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| Product Type | Memory Module |
|---|---|
| Memory Capacity | 16 GB |
| Memory Technology | DDR4 |
| Product Voltage | 1.2V |
| RAM Speed | 2666MHz |
| RAM Standard | DDR4-2666/PC4-21300 |
| Error Identifying | ECC |
| Signal Type | Registered |
| Column Access Strobe (CAS) | CL19 |
| Rank | Dual Rank x8 |
| Quantity of Pins | 288-pin |
| RAM Genre | RDIMM |
This DDR4-2666 Registered ECC module with dual-rank x8 organization is purpose-built for enterprise servers and memory-intensive workloads like virtualization, in-memory databases, and mission-critical applications where data integrity is paramount. Its 288-pin RDIMM form factor leverages registered signal buffering and ECC to maintain stable signal integrity and provide automatic single-bit error correction, ensuring high reliability in fully populated, high-capacity server environments.
1. ECC protection actively corrects single-bit errors in real time, preserving transactional consistency across virtualized databases and preventing silent data corruption that could lead to costly application downtime.
2. Registered DIMM buffering stabilizes command and address signals under fully populated multi-channel configurations, enabling dense server racks to sustain memory-intensive operations without signal degradation.
3. A 16GB capacity per module strikes an optimal density for scaling virtual machine fleets, allowing more simultaneous tenants per node while keeping upgrade paths open for future memory expansion.
4. Dual Rank x8 organization interleaves accesses across internal banks, elevating sustained bandwidth for in-memory analytics and eliminating throughput bottlenecks when multiple cores request data concurrently.
5. DDR4-2666 speed delivers a 21.3GB/s peak transfer rate, directly accelerating query responses in large-scale caching layers and maintaining low latency under bursty cloud workloads.
The Samsung M393A2K43BB1-CTD6Y is a server-class RDIMM whose four core attributes—ECC error correction, registered buffering, dual-rank organization, and 1.2V efficiency—directly resolve the most pressing data-center challenges. In a virtualization cluster, ECC silently detects and corrects single-bit upsets provoked by cosmic radiation, shielding your hypervisor from silent data corruption that could destabilize dozens of VMs and trigger unplanned downtime. The registered buffer safeguards signal integrity when every 288-pin slot is populated, allowing you to scale up memory capacity confidently without sacrificing stability, a necessity for dense multi-tenant environments. Dual-rank x8 architecture employs rank interleaving to boost sustainable bandwidth during memory-intensive operations, meaning an in-memory database like SAP HANA delivers faster transaction processing and real-time analytics even under peak concurrency, while the CL19 latency keeps responses predictable. At the same time, the 1.2V operating voltage dramatically reduces thermal output across rack-scale deployments, cutting power and cooling costs while prolonging component lifespan. For your critical workloads, these characteristics translate seamlessly into uncompromised data fidelity, elastic scalability, responsive throughput, and operational savings.
This 16GB DDR4-2666 ECC Registered RDIMM (CL19, dual-rank) is built for server use. Capacity planning suggestions for common workloads follow.
General Virtualization
Equip each CPU with six or eight identical modules spread evenly across memory channels. Balanced population maximizes throughput and exploits ECC reliability for multi‑tenant environments. For a dual‑socket server, 12 of these 16GB DIMMs deliver 192GB, a solid foundation for moderate VM density.
In‑Memory Database
To support databases like SAP HANA, populate every DIMM slot with matching 16GB RDIMMs. This yields maximum capacity—often 384GB or higher in a dual‑socket system—while all channels contribute to aggregate bandwidth. Registered ECC protects data integrity under sustained, large‑scale memory operations.
High‑Performance Computing
For HPC, install one module per channel (1DPC) to retain the native 2666MHz speed; filling a second DIMM per channel often forces a speed drop. Symmetrically populate all channels with identical DIMMs. The dual‑rank x8 organization enhances rank interleaving, boosting effective bandwidth. An 8‑channel node using eight modules provides 128GB with peak memory performance.
Rigorously tested server memory, compatible with Dell PowerEdge R740/R760, HPE ProLiant DL380 Gen10, Lenovo ThinkSystem SR650, and more.
Q: Can I mix this M393A2K43BB1-CTD6Y with other memory modules of different brands or speeds?
A: Mixing brands or speeds on a registered server DIMM is not recommended. It may cause stability issues, force lower speeds, or disable ECC functionality, compromising data integrity in critical environments.
Q: Is this memory compatible with my server system (Intel or AMD platform)?
A: This 16GB DDR4-2666 ECC RDIMM is compatible with servers using Intel Xeon Scalable or AMD EPYC processors that support PC4-21300 registered memory. Always verify your system’s qualified vendor list.
Q: What is the recommended DIMM population order for optimal performance?
A: For dual-socket servers, populate identical DIMMs in matching slots across memory channels per the motherboard manual. Typically, fill the furthest white slots first to balance interleaving and maximize bandwidth.
Q: Does this module support overclocking or XMP profiles?
A: No. This is a server-grade registered DIMM built to strict JEDEC standards. It does not support overclocking or XMP; it operates at a fixed 2666MHz with CL19 for guaranteed reliability.
Q: What warranty and typical failure rate can I expect?
A: It includes a one-year warranty. Enterprise-class RDIMMs like this Samsung module undergo rigorous testing and demonstrate very low annualized failure rates (AFR), typically under 0.5% in normal operation.