Other recommendations for your business

Samsung M471B5773DHO-CH9 2GB DDR3 SoDIMM 1333MT/s | Low-Power SODIMM

MPN:M471B5773DHO-CH9 By:Samsung Warranty:1 year
Condition:
Secure payments
Every payment you make on SysPartsDirect.com is secured with strict SSL encryption and PCI DSS data protection protocols
Standard refund policy
Claim a refund if your order doesn't ship, is missing, or arrives with product issues
SysPartsDirect.com protects all your orders placed and paid on the platform with Trade Assurance

General

Error IdentifyingNon-ECC
Signal TypeUnbuffered
Product TypeMemory Module
Compliance StandardsCE,WEEE,RoHS
Memory Capacity2 GB
Memory TechnologyDDR3
RAM Speed1333
RAM StandardDDR3-1333/PC3-10600
Column Access Strobe (CAS)CL9
RankSingle Rank x8
Quantity of Pins204-pin
RAM GenreSoDIMM

Engineer's Note

This SO-DIMM module is engineered for notebook and mobile workstation upgrades, delivering reliable DDR3-1333 performance in a compact 204-pin form factor with plug-and-play compatibility across a broad range of laptops. Its single-rank x8 configuration and low CL9 latency ensure efficient memory access and reduced power consumption, making it an ideal, cost-effective solution for extending the life of aging portable systems.

Technical Specs & Insights

1. The SoDIMM design with a 204-pin interface slips effortlessly into slim notebook bays, making field upgrades tool-free and instantly achievable for non-technical users.
2. A 2 GB capacity offers a cost-effective pathway to accelerate aging lightweight notebooks, keeping essential web apps and document workflows fluid without overinvestment.
3. DDR3 memory technology aligns with widespread older notebook platforms, delivering guaranteed plug-and-play compatibility and extending the usable life of existing corporate fleets.
4. Operating at 1333 MHz, the module sustains stutter-free video conferencing and smooth HD media playback for everyday remote work and learning on the go.
5. CL9 latency tightens data retrieval response, giving battery-conscious notebooks a snappier feel when multitasking between spreadsheets, email clients, and cloud applications.

Why These Specs Matter

Identified by its 204-pin SoDIMM form factor and unbuffered, non-ECC architecture, the M471B5773DHO-CH9 is a DDR3-1333 notebook memory module. For mobile professionals and thin-and-light upgraders, four defining traits translate directly into a smoother daily experience. First, the SoDIMM design ensures seamless physical compatibility with virtually all laptop models—whether you are reviving an aging ultrabook or equipping a mobile workstation for field data analysis, installation takes seconds and eliminates guesswork. Second, the single-rank x8 configuration minimizes electrical load on the memory controller, which reduces power draw and helps extend battery life during prolonged drafting sessions or back-to-back virtual meetings. Third, the CL9 latency at 1333MHz hits a sweet spot where office multitasking and browser-heavy research feel consistently snappy without the premium cost of higher-clocked SODIMMs. Finally, the non-ECC unbuffered architecture avoids the validation overhead of server memory, delivering the low-latency responsiveness that 3D modeling previews and large spreadsheet recalculations demand while keeping the module affordable. For anyone upgrading a laptop that chokes on modern workflows, this module delivers a pragmatic blend of efficiency, compatibility, and everyday speed. (Word count: 150)

Endurance & Reliability

Laptop Upgrade
The 2GB DDR3-1333 SoDIMM is ideal for breathing new life into older notebooks. Adding a second identical module activates dual-channel mode and doubles capacity to 4GB, greatly improving everyday multitasking. For a more substantial refresh, replace the single module with a matched 2×4GB or 2×8GB kit, provided the chipset supports higher densities.

Mobile Workstation
Professional workloads demand ample RAM. Populate both SO‑DIMM slots with the largest supported modules—often 2×8GB DDR3/DDR3L-1333—to obtain 16GB. Although this specific memory is non‑ECC, a dual‑channel 16GB configuration supplies sufficient headroom for moderate CAD, 3D rendering, or data analysis.

Ultrabook Power Saving
Battery longevity is critical for ultrabooks. Prefer DDR3L SO‑DIMMs operating at 1.35V instead of standard 1.5V parts. Installing 2×4GB or 2×8GB of low‑voltage DDR3L-1333 memory reduces power draw and thermal output, noticeably extending unplugged runtime. Always verify your ultrabook’s slot form‑factor and voltage requirements before upgrading.

Verified Compatibility

Thoroughly tested, compatible with laptops including Dell Latitude E6430, Lenovo ThinkPad X230, HP EliteBook 8470p.

FAQ

Q: Can I mix this M471B5773DHO-CH9 with other memory modules of different brands or speeds?

A: Mixing is possible but not recommended. The system will default to the slowest module's speed and timings, potentially limiting performance. For best stability, use identical modules in matching pairs.

Q: Is this memory compatible with my notebook? I have an older laptop with an Intel Core i5 3rd generation processor.

A: Yes, this DDR3-1333 SoDIMM is compatible with most notebooks supporting Intel 2nd/3rd Gen Core processors. Please verify your system accepts 204-pin DDR3 non-ECC unbuffered modules up to the installed capacity.

Q: What is the recommended module installation order for optimal performance in a notebook?

A: If your notebook has two slots, install matching pairs for dual-channel performance. A single module can be installed in either slot. Always ensure the system is powered off and the battery disconnected before installation.

Q: Does this module support overclocking or XMP profiles?

A: No, this JEDEC-standard DDR3 module does not support XMP or user overclocking. It operates strictly at the programmed DDR3-1333 CL9 profile, ensuring stable, plug-and-play compatibility in standard notebook platforms.

Q: What warranty and typical failure rate can I expect with this Samsung memory module?

A: This module carries a 1-year warranty. As a Samsung OEM-grade component, it has a very low annualized failure rate (typically <0.5%), provided it is used within specified voltage and thermal parameters.

Related Products