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Samsung M425R2GA3BB0-CWM 16GB DDR5 SoDIMM 5600MT/s | Low-Power SODIMM

MPN:M425R2GA3BB0-CWM By:Samsung Warranty:1 year
US$583 - $632
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General

Product TypeMemory Module
Memory Capacity16 GB
Memory TechnologyDDR5
Product Voltage1.1 V
RAM Speed5600 MHz
RAM StandardDDR5-5600/PC5-44800
Error IdentifyingNon-ECC
Signal TypeUnbuffered
Column Access Strobe (CAS)CL46
RankSingle Rank x8
Quantity of Pins262-pin
RAM GenreSoDIMM

Engineer's Note

Designed as a DDR5-5600 SO-DIMM for modern laptops and compact mobile workstations, this 16 GB Non-ECC Unbuffered module delivers a balanced upgrade for memory-intensive multitasking and on-the-go productivity. Its low 1.1 V operating voltage and Single Rank x8 organization ensure enhanced power efficiency and superior signal integrity, enabling reliable plug-and-play compatibility with Intel and AMD mobile platforms.

Technical Specs & Insights

1. DDR5 technology delivers higher bandwidth per watt than previous generations, allowing ultrabooks to handle AI-assisted tasks and 4K streaming without draining the battery prematurely.
2. 1.1V operating voltage minimizes power draw and heat generation, helping fanless laptops sustain peak performance during extended productivity sessions.
3. 5600MT/s transfer rate ensures swift application launches and smooth multitasking, transforming waiting time into active work for mobile professionals.
4. 16GB capacity serves as an effortless plug-and-play upgrade, giving mainstream laptops enough headroom to keep dozens of browser tabs and collaboration tools responsive simultaneously.
5. Single Rank x8 organization reduces electrical loading on the memory controller, improving compatibility across diverse notebook platforms while further conserving battery for on-the-move reliability.

Why These Specs Matter

The Samsung M425R2GA3BB0-CWM is a notebook memory module—specifically a DDR5 SoDIMM—and its four defining characteristics translate directly into a superior mobile computing experience where efficiency, compatibility, and genuine performance matter most.

Its 1.1V native voltage is a cornerstone for battery longevity. In a thin-and-light laptop used throughout a workday of constant video calls and document editing, this lower base power draw directly extends unplugged runtime and reduces thermal buildup. Pair that with the 16GB capacity on a single-rank x8 design, and you get an upgrade that sidesteps the compatibility headaches many compact notebooks face with dual-rank kits—boot reliability is immediate, and the memory controller stays cooler. The 5600MT/s speed and DDR5 architecture then step in during heavier lifting. For a mobile workstation rendering a 4K timeline or a data analyst running large pivot tables while multitasking, the bandwidth headroom prevents sluggish switching and stuttering previews. Together, these traits turn a simple memory swap into a tangible shift where the system feels snappier, runs quieter, and lasts longer away from the wall, all without the guesswork of module compatibility in tight chassis.

Endurance & Reliability

Memory Type Identification: This is a DDR5-5600 Non-ECC Unbuffered SoDIMM, designed for laptops and compact systems. The low 1.1V operating voltage and single-rank x8 configuration make it ideal for both performance upgrades and power-efficient builds.

Laptop Upgrade
For users seeking a responsive daily driver, populating both SoDIMM slots in dual-channel mode is critical. A matched pair of these 16GB modules (32GB total) lifts integrated graphics performance and system snappiness far more than a single 32GB stick. If the existing slot holds an 8GB module, swapping it for this 16GB unit delivers a cost-effective 24GB capacity bump, though full dual-channel symmetry is lost beyond 16GB of usage.

Mobile Workstation
Demanding professional workloads such as 4K video editing, 3D rendering, and large-scale code compilation require maximum capacity. Install two of these 16GB SoDIMMs to reach 32GB, or if the platform supports 48GB-per-slot densities, consider pairing a 16GB module with a higher-capacity stick for 48–64GB totals. Always prioritize identical rank and speed across both slots to maintain signal integrity under sustained load, reducing the risk of thermal throttling.

Ultrabook Power Saving
This 1.1V DDR5 module draws significantly less power than 1.2V alternatives, extending battery runtime in thin-and-light designs. Its self-refresh and power-down granularity, inherent to DDR5, further reduce idle consumption. For ultralight laptops with soldered memory and a single upgradable slot, adding this low-voltage 16GB SoDIMM boosts multitasking headroom while preserving the system’s all-day portability and cool, fanless operation.

Verified Compatibility

Rigorously tested, compatible with laptops like Dell XPS 15 9530, Lenovo ThinkPad X1 Carbon Gen 11, HP EliteBook 840 G10.

FAQ

Q: Can I mix this M425R2GA3BB0-CWM with other memory modules of different brands or speeds?

A: Mixing is not advised. Different brands or speeds may force the module to downclock to the slowest common speed and can cause instability. For optimal reliability, install identical modules.

Q: Is this memory compatible with my system?

A: It is compatible with notebooks supporting DDR5 SoDIMM, such as Intel 12th/13th Gen or AMD Ryzen 6000/7000 series platforms. Always verify your laptop model’s memory specifications before purchase.

Q: What is the recommended DIMM population order for optimal performance?

A: For dual-channel capable laptops, populate both SoDIMM slots with identical modules to maximize bandwidth. Using a single module is acceptable but operates in single-channel mode.

Q: Does this module support overclocking or XMP profiles?

A: No, this Unbuffered Non-ECC DDR5 module follows JEDEC standards and runs at its native speed of DDR5-5600. XMP profiles and manual overclocking are not supported on standard notebook platforms.

Q: What warranty and typical failure rate can I expect?

A: This module is backed by a 1-year warranty. It is built using high-quality components and extensive testing, resulting in a very low annualized failure rate under normal operating conditions.

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