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Samsung M393B5273QB0-YK0 4GB DDR3 RDIMM 1600MHz | Server ECC Memory

MPN:M393B5273QB0-YK0 By:Samsung Warranty:1 year
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General

ModelM393B5273QB0-YK0
Product TypeMemory Module
Compliance StandardsEU RoHS,FCC
Memory Capacity4 GB
Memory TechnologyDDR3
Product Voltage1.35V
RAM Speed1600MHz
RAM StandardDDR3-1600/PC3-12800
Error IdentifyingECC
Signal TypeRegistered
Column Access Strobe (CAS)CL11
RankDual Rank x8
Quantity of Pins240-pin
RAM GenreRDIMM

Engineer's Note

As a DDR3 Registered ECC module (RDIMM), the M393B5273QB0-YK0 is purpose-built for server platforms handling memory-intensive workloads such as virtualization and in-memory databases. Its dual-rank x8 organization combined with ECC and registered signal buffering ensures robust data integrity and stable operation under high-density configurations, making it ideal for scaling up reliable enterprise memory capacity.

Technical Specs & Insights

1. ECC detects and corrects single-bit errors in real time, safeguarding financial transactions and virtualization integrity against silent data corruption.
2. Registered buffering stabilizes signal integrity across populated memory channels, enabling confident scaling of RAM capacity in always-on enterprise servers.
3. Dual Rank x8 organization leverages rank interleaving to sustain throughput when multiple virtual machines compete for memory, reducing stall cycles under consolidation pressure.
4. 1.35V low-voltage operation trims overall server power draw and waste heat, directly shrinking cooling overhead in dense rack deployments.
5. 1600MHz frequency provides a steady 12.8 GB/s per channel, maintaining responsive database queries and mid-range SaaS application performance without bottlenecking modern multi-core server CPUs.

Why These Specs Matter

In your data center, every bit of information is a transaction, a customer record, or a virtual machine state that simply cannot be corrupted. The Samsung M393B5273QB0-YK0 is a server-grade DDR3 Registered DIMM engineered precisely for this reality, and its four defining characteristics translate directly into infrastructure resilience where it matters most. The integrated ECC engine continuously detects and corrects single-bit memory errors—spontaneous flips caused by background radiation or electrical noise—preventing silent data corruption that could crash a critical in‑memory database like Redis or SAP HANA during peak trading hours. Because this is a Registered RDIMM, the onboard register buffers the command and address signals, which allows a virtualization host to support three or four times the number of DIMMs per channel without signal degradation; this means you can confidently populate all 24 slots in a dual‑socket server to run dozens of additional virtual desktops or containerized microservices. The module’s dual‑rank, x8 organization improves bank‑level parallelism, giving the memory controller more open pages to work with so that multiple concurrent VMs or complex OLAP queries see measurably higher sustained bandwidth rather than stalling on row conflicts. Finally, running at 1.35V instead of the standard 1.5V lowers the thermal load inside dense rack enclosures, directly reducing cooling energy costs and extending the lifespan of your motherboard voltage regulators—a tangible operating‑expense advantage when you are managing an entire fleet of servers. Together, these features turn a simple memory upgrade into a safeguard for data integrity, virtual machine density, and long‑term operational efficiency.

Endurance & Reliability

General Virtualization
Populate all memory channels with pairs of these 4GB RDIMMs to enable memory mirroring or sparing. A dual-socket server with 12 DIMM slots per CPU can hold 24 modules, delivering 96 GB for moderate VM density. Their 1.35V low voltage helps lower power and cooling costs in virtualized clusters.

In-Memory Database
Maximize capacity by filling every available slot with these ECC RDIMMs. A full 24-module configuration yields 96 GB of registered memory, essential for protecting entire datasets. Distribute modules evenly across channels to ensure consistent low-latency access for demanding in-memory analytics.

High-Performance Computing
For HPC, place one module per memory channel to maintain the full 1600 MHz clock. In a dual-socket system with four channels per CPU, eight modules provide 32 GB of high-bandwidth memory suitable for simulations. If more capacity is needed, fully populate channels in matched pairs, but expect potential frequency reduction under load.

Verified Compatibility

Rigorously tested ECC Registered server memory. Compatible with Dell PowerEdge R720, HPE ProLiant DL380p Gen8, Lenovo System x3650 M4.

FAQ

Q: Can I mix this M393B5273QB0-YK0 with other memory modules of different brands or speeds?

A: Mixing is not recommended for server environments. Even identical specs from different brands may cause instability. For reliable operation, use identical Samsung RDIMMs in matched sets to ensure signal integrity and minimize ECC errors.

Q: Is this memory compatible with my Intel Xeon E5 or AMD Opteron server platform?

A: This DDR3-1600 Registered ECC module is widely compatible with Intel Xeon E5-2600 v2/v1 and AMD Opteron 6300/4300 series using C600/C602 or SR5690 chipsets. Please verify your board's QVL for 1.35V RDIMM support.

Q: What is the recommended DIMM population order for optimal performance with this RDIMM?

A: Populate identical DIMMs per channel, starting with the farthest slot from the CPU. For dual-rank RDIMMs like this, follow the server manual: typically fill blue slots first, then black, balancing channels for maximum memory bandwidth.

Q: Does this M393B5273QB0-YK0 module support overclocking or XMP profiles?

A: No. This is a JEDEC-compliant server RDIMM running at fixed 1600MHz CL11. It does not support XMP or overclocking. Performance is governed by the platform's memory controller for guaranteed ECC reliability and 24/7 stability.

Q: What warranty and typical failure rate can I expect on this Samsung server memory?

A: This module includes a 1-year warranty. Samsung RDIMMs exhibit an annualized failure rate (AFR) below 0.5% under normal server conditions, reflecting rigorous testing and high-quality 30nm-class DRAM manufacturing.

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