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| Model | M393B5273DH0-CK0 |
|---|---|
| Compliance Standards | EU RoHS,FCC |
| Product Type | Memory Module |
| Memory Capacity | 4 GB |
| Memory Technology | DDR3 |
| Product Voltage | 1.5V |
| RAM Speed | 1600MHz |
| RAM Standard | DDR3-1600/PC3-12800 |
| Error Identifying | ECC |
| Signal Type | Registered |
| Column Access Strobe (CAS) | CL11 |
| Rank | Dual Rank x8 |
| Quantity of Pins | 240-pin |
| RAM Genre | RDIMM |
This DDR3-1600 Registered ECC module (M393B5273DH0-CK0) is engineered for server platforms where data integrity and system uptime are paramount, making it ideal for virtualization hosts, in-memory databases, and mission-critical workloads that demand error correction and signal stability. Its dual-rank x8 organization maximizes bank-level parallelism, while the CL11 latency and 1.5V operating voltage contribute to predictable thermal and power profiles in dense rack deployments.
1. ECC memory detects and corrects single-bit errors in real time, preventing silent data corruption in financial transactions or database operations where uptime and accuracy are non-negotiable.
2. Registered signal type buffers command and address signals, enabling large-scale memory populations across numerous DIMMs per channel without compromising signal integrity in dense virtualization clusters.
3. Dual Rank x8 organization interleaves access across two internal rank groups, sustaining peak memory bandwidth to feed multiple CPU cores during heavy virtual machine consolidation.
4. The 4 GB capacity per module delivers a cost-efficient building block for hyper-converged infrastructure nodes that need moderate memory density with ECC protection.
5. 1600 MHz speed provides 12.8 GB/s of theoretical throughput per channel, comfortably handling high-concurrency workloads like in-memory caching and containerized microservices.
Judging by its RDIMM form factor and ECC support, the Samsung M393B5273DH0-CK0 is engineered for server environments where downtime isn’t an option. Its four defining features translate directly into real-world resilience and performance. ECC memory silently corrects single-bit errors, which is critical when bit flips caused by background radiation can corrupt financial transactions or database records without warning. Registered signal buffering stabilizes the command and address lines, allowing a virtualization host to pack multiple DIMMs per channel without signal degradation—essential when you’re running dozens of VMs on a single rack. Dual Rank x8 organization interleaves memory accesses across two internal ranks, boosting bandwidth for in-memory databases like Redis or SAP HANA during peak query loads without stalling the CPU. And DDR3-1600 frequency at CL11 strikes a pragmatic balance between speed and latency in dense storage servers where consistent, predictable response matters more than chasing peak clocks. In a virtualized cluster, ECC guards hypervisor state while registered buffering keeps all 24 DIMM slots usable, preventing silent crashes. For a transactional database, Dual Rank parallelism and ECC combine to ensure that every committed write remains accurate under heavy concurrency—protecting your data integrity from core to application.
General Virtualization
For a hypervisor hosting 10–15 moderate VMs, populate at least six identical M393B5273DH0-CK0 modules (24 GB total) across triple-channel or distributed memory banks to avoid NUMA bottlenecks. Configure DIMM sparing or mirroring if uptime is critical, leveraging ECC and registered buffering to maintain data integrity under mixed-workload pressure.
In-Memory Database
Deploy a full population of 12 or 24 modules per 2-socket system to maximize capacity and interleave bandwidth, reaching 48–96 GB of registered DDR3-1600. Enable rank interleaving in BIOS and pair with processors that support 1600 MT/s at maximum DIMM count, ensuring low-latency access for large in-memory datasets while ECC guards against silent corruption.
High-Performance Computing
Install 16 or 24 identical RDIMMs in balanced configurations (one DIMM per channel) to saturate memory bandwidth, which is critical for MPI-based workloads. Run at CL11 with 1.5 V, and validate that dual-rank x8 organization delivers consistent 1600 MT/s throughput; monitor thermal zones and leave no slots unpopulated in active compute nodes to sustain peak floating-point throughput.
Rigorously validated for servers; compatible with Dell R720, HP DL380p Gen8, IBM x3650 M4.
Q: Can I mix this M393B5273DH0-CK0 with other memory modules of different brands or speeds?
A: Mixing is not recommended for server environments. Using modules with different timings, ranks, or brands may cause stability issues and disable ECC functionality, risking data integrity.
Q: Is this memory compatible with my system?
A: It is compatible with servers supporting DDR3-1600 Registered ECC RDIMMs, such as Intel Xeon E5-2400/2600 v2 and select AMD Opteron 6300 series platforms. Verify 1.5V and quad-rank support.
Q: What is the recommended DIMM population order for optimal performance?
A: Follow your server board’s manual, typically populating slots per memory channel in sequential order (e.g., A1, B1, A2, B2) to balance load across channels and maximize throughput.
Q: Does this module support overclocking or XMP profiles?
A: No. This is a server-grade Registered ECC module operating strictly at JEDEC DDR3-1600 CL11 timings. XMP and overclocking are not supported to guarantee reliable mission-critical operation.
Q: What warranty and typical failure rate can I expect?
A: This module includes a one-year warranty. Designed for 24/7 operation, it achieves an enterprise-class annualized failure rate (AFR) below 0.5%, ensuring long-term reliability in data centers.