and‑play installation in consumer and business laptops alike, so an IT technician can refresh a fleet of aging notebooks in minutes, not hours. Dual‑rank organization further improves overall bandwidth by allowing the memory controller to interleave deeper data patterns, which reduces stutter during memory‑intensive multitasking—think of exporting a 4K video while running a virtual meeting and a dozen browser tabs. In both lightweight ultraportable upgrades and mobile workstation refreshes, this module delivers the longevity, easy integration, and steady efficiency that directly translate to less downtime and lower total cost of ownership.
Capacity Planning for a 4 GB DDR3L-1600 SoDIMM
This is a notebook-grade 204-pin SoDIMM. Its 1.35 V low-voltage operation makes it particularly suitable for mobile, battery-conscious upgrades.
Laptop Upgrade
If a second slot is free, add an identical 4 GB module to create an 8 GB dual-channel configuration, boosting responsiveness for web browsing and office multitasking. For systems with a single slot, replace the module with an 8 GB DDR3L stick to double capacity while preserving the power efficiency of low-voltage memory.
Mobile Workstation
For CAD, data analysis, or virtual machines, maximize both slots with 8 GB modules to achieve 16 GB total. This configuration provides sufficient headroom for large working sets, reduces disk swapping, and maintains stability under sustained professional workloads.
Ultrabook Power Saving
The 1.35 V specification significantly lowers power draw compared to standard 1.5 V DDR3, directly extending battery runtime in slim notebooks. A single 4 GB module is adequate for light productivity tasks; when upgrading, always opt for DDR3L parts. Move to an 8 GB dual-channel setup only if running heavier multitasking or virtual desktops, as extra capacity can marginally increase idle power.
This DDR3L SODIMM is rigorously tested and compatible with laptops like Lenovo ThinkPad T430, Dell Latitude E6430, HP EliteBook 8470p.
Q: Can I mix this MT16JTF51264HZ-1G4M1 with other memory modules of different brands or speeds?
A: Mixing is possible but not recommended. The system will default to the slowest module's speed and timings, potentially causing instability. For optimal reliability, use identical modules with matching capacity, rank, and voltage.
Q: Is this memory compatible with my laptop?
A: Compatibility depends on your notebook model. This 204-pin DDR3L SoDIMM works with Intel 5/6/7 Series or AMD A-series chipsets that support 1.35V low-voltage memory. Please consult your laptop's specification or use our online configurator.
Q: What is the recommended DIMM population order for optimal performance?
A: For dual-channel performance, install identical modules in pairs across the available slots. With this dual-rank SoDIMM, populating both slots with the same part number ensures the best memory bandwidth and system responsiveness.
Q: Does this module support overclocking or XMP profiles?
A: No, this unbuffered SoDIMM adheres to JEDEC standard DDR3-1600 CL11 timings and does not include XMP profiles. Notebook platforms typically do not support memory overclocking, ensuring stable operation within manufacturer specifications.
Q: What warranty and typical failure rate can I expect?
A: This memory module includes a 1-year warranty. It is built with RoHS-compliant components and subjected to rigorous testing, resulting in an extremely low annualized failure rate under normal operating conditions.