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Samsung M392B5270DH0-CK0 4GB DDR3 VLP RDIMM 1600MT/s |Registered ECC

MPN:M392B5270DH0-CK0 By:Samsung Warranty:1 year
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General

ModelM392B5270DH0-CK0
Product TypeMemory Module
Compliance StandardsEU RoHS,FCC
Memory Capacity4 GB
Memory TechnologyDDR3
Product Voltage1.5V
RAM Speed1600MHz
RAM StandardDDR3-1600/PC3-12800
Error IdentifyingECC
Signal TypeRegistered
Column Access Strobe (CAS)CL11
RankSingle Rank x4
Quantity of Pins240-pin
RAM GenreVLP RDIMM

Engineer's Note

Designed as a VLP RDIMM with ECC and registered signalling, this DDR3-1600 module is a server-grade component optimized for dense virtualization clusters and in-memory databases where data integrity and high signal stability are critical. Its single-rank x4 configuration and very low-profile form factor ensure reliable operation and improved airflow in 1U rack servers, while delivering the low latency and power efficiency required for sustained 24/7 workloads.

Technical Specs & Insights

1. ECC protection actively detects and corrects single-bit data corruption, preserving transactional accuracy in financial databases and virtualization hosts.
2. Registered buffering re-drives address and command signals across heavily loaded multi-DIMM channels, enabling reliable server scaling to terabyte-level memory footprints.
3. VLP RDIMM form factor reduces module height to fit ultra-slim 1U rack and blade servers, preventing airflow blockage that could lead to thermal throttling in dense clusters.
4. Single Rank x4 organization uses x4 DRAM devices to maximize per-rank error containment while delivering predictable latency for latency-sensitive scale-out workloads.
5. 1600MHz data rate provides a balanced 12.8 GB/s bandwidth per DIMM, maintaining smooth data feeds for hypervisors juggling moderate numbers of guest VMs.

Why These Specs Matter

The Samsung M392B5270DH0-CK0 is a server-class DDR3 VLP RDIMM engineered to solve real-world data center challenges. Its ECC technology actively detects and corrects single-bit errors, which is a mission-critical safeguard when you run in-memory databases like Redis or virtualized SQL clusters—without it, silent data corruption could ripple into financial discrepancies or application outages. The registered buffer design re-drives address and command signals, letting you populate all memory channels stably at high capacities. For a virtualization host consolidating dozens of VMs, this means you can confidently scale to 512 GB and beyond without random boot failures or memory training errors under heavy load. The Very Low Profile form factor, at just 18.75 mm tall, liberates airflow in dense 1U and blade servers, directly preventing thermal throttling during sustained OLAP or large-scale caching workloads. Finally, the single-rank x4 organization at DDR3-1600 with CL11 timing provides a balanced mix of bandwidth and command-rate efficiency, reducing memory-access latency in high-concurrency virtualization I/O and real-time analytics. This module translates technical specifications into cleaner uptime, denser packaging, and predictable performance when your business depends on it.

Endurance & Reliability

General Virtualization
For dense VM hosting, this 4GB DDR3-1600 VLP RDIMM allows high module counts in 1U/2U chassis. Deploy 12–24 identical modules (48–96GB) across all memory channels to maximize consolidation ratios while ECC guards against soft errors in multi-tenant environments.

In-Memory Database
Single-rank x4 4GB modules at 1600MHz suit mid-scale in-memory workloads. Populate three DIMMs per channel (e.g., 18 units for 72GB) in a dual-socket server to balance capacity and latency. Stick to homogeneous ranks per channel to avoid performance penalties; consider moving to higher-density LRDIMMs if datasets exceed 384GB.

High-Performance Computing (HPC)
The registered ECC design makes this module ideal for simulation clusters where data integrity is critical. Configure balanced channel populations (8–16 DIMMs per node) for 32–64GB per CPU. The 11-11-11 latency and 1600MT/s speed provide predictable bandwidth; pair with identical modules to prevent clock-down, and leverage the VLP form factor for improved airflow in dense HPC racks.

Verified Compatibility

Rigorously tested for compatibility with Dell PowerEdge R720, HP DL380p Gen8, and more server platforms.

FAQ

Q: Can I mix this M392B5270DH0-CK0 with other memory modules of different brands or speeds?

A: Mixing registered ECC modules of different brands or speeds is not recommended. It can cause timing conflicts and system instability. For guaranteed reliability, use identical modules with the same Samsung part number and specifications.

Q: Is this memory compatible with my Intel Xeon E5 or AMD Opteron server platform?

A: This DDR3-1600 registered ECC VLP RDIMM is compatible with servers using Intel Xeon E5-2600 v1/v2 or AMD Opteron 6300 series platforms. Verify your motherboard supports 4GB single-rank x4 240-pin modules at 1.5V.

Q: What is the recommended DIMM population order for optimal performance?

A: Follow your server motherboard's manual. Typically, populate identical modules per channel, starting with the primary slots (e.g., A1, B1) to enable balanced memory interleaving. This single-rank x4 VLP RDIMM benefits from symmetrical channel loading.

Q: Does this module support overclocking or XMP profiles?

A: No. This Samsung DDR3 registered ECC memory adheres to JEDEC standards only. It does not support XMP profiles or overclocking; its firmware is optimized for maximum stability and data integrity in enterprise server environments.

Q: What warranty and typical failure rate can I expect?

A: This module includes a one-year warranty. Typical annualized failure rate (AFR) for Samsung enterprise memory is approximately 0.5%, reflecting rigorous testing and high-grade components for 24/7 server operation.

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