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Samsung M393B2K70BM1-CF8Q5 16GB DDR3 RDIMM 1066MT/s | Server RAM

MPN:M393B2K70BM1-CF8Q5 By:Samsung Warranty:1 year
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General

ModelM393B2K70BM1-CF8Q5
Product TypeMemory Module
Compliance StandardsEU RoHS,FCC
Memory Capacity16 GB
Memory TechnologyDDR3
Product Voltage1.5V
RAM Speed1066MHz
RAM StandardDDR3-1066/PC3-8500
Error IdentifyingECC
Signal TypeRegistered
Column Access Strobe (CAS)CL7
RankQuad Rank x4
Quantity of Pins240-pin
RAM GenreRDIMM

Engineer's Note

This 16 GB DDR3-1066 RDIMM, equipped with ECC and a registered signal path, is specifically engineered for legacy server and workstation platforms requiring uncompromised data integrity, such as virtualization hosts and in-memory databases. Its Quad Rank x4 organization maximizes channel density while the registered logic stabilizes multi-DIMM configurations, and the tight CL7 latency delivers responsive access for sustained enterprise workloads.

Technical Specs & Insights

1. Registered signal buffering stabilizes command and address integrity across fully loaded memory channels, eliminating electrical noise that could otherwise cause silent crashes in multi-tenant cloud nodes.
2. ECC memory actively detects and corrects single-bit errors in real time, preserving transaction accuracy for financial databases and preventing costly data corruption in virtualized environments.
3. Quad Rank x4 organization packs more logical banks into a single module, enabling hypervisors to assign larger memory footprints to virtual machines without exhausting physical DIMM slots.
4. Sixteen gigabytes per stick allow high-density server builds, supporting memory-hungry in-memory analytics platforms and expanding headroom for VDI instances on each rack unit.
5. DDR3-1066 speed delivers steady, predictable throughput that keeps legacy ERP and web-serving workloads responsive, avoiding the latency penalties of oversubscribed memory buses under sustained load.

Why These Specs Matter

For server environments, the Samsung M393B2K70BM1-CF8Q5 DDR3-1066 RDIMM turns four technical attributes into critical operational advantages. ECC memory corrects single-bit errors on the fly, preventing a silent bit-flip from crashing a hypervisor and all its hosted virtual machines—a life-saver in dense virtualization clusters. The registered buffer isolates the controller from Quad Rank x4 electrical demands, allowing fully populated multi-channel configurations; this keeps in-memory databases like SAP HANA stable at terabyte-scale deployments. The quad-rank, x4 architecture packs 16 GB into a single module, so a dual-socket server reaches 256 GB with just 16 modules while leaving slots free for expansion. That high per-module capacity reduces component count, lowering power draw and sparing budget without sacrificing headroom. For IT teams, this means rock-solid virtualization, effortless scaling for data lakes, and consistently low latency under OLTP workloads.

Endurance & Reliability

Capacity Planning Guide for DDR3-1066 ECC Registered 16GB RDIMM

Based on the spec — DDR3-1066 16GB Quad Rank x4 ECC Registered RDIMM — this is a server memory module ideal for stable, error‑correcting workloads. Below are the recommended configurations for three typical server scenarios.

General Virtualization
In a consolidated virtualization host, memory oversubscription must be avoided. Deploy modules in multiples of three per CPU to populate all memory channels for optimal bandwidth, targeting 96 GB (6×16 GB) or 192 GB (12×16 GB) per socket. This dual‑ or quad‑rank population keeps latency low while ECC safeguards guest integrity. Always match identical RDIMMs to maintain balanced interleaving and avoid NUMA imbalances.

In‑Memory Database
For in‑memory databases demanding data reliability at moderate clock speeds, density takes precedence. Equip each server node with 12 to 24 DIMMs, delivering 192 GB to 384 GB total capacity. The quad‑rank design of this 16 GB module maximises capacity per slot on two‑DPC platforms. ECC and registered buffering ensure data consistency, though the 1066 MHz speed is sufficient for memory‑resident workloads bound by dataset size rather than raw bandwidth.

High Performance Computing
HPC clusters favour maximum memory bandwidth over raw capacity. Populate all channels uniformly — typically 8 or 16 identical 16 GB RDIMMs per node — to achieve balanced quad‑channel or eight‑channel interleaving. Although 1066 MHz is modest, the quad‑rank configuration boosts bandwidth via simultaneous bank access. In dense compute nodes, this yields stable floating‑point throughput and reduced page‑miss penalties under sustained parallel workloads.

Verified Compatibility

Rigorously tested DDR3 server DIMM, validated for Dell PowerEdge R710, HP ProLiant DL380 G7, and IBM System x3650 M3.

FAQ

Q: Can I mix this M393B2K70BM1-CF8Q5 with other memory modules of different brands or speeds?

A: Mixing is strongly discouraged. For registered ECC server memory, identical part numbers and speeds ensure signal integrity. Mismatched DIMMs may cause POST failures or critical system instability.

Q: Is this memory compatible with my system?

A: This DDR3-1066 Registered ECC RDIMM is designed for servers using Intel Xeon 5500/5600 or AMD Opteron 6100 series platforms. Verify your board supports 240-pin DDR3 RDIMMs and quad-rank configurations.

Q: What is the recommended DIMM population order for optimal performance?

A: Populate identical DIMMs across all memory channels first, using the farthest slot from the CPU per channel. For this quad-rank module, limit to two DIMMs per channel to maintain rated speed.

Q: Does this module support overclocking or XMP profiles?

A: No. This is a JEDEC-compliant server DIMM strictly running at DDR3-1066 with CL7 timing. It does not support overclocking or XMP profiles, prioritizing stability over adjustable performance.

Q: What warranty and typical failure rate can I expect?

A: This Samsung module is covered by a one-year warranty. Built for enterprise workloads, it undergoes rigorous testing, resulting in a very low annualized failure rate. Exact MTBF data is available from Samsung.

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