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Samsung M396B2K73DH0-YF7M2 16GB DDR3 CDIMM 1066MHz | Registered ECC

MPN:M396B2K73DH0-YF7M2 By:Samsung Warranty:1 year
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General

Product TypeMemory Module
Memory Capacity16 GB
Memory TechnologyDDR3
Product Voltage1.5V
RAM Speed1066MHz
RAM StandardDDR3-1066/PC3-8500
Error IdentifyingECC
Signal TypeRegistered
Column Access Strobe (CAS)CL7
RankDual Rank x8
Quantity of Pins276-pin
RAM GenreCDIMM

Engineer's Note

This DDR3-1066 registered ECC memory module is purpose-built for legacy server platforms handling virtualization, in-memory databases, and other mission-critical workloads that demand uncompromising data integrity. The dual-rank x8 organization combined with CL7 low latency optimizes memory bandwidth utilization, while the registered signal architecture ensures robust electrical stability across fully populated multi-DIMM channels.

Technical Specs & Insights

1. ECC protection silently corrects single-bit memory errors in the background, eliminating silent data corruption risks for financial transaction logs and virtualized database instances.
2. Registered signal buffering decouples the memory controller from the electrical load of multiple DIMMs, preserving crisp command integrity in densely packed enterprise racks.
3. A generous 16GB per stick consolidates high memory capacity into fewer slots, leaving headroom to scale virtual machines and in-memory caches without swapping to storage.
4. Dual Rank x8 organization overlaps internal bank accesses to keep data buses busy, delivering consistent bandwidth under the concurrent request storms typical of multi-tenant cloud hosts.
5. CL7 low-latency timing reduces the cycle penalty when the CPU fetches scattered data, trimming microseconds off query responses that directly translate to snappier SaaS performance.

Why These Specs Matter

In a virtualized data center where a single memory error can silently corrupt financial records or bring down an entire cluster, the M396B2K73DH0-YF7M2 16GB DDR3-1066 Registered ECC CDIMM is a safeguard you cannot afford to skip. Its ECC technology actively detects and corrects single-bit errors, preserving data integrity when the hypervisor juggles multiple VM workloads; without ECC, a cosmic ray-induced bit flip could cause database inaccuracy or unexpected host crashes. The Registered buffer decouples the command/address bus from the memory controller, enabling you to install up to twelve such DIMMs per server without signal collapse, which is essential for dense virtual desktop infrastructure or large-scale server consolidation. The dual-rank x8 design and CL7 latency heighten bandwidth through interleaving, delivering the consistent low-latency responses that in-memory databases like SAP HANA demand. Finally, the 1.5V standard and 276-pin CDIMM format guarantee drop-in compatibility with legacy blade servers, maximizing existing investment. This means you can host more VMs and run faster queries confidently, turning aging hardware into a reliable virtualization and database engine.

Endurance & Reliability

General Virtualization
For virtualized hosts, capacity is your first priority. Populate all available memory channels with identical 16GB Registered ECC modules to maximize RAM headroom for multiple VMs. A balanced starting point is four to six modules (64–96 GB), allowing you to overcommit memory safely while maintaining data integrity.

In-Memory Database
In-memory databases demand large, reliable capacity far above raw speed. Deploy these 16 GB RDIMMs in a fully populated configuration—often 8 or 12 modules per socket—to reach 128 GB or more. The ECC and registered signaling protect critical in-flight data, and dual‑rank x8 organization helps sustain latency-sensitive transaction throughput under heavy loads.

High-Performance Computing (HPC)
HPC clusters benefit from consistent memory bandwidth across channels. Install an equal number of these DDR3‑1066 modules in each memory channel, typically one or two DIMMs per channel, to avoid bandwidth bottlenecks. While 1066 MHz is modest, populating all channels with dual‑rank DIMMs yields solid aggregate throughput for parallel workloads. Aim for 64–128 GB per node to keep most working sets resident in memory without excessive paging.

Verified Compatibility

Rigorously tested and verified compatible with IBM Power 720, 740, 750, 760, 770, 780 servers.

FAQ

Q: Can I mix this M396B2K73DH0-YF7M2 with other memory modules of different brands or speeds?

A: Mixing registered ECC modules with different brands or speeds is strongly discouraged. It often leads to instability, ECC errors, or system failure. For server reliability, always use identical, matched DIMMs across all channels.

Q: Is this memory compatible with my system?

A: This DDR3-1066 Registered ECC CDIMM suits Intel and AMD server platforms supporting 1066MHz registered DIMMs. Verify your board accepts 276-pin, dual-rank x8, 1.5V ECC RDIMMs to guarantee proper operation.

Q: What is the recommended DIMM population order for optimal performance?

A: Populate identical DIMMs per channel, starting with the slot farthest from the CPU. Follow your server manual to enable dual-rank interleaving and mirroring. This maximizes memory bandwidth and maintains signal integrity.

Q: Does this module support overclocking or XMP profiles?

A: No. As an enterprise Registered ECC module, it runs strictly at JEDEC standard DDR3-1066. Overclocking and XMP are not supported because data integrity and 24/7 stability are critical in server environments.

Q: What warranty and typical failure rate can I expect?

A: This Samsung module includes a 1-year warranty. Built with rigorously binned DRAM and ECC circuitry, it exhibits an extremely low annualized failure rate, typically under 0.2%, ensuring long-term enterprise reliability.

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