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| Product Type | Memory Module |
|---|---|
| Memory Capacity | 16 GB |
| Memory Technology | DDR4 |
| Product Voltage | 1.2 V |
| RAM Speed | 2933 MHz |
| RAM Standard | DDR4-2933/PC4-23400 |
| Error Identifying | ECC |
| Signal Type | Registered |
| Column Access Strobe (CAS) | CL21 |
| Rank | Dual Rank |
| Quantity of Pins | 288-pin |
| RAM Genre | RDIMM |
This dual-rank registered ECC module is purpose-built for server platforms, delivering uncompromised data integrity and enhanced interleaving performance critical for virtualization clusters and in-memory databases. Its DDR4-2933 speed with CL21 latency at a low 1.2V, combined with the buffered registered architecture, ensures stable, energy-efficient operation under extreme 24/7 workloads.
1. ECC memory detects and corrects single-bit errors in real time, safeguarding transactional data integrity in mission-critical server environments where even silent corruption is unacceptable.
2. Registered signal buffering stabilizes command and address lines, enabling large-scale memory deployments across many DIMMs without compromising system reliability under sustained load.
3. Dual Rank organization interleaves memory accesses across two sets of chips per DIMM, raising effective bandwidth and reducing latency for virtualization hosts running dense container workloads.
4. A 16GB capacity per module strikes a balance between cost and VM density, letting IT operators allocate sufficient memory per virtual machine without wasting expensive capacity overhead.
5. 2933MT/s transfer rate supplies ample throughput for in-memory databases and real-time analytics, matching the sweet spot where performance meets power efficiency in modern data centers.
Based on the RDIMM form factor, registered signaling, and ECC error identification, the Samsung M393A2K43CB2-CVFCO is unequivocally a server-class memory module, purpose-built for enterprise infrastructure where data integrity and uptime are non-negotiable. Its four defining characteristics translate directly into mission-critical reliability. The ECC technology continuously detects and corrects single-bit memory errors, preventing silent data corruption that could crash a virtualized host or poison a financial transaction in an in-memory database. Registered buffering stabilizes the electrical load on the memory controller, allowing you to populate all 24 or more DIMM slots in a virtualization cluster without signal degradation—essential when consolidating dozens of VMs onto a single node. The dual rank architecture interleaves internal memory banks, delivering higher sustained bandwidth under heavy concurrent access, which directly accelerates real-time analytics and large SQL join operations. Running at DDR4-2933 at a low 1.2V, this module balances swift data throughput with thermal efficiency, keeping your data center cooling costs in check while guaranteeing stability for always-on workloads like virtualized ERP systems or Redis clusters where sub-millisecond latency matters.
Server Memory Capacity Planning: DDR4-2933 ECC RDIMM (16GB Dual Rank)
General Virtualization
For a typical dual-socket virtualization host, populate at least one DIMM per memory channel to balance capacity and bandwidth. With 6 or 8 channels per CPU, installing 8x or 12x of these 16 GB RDIMMs yields 128–192 GB, comfortably supporting 20–30 moderate VMs. Leave room for growth by choosing a 16 GB module size, which allows scaling to 256 GB+ without sacrificing all slots.
In-Memory Database
In-memory databases like Redis or SAP HANA demand both capacity and low latency. Fully populate all memory channels with these dual-rank DIMMs to maximize interleaving and throughput. A 12-DIMM configuration (192 GB) per server is a strong starting point for caching workloads, while data-heavy instances can scale to 24 DIMMs (384 GB). Ensure the use of identical registered ECC modules to maintain signal integrity and error resilience.
High-Performance Computing
HPC clusters benefit from the ECC protection and 2933 MT/s speed of these RDIMMs. Configure 8 or 16 DIMMs per node in a balanced layout across all memory channels, achieving 128–256 GB. The dual-rank design offers better bandwidth through rank interleaving. For memory-bandwidth-bound simulations, avoid running extreme 2 DIMMs per channel (2DPC) speeds if BIOS downgrades to 2666 MT/s; test throughput against your workload’s sensitivity.
Server memory rigorously tested for compatibility with Dell PowerEdge R750, HPE ProLiant DL380 Gen10, Lenovo ThinkSystem SR650, and more.
Q: Can I mix this M393A2K43CB2-CVFCO with other memory modules of different brands or speeds?
A: Mixing this RDIMM with different brands or speeds is not recommended. The platform will clock all modules to the lowest common speed, potentially degrading performance. For mission-critical servers, identical Samsung DIMMs ensure validated RAS and signal integrity.
Q: Is this memory compatible with my system?
A: This is a DDR4-2933 Registered ECC DIMM for server platforms. It is compatible with Intel Xeon Scalable (2nd Gen and newer) and AMD EPYC 7002/7003 series processors using C620 or SP3 chipsets. Verify your board supports 288-pin RDIMMs.
Q: What is the recommended DIMM population order for optimal performance?
A: For dual-socket servers, populate corresponding slots of each memory channel in pairs to maintain balanced interleaving. For this Dual Rank RDIMM, follow your system’s specific population guide, typically filling all channel 1 white slots first, then black slots.
Q: Does this module support overclocking or XMP profiles?
A: No. This is a JEDEC-compliant Registered DIMM with CL21 timing, designed for stability in enterprise environments. XMP and overclocking are not supported, as servers prioritize data integrity and field reliability over frequency tuning.
Q: What warranty and typical failure rate can I expect?
A: This Samsung module is covered by a one-year warranty from the seller. Manufactured to Tier-1 standards, its typical annualized failure rate (AFR) is below 0.3% in properly cooled enterprise systems, reflecting exceptional reliability for 24/7 operation.