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| Product Type | Memory Module |
|---|---|
| Memory Capacity | 16 GB |
| Memory Technology | DDR3 |
| Product Voltage | 1.5 V |
| RAM Speed | 1600 MHz |
| RAM Standard | DDR3-1600/PC3-12800 |
| Error Identifying | ECC |
| Signal Type | Registered |
| Column Access Strobe (CAS) | CL11 |
| Rank | Dual Rank x4 |
| Quantity of Pins | 240-pin |
| RAM Genre | RDIMM |
This RDIMM is engineered for server platforms requiring high data integrity, with ECC and registered signal technology that stabilize operation under heavy memory loads typical of virtualization and in-memory database workloads. Its dual-rank x4 organization and CL11 latency optimize memory bandwidth and rank interleaving, delivering reliable throughput for enterprise-class applications.
1. Error-correcting code protection silently detects and corrects single-bit memory faults, preserving data integrity for financial transactions and database operations that cannot tolerate silent corruption.
2. Registered signal buffering stabilizes high-density memory arrays, allowing enterprises to populate all channels without signal degradation and maintain uptime in large-scale virtualization hosts.
3. Dual rank x4 organization keeps memory interleaving efficient under concurrent access patterns, delivering predictable latency for multi-tenant cloud workloads and real-time analytics.
4. A sixteen-gigabyte module capacity boosts overall server memory headroom, enabling denser virtual machine consolidation and larger in-memory caches for responsive SaaS platforms.
5. The 1600 megatransfers per second data rate provides ample throughput to keep modern server processors fed, preventing bandwidth starvation during peak load in memory-intensive databases.
When deploying dense virtualization clusters or running in-memory databases like SAP HANA, memory errors aren’t just a nuisance—they’re a direct threat to business continuity. The Samsung M393B2G70QH0-CK0 is a server-class Registered DDR3-1600 RDIMM engineered specifically for these mission-critical environments, and its four core attributes translate directly into operational resilience. First, ECC error correction actively detects and corrects single-bit flips caused by cosmic rays or electrical noise, preventing silent data corruption that could crash a hypervisor hosting dozens of virtual machines. Second, the registered signal buffer stabilizes command and address lines when you populate multiple DIMMs per channel—essential in a 512GB virtualization host where unbuffered memory would suffer signal degradation and sporadic failures. Third, its dual-rank x4 organization interleaves memory banks to boost sustained bandwidth and reduce latency under concurrent loads, which means your VMware vSphere cluster handles more VMs without I/O stalls and your Redis or Memcached instances serve queries faster. Finally, the 1600MT/s clock speed paired with CL11 latency hits the sweet spot between throughput and power efficiency in 1.5V server platforms, keeping thermal profiles in check across always-on database nodes. Each feature directly protects uptime and performance where downtime costs thousands per minute.
Server Memory Identified
This is a DDR3-1600 ECC Registered RDIMM (16GB, Dual Rank x4, CL11, 1.5V). It is exclusively suited for server-class platforms.
General Virtualization
For moderate consolidation of 10-15 light VMs, populate six modules across three channels per CPU (total 96GB) to balance capacity and memory bandwidth. Use identical 16GB RDIMMs in a balanced channel configuration to avoid NUMA penalties and ensure stable overcommit ratios.
In-Memory Database
Maximize capacity and interleave: install at least eight modules (128GB) in a 2DPC (two DIMMs per channel) arrangement to keep the entire dataset in RAM. Dual-rank x4 parts benefit from rank interleaving, improving transaction throughput; populate all memory channels evenly to sustain low latency under heavy read/write loads.
High-Performance Computing
Deploy a fully populated configuration—12 or more modules (192GB+) across all channels—to maximise bandwidth for memory-bandwidth-bound workloads. Uniform population with dual-rank DIMMs per channel delivers the highest GB/s per core, critical for large-scale simulations and parallel solvers where data reuse is limited.
Rigorously tested for servers; compatible with Dell PowerEdge R720, HPE DL380p Gen8, Lenovo RD630, and similar ECC RDIMM systems.
Q: Can I mix this M393B2G70QH0-CK0 with other memory modules of different brands or speeds?
A: Mixing different brands or speeds with this RDIMM is possible but not recommended. All modules will operate at the slowest common speed, potentially causing instability. For optimal reliability, use identical Samsung M393B2G70QH0-CK0 modules.
Q: Is this memory compatible with my server platform, such as Intel Xeon or AMD Opteron systems?
A: This DDR3-1600 ECC Registered RDIMM is compatible with servers utilizing Intel Xeon E5-2600 v1/v2 or AMD Opteron 6300 series processors. Verify your motherboard supports 1.5V, 240-pin DDR3 RDIMM with ECC.
Q: What is the recommended DIMM population order for optimal performance?
A: For optimal performance, populate identical RDIMMs in matched pairs per channel per server guidelines. Install the first module in the slot farthest from the CPU, balancing channels for interleaving.
Q: Does this module support overclocking or XMP profiles?
A: No, this server-grade RDIMM does not support overclocking or XMP profiles. It operates exclusively at JEDEC standard DDR3-1600 with CL11 timings to ensure enterprise-level stability and data integrity.
Q: What warranty and typical failure rate can I expect?
A: This module includes a 1-year warranty. As a Samsung enterprise RDIMM, it delivers a very low annualized failure rate typically under 0.2% in normal operation.