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Samsung M393B5273CH0-CH9 4GB DDR3 RDIMM 1333MHz | Reliable ECC RDIMM

MPN:M393B5273CH0-CH9 By:Samsung Warranty:1 year
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General

ModelM393B5273CH0-CH9
Compliance StandardsEU RoHS,FCC
Product TypeMemory Module
Memory Capacity4 GB
Memory TechnologyDDR3
Product Voltage1.5V
RAM Speed1333MHz
RAM StandardDDR3-1333/PC3-10600
Error IdentifyingECC
Signal TypeRegistered
Column Access Strobe (CAS)CL9
RankDual Rank x8
Quantity of Pins240-pin
RAM GenreRDIMM

Engineer's Note

Designed for legacy server platforms, this Samsung M393B5273CH0-CH9 4GB DDR3-1333 RDIMM employs registered signal buffering and ECC to ensure uncompromised data integrity in virtualized environments and memory-intensive database applications. Its dual-rank x8 organization and CL9 latency strike a balance between capacity density and predictable access times, making it a reliable choice for sustaining uptime in aging enterprise infrastructure.

Technical Specs & Insights

1. ECC detects and corrects single-bit errors, preventing silent data corruption in always-on financial or database workloads.
2. Registered buffer reduces electrical load on the memory controller, allowing reliable population of all DIMM slots in dense virtualization hosts.
3. 4 GB capacity fits dedicated lightweight appliance roles or entry-level virtualization nodes where stable operation matters more than massive density.
4. 1333 MHz clock delivers consistent bandwidth for legacy enterprise applications, avoiding needless power and cooling overhead.
5. Dual Rank x8 organization increases bank-level parallelism, improving memory subsystem throughput under simultaneous VM access bursts.

Why These Specs Matter

Designed specifically for server and enterprise environments, the M393B5273CH0-CH9 is a registered DDR3 memory module engineered to address the critical demands of data centers. Its four key attributes directly resolve real-world operational pain points. ECC error correction aggressively mitigates single-bit soft errors caused by cosmic radiation or electrical noise, preventing silent data corruption in high-stakes financial transaction databases where even one flipped bit can compromise trade integrity. The registered buffer architecture decouples the memory controller from the DRAM loading, enabling stable population of all 24 DIMM slots in a typical 2U server without signal degradation; this ensures that dense virtualization clusters running VMware ESXi or Microsoft Hyper-V can host dozens of memory-hungry VMs without crashing under heavy address traffic. Moreover, the dual-rank design interleaves internal banks to elevate sustained bandwidth, crucial for in-memory databases like Redis or SAP HANA that demand ultra-low-latency access to massive key-value stores. Combined with a reliable DDR3-1333 speed and CL9 latency, this module delivers predictable throughput that prevents query timeouts during peak OLTP workloads, ultimately safeguarding uptime and service-level agreements.

Endurance & Reliability

General Virtualization
For general virtualization hosts using this 4 GB DDR3-1333 RDIMM, populate at least six to eight modules (24–32 GB) across all memory channels to avoid bottlenecks under mixed VM workloads. Balance DIMMs evenly per CPU socket and per channel—typically one dual-rank module per channel maintains full 1333 MHz speed while leaving room for future expansion. If your hypervisor benefits from memory mirroring or sparing, plan for an additional identical kit to preserve redundancy without sacrificing usable capacity.

In-Memory Database
In-memory databases demand large, reliable capacity. With 4 GB RDIMMs, maximize total RAM by filling all available DIMM slots—24 modules in a dual-socket server yield 96 GB, suitable for moderate Redis or SAP HANA test environments. Use identical part numbers across all channels to guarantee ECC correctness and consistent latency. For production, consider populating in multiples of three or four per socket to align with your platform’s interleaving rules and sustain low-latency access.

High-Performance Computing
HPC clusters benefit from balanced memory bandwidth. Install one dual-rank RDIMM per channel (e.g., eight modules per dual-socket node for eight-channel systems) to achieve peak 1333 MT/s throughput without rank-switching penalties. A minimum of 32 GB per node (eight DIMMs) keeps vectorized workloads fed, while registered ECC ensures node uptime during multi-day simulation runs. Scale uniformly across all compute nodes to maintain consistent MPI performance and avoid memory-page imbalances.

Verified Compatibility

Rigorously tested, this DDR3 ECC RDIMM is compatible with Dell PowerEdge R720, HP DL380p Gen8, Supermicro X9 systems.

FAQ

Q: Can I mix this M393B5273CH0-CH9 with other memory modules of different brands or speeds?

A: Mixing is strongly discouraged for RDIMMs. Mismatched brands, speeds, or ranks often cause signal integrity issues and system instability. Always populate servers with identical, validated modules to ensure reliable 24/7 operation.

Q: Is this memory compatible with my Intel Xeon E5 or AMD Opteron server platform?

A: Compatibility depends on the specific CPU and motherboard. This DDR3-1333 Registered ECC DIMM supports Intel 5500/5600 series and AMD C32/G34 platforms. Verify the Qualified Vendor List (QVL) of your server board.

Q: What is the recommended DIMM population order for optimal performance?

A: Follow your server motherboard manual strictly. Typically, populate identical DIMMs per memory channel, starting with the farthest slot from the CPU. This balances interleaving and maintains dual-rank x8 performance with minimal latency.

Q: Does this module support overclocking or XMP profiles?

A: No. This is a standard enterprise RDIMM designed for JEDEC DDR3-1333 CL9. Overclocking and XMP are unavailable and unsafe for Registered ECC memory, as both risk data corruption and system crashes in server environments.

Q: What warranty and typical failure rate can I expect?

A: It includes a one-year warranty. Typical Annualized Failure Rate (AFR) for this Samsung RDIMM is below 0.5% under rated conditions, offering server-grade reliability far superior to unbuffered memory.

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