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Samsung M324R2GA3DB0-CWMOD 16GB DDR5 UDIMM 5600MT/s | ECC Memory

MPN:M324R2GA3DB0-CWMOD By:Samsung Warranty:1 year
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General

Product TypeMemory Module
Memory Capacity16 GB
Memory TechnologyDDR5
Product Voltage1.1 V
RAM Speed5600 MHz
RAM StandardDDR5-5600/PC5-44800
Error IdentifyingECC
Signal TypeUnbuffered
Column Access Strobe (CAS)CL46
RankSingle Rank x8
Quantity of Pins288-pin
RAM GenreUDIMM

Engineer's Note

This UDIMM with ECC and a single-rank x8 configuration is engineered for entry-level servers and workstations that require error correction without the overhead of registered memory, making it well-suited for file servers, virtualization hosts, and mission-critical edge computing. Its DDR5-5600 speed at 1.1V with unbuffered signaling ensures lower latency and stable operation, while on-die ECC and side-band ECC work together to protect data integrity during high-availability workloads.

Technical Specs & Insights

1. ECC memory proactively detects and corrects single-bit errors, ensuring data integrity for critical server workloads and preventing silent data corruption in always-on operations.
2. DDR5 technology boosts internal bank groups and burst length, dramatically increasing memory-level parallelism for smooth multi-tenant virtualization and database responsiveness.
3. High-speed operation pushes peak bandwidth into the 44.8 GB/s range, accelerating in-memory analytics and real-time caching under heavy consolidation.
4. Ultra-low voltage operation trims power consumption and thermal output, directly reducing total cost of ownership in dense, continuously running deployments.
5. Unbuffered signal topology removes register latency, delivering the lower access times that latency-sensitive edge services and microservices rely on.

Why These Specs Matter

The M324R2GA3DB0-CWMOD is a DDR5 UDIMM with ECC, purpose-built for entry-level servers and workstations where data integrity meets platform affordability. Because it uses unbuffered signaling, the memory controller talks directly to the DRAM chips, eliminating the slight latency penalty of registered modules. That lower latency is tangible when hosting a virtualization cluster on a Xeon E-class platform: every microsecond saved in memory access translates into snappier responsiveness across a dozen active VMs, especially when the hypervisor juggles simultaneous memory requests. Meanwhile, the on-die ECC engine silently corrects single-bit errors before they corrupt your critical workloads. Picture an in-memory database like Redis powering real-time financial transactions—a rogue bit flip caused by background radiation could derail a trade, but ECC catches and fixes it on the fly, preserving transactional accuracy without downtime. The single-rank x8 organization at 5600MT/s also ensures a clean electrical load on the memory bus, enabling stable dual-DIMM-per-channel configurations. For a CAD designer rendering an overnight structural simulation or a data analyst running Apache Spark in-memory jobs, this module delivers the bandwidth to keep the CPU fed and the error detection to make sure the results are trustworthy, not suspect.

Endurance & Reliability

General Virtualization
For a virtualization host using this DDR5-5600 ECC UDIMM, populate at least four identical 16GB modules to achieve 64GB total capacity across a quad-channel architecture. Uniform configurations enable balanced memory interleaving, delivering the sustained bandwidth required by multiple concurrent VMs, while ECC prevents silent data corruption in multi-tenant environments.

In-Memory Database
Maximize capacity by filling all available DIMM slots – ideally eight modules for 128GB – allowing databases like Redis or SAP HANA to keep entire datasets in RAM. Single-rank x8 modules minimize electrical loading, helping maintain stable 5600MT/s operation at fully populated configurations, and ECC provides end-to-end integrity for transactional workloads where data loss is unacceptable.

High-Performance Computing
Install eight 16GB modules in a symmetric, one-module-per-channel layout to exploit the full aggregated bandwidth of the memory subsystem. This arrangement supplies the massive throughput needed for numerical simulation and parallel code execution, while the unbuffered ECC design delivers lower latency than registered alternatives, accelerating time-to-results in tightly-coupled HPC tasks without compromising reliability.

Verified Compatibility

Rigorously tested server memory, compatible with Dell PowerEdge T350, HPE ProLiant DL320 Gen11, and Lenovo ThinkSystem ST250 V3.

FAQ

Q: Can I mix this M324R2GA3DB0-CWMOD with other memory modules of different brands or speeds?

A: Mixing is not recommended. Different SPD timings and ECC algorithms may cause instability or uncorrected errors, compromising server reliability. Use identical modules for validated performance.

Q: Is this memory compatible with my system?

A: It needs a DDR5 ECC UDIMM platform, typically Intel Xeon E-2400 or AMD Ryzen 7000 series with a W680/X670E motherboard supporting unbuffered ECC. Verify your board’s QVL.

Q: What is the recommended DIMM population order for optimal performance?

A: Follow your server board manual. Usually populate one DIMM per channel starting with the farthest slot from the CPU, ensuring balanced channel loading for symmetrical ECC operations.

Q: Does this module support overclocking or XMP profiles?

A: No, it is a JEDEC-compliant DDR5-5600 ECC UDIMM without XMP. Overclocking is disabled to maintain signal integrity and error correction reliability on server platforms.

Q: What warranty and typical failure rate can I expect?

A: It includes a one-year warranty. As an enterprise-class module built with selected components, the AFR is typically well below 0.44%, ensuring high operational dependability.

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