| Product Type | Memory Module |
|---|---|
| Memory Capacity | 48 GB |
| Memory Technology | DDR5 |
| Product Voltage | 1.1 V |
| RAM Speed | 5600 MHz |
| RAM Standard | DDR5-5600/PC5-44800 |
| Error Identifying | ECC |
| Signal Type | Registered |
| Column Access Strobe (CAS) | CL40 |
| Rank | Dual Rank |
| Quantity of Pins | 288-pin |
| RAM Genre | RDIMM |
This 48GB DDR5-5600 RDIMM with ECC and registered signal technology is purpose-built for enterprise servers and workstations, delivering the data integrity and signal stability essential for memory-intensive virtualization, in-memory databases, and mission-critical workloads. Its dual-rank configuration optimizes memory interleaving to boost bandwidth efficiency, while the registered architecture enables higher-capacity configurations on a single channel without compromising reliability.
1. Generous module density enables higher virtual machine consolidation per server, directly lowering data center footprint and licensing costs.
2. Next-generation transfer rate doubles the peak bandwidth of previous architectures, accelerating in-memory databases and HPC calculations.
3. On-die ECC and end-to-end error correction maintain data integrity in round-the-clock operations, preventing silent data corruption in financial and healthcare transactions.
4. The registered buffer decouples electrical loads, allowing fully populated memory channels to operate without signal degradation under heavy memory access.
5. Dual-rank interleaving keeps the memory pipeline saturated, maximizing throughput when multiple virtual machines compete for shared cache and memory resources.
The Samsung M425R6GA3PB0-CWM is a DDR5-5600 Registered Dual In-Line Memory Module (RDIMM) built exclusively for server environments. Its four defining characteristics—DDR5 bandwidth, ECC error correction, Registered signal buffering, and Dual Rank architecture—directly address the critical demands of modern data centers.
Imagine a dense virtualization cluster hosting dozens of virtual machines. Without Registered buffering, high-capacity memory configurations would suffer signal degradation and instability, risking hypervisor crashes. Registered logic stabilizes the command and address buses, allowing you to confidently deploy 48 GB per module across multiple channels for massive scaling. In this noisy, 24/7 environment, ECC continuously corrects single-bit errors caused by background radiation or electrical noise, preventing silent data corruption that could crash a VM or corrupt a critical log unnoticed.
Now consider an in-memory database such as Redis or SAP HANA where microsecond latency matters. The Dual Rank organization interleaves access across two sets of memory chips, significantly increasing row-hit rates and sustaining bandwidth under heavy random workloads. Combined with the raw 5600 MT/s data rate, it feeds the CPU with a stream of real-time results, accelerating complex queries and throughput. The 1.1 V operating voltage further reduces thermal load in dense racks, lowering cooling costs without sacrificing performance. Together, these technologies ensure your transactional integrity, maximize uptime, and deliver the predictable low-latency response your applications require. This memory is not just a component; it is a foundation for reliable, high-performance server infrastructure.
This is a server-class 48GB DDR5-5600 Registered DIMM (RDIMM) with ECC, ideal for capacity-hungry data-center roles. The following scenarios outline how to deploy these modules effectively.
General Virtualization
For mixed-VM workloads, populate one 48GB DIMM per memory channel to balance capacity and speed. A dual-socket server with eight channels per CPU achieves 768GB using 16 modules, maintaining the full 5600MT/s frequency and leaving room for future expansion without performance penalty.
In-Memory Database
Low-latency stores like Redis or SAP HANA require maximal capacity at top speed. Install a single 48GB DIMM in every available channel—on a 12-channel-per-socket platform, 24 sticks deliver 1,152GB of ECC-protected memory. Staying at one DIMM per channel avoids signal downgrades, preserving the DIMM’s rated CL40 timing and bandwidth.
High-Performance Computing
Bandwidth-driven simulations benefit from populating all channels with one 48GB DIMM. A dual-socket node with 12 modules per CPU provides 576GB, enough for large CFD or molecular dynamics models while sustaining the peak 5600MT/s data rate. This configuration leaves room to add a second DIMM per channel later if capacity needs grow.
Rigorously tested for servers; compatible with Dell PowerEdge R760, HPE ProLiant DL380 Gen11, Lenovo ThinkSystem SR650 V3, and more.
Q: Can I mix this M425R6GA3PB0-CWM with other memory modules of different brands or speeds?
A: Not recommended. Mixing brands or speeds in a registered server environment can compromise signal integrity and stability. For guaranteed reliability, populate exclusively with identical Samsung DDR5 RDIMMs.
Q: Is this memory compatible with my server platform (Intel or AMD)?
A: This DDR5-5600 48GB RDIMM is designed for Intel Xeon Scalable 4th/5th Gen and AMD EPYC 9004/9005 series. Please verify your server motherboard's QVL to confirm specific model support.
Q: What is the recommended DIMM population order for optimal performance?
A: Follow your server manual’s balanced memory configuration. Typically, populate identical modules in groups of 8 or 16 per CPU, filling channels symmetrically and matching slots of the same color first.
Q: Does this module support overclocking or XMP profiles?
A: No. This server-grade RDIMM adheres strictly to JEDEC DDR5-5600 CL40 standards to ensure data integrity and platform stability. It does not support overclocking or XMP 3.0 profiles.
Q: What warranty and typical failure rate can I expect?
A: This module includes a 1-year warranty. Samsung enterprise RDIMMs typically demonstrate an Annualized Failure Rate (AFR) below 0.5% under normal operating conditions in validated platforms.