General

Engineer's Note

Designed as a server-class DDR3 RDIMM, this module is ideal for virtualization platforms and in-memory databases where data integrity is critical. Its Registered signal architecture and ECC error correction ensure stable operation under heavy loads, while the low 1.35V voltage and Quad Rank x8 configuration help maximize capacity density in multi-DIMM server deployments.

Technical Specs & Insights

1. Error Correcting Code (ECC) proactively detects and corrects single-bit memory errors, safeguarding transactional data integrity in mission-critical database servers.
2. Registered signal buffering stabilizes command and address lines, enabling deployment of high-density memory configurations without signal degradation in large-scale virtualization hosts.
3. Quad Rank module design doubles the DRAM devices per channel, maximizing memory footprint per server node for memory-hungry in-memory analytics and dense container orchestration.
4. A 16-gigabyte capacity per module supplies ample headroom for multiple virtual machines, ensuring smooth live migration and consistent performance under peak loads.
5. Operating at just 1.35 volts, this low-voltage DDR3L module significantly cuts power consumption and cooling overhead across sprawling data center racks, lowering total cost of ownership.

Why These Specs Matter

The Samsung M393B2K70DMB-YH909 is a 16GB DDR3 Registered ECC DIMM purpose-built for server reliability, and its four defining characteristics directly resolve the real-world pain points of enterprise IT. ECC corrects single-bit errors on the fly, ensuring that transactional databases and financial ledgers never suffer silent data corruption—a single flipped bit can otherwise cascade into a costly miscalculation. The registered clock buffer stabilizes signal integrity when populating multiple DIMMs per channel, which is critical for virtualization clusters running dozens of VMs; an uncorrected memory fault here can trigger host-level crashes and bring entire services down. Quad Rank x8 organization maximizes capacity in each slot, delivering the dense memory footprint essential for in-memory databases like Redis or SAP HANA, so real-time analytics workloads respond instantly without hitting the latency wall of disk swap. Finally, operating at 1.35V instead of the standard 1.5V slashes power draw and heat generation in dense rack deployments, directly lowering annual energy bills and cooling overhead. Every design choice translates into hardened uptime, consistent low latency, and scalable data-center efficiency.

Endurance & Reliability

General Virtualization
For dense virtual machine hosting, populate all memory channels symmetrically to maximize throughput and support numerous VMs. Using six or eight of these 16GB DDR3L-1333 Registered ECC modules per processor yields 96–128 GB, providing ample headroom for typical mixed workloads while the 1.35V low voltage reduces power draw across large server farms. Registered ECC ensures data integrity under sustained multi‑tenant pressure.

In-Memory Database
In‑memory databases demand both high capacity and strong error correction. Deploy these quad‑rank RDIMMs in a balanced configuration across all available channels—for example, install twelve modules (192 GB) in a dual‑socket system to avoid bottlenecks. The quad‑rank design allows dense packing per channel, and ECC is essential to prevent silent data corruption in transactional or analytical environments.

High-Performance Computing (HPC)
For HPC clusters, consistent per‑node memory bandwidth is critical. Install one 16GB RDIMM per channel (e.g., eight modules for an eight‑channel platform) to achieve peak speed without rank contention. The 1333 MHz speed, CL9 latency, and registered buffering provide stable multi‑socket operation, while 1.35V operation helps control cooling costs in scaled‑out compute racks.

Verified Compatibility

Rigorously tested and compatible with Dell PowerEdge R720, HP ProLiant DL380p Gen8, Lenovo ThinkServer RD630, and more.

FAQ