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| Model | M393B5273EB0-YK0 |
|---|---|
| Product Type | Memory Module |
| Compliance Standards | EU RoHS,FCC |
| Memory Capacity | 4 GB |
| Memory Technology | DDR3 |
| Product Voltage | 1.35V |
| RAM Speed | 1600MHz |
| RAM Standard | DDR3-1600/PC3-12800 |
| Error Identifying | ECC |
| Signal Type | Registered |
| Column Access Strobe (CAS) | CL11 |
| Rank | Dual Rank x8 |
| Quantity of Pins | 240-pin |
| RAM Genre | RDIMM |
This 4GB DDR3-1600 Registered ECC memory module (RDIMM) operating at 1.35V is purpose-built for legacy server platforms, excelling in virtualization, in-memory database caching, and data-integrity-critical workloads. Its dual-rank x8 organization boosts interleaving efficiency across multi-channel memory controllers, while the registered signal path and ECC error correction maintain robust signal integrity and correct single-bit errors in densely populated configurations.
1. ECC protection corrects single-bit and detects multi-bit errors in real time, preserving data integrity for financial ledgers and virtualized database instances where even a single undetected bit flip can cascade into critical application failures.
2. Registered buffering decouples the electrical load from the memory controller, enabling fully populated dual- or quad-channel server boards to sustain stable signal integrity when scaling up to terabyte-class RAM footprints.
3. Dual Rank x8 organization alternates row activations between internal rank groups, hiding precharge latency and keeping command buses fed, which translates directly into higher transactional throughput under heavy OLTP workloads.
4. This speed grade delivers the full bandwidth headroom of the PC3-12800 specification, ensuring that memory channels remain unsaturated during concurrent live-migration and big-data shuffling operations.
5. 1.35V low-voltage operation reduces both active and standby power consumption at the module level, cutting cumulative thermal output and electricity cost across hyperscale deployments running tens of thousands of memory sticks.
Judging by its RDIMM form factor, 240-pin interface, and ECC support, the Samsung M393B5273EB0-YK0 is engineered specifically for server environments where downtime is costly and data accuracy is non-negotiable. Its four defining characteristics translate directly into operational resilience.
First, ECC memory constantly detects and corrects single-bit errors, which are inevitable in large memory arrays due to background radiation. In a virtualized cluster running dozens of VMs, a silent bit flip would corrupt a database transaction or crash a critical application; ECC eliminates that risk at the hardware level. Second, the registered signal type buffers command and address lines, stabilizing electrical loads so you can populate all 24 DIMM slots in a 2U server without signal degradation—this is essential when scaling up to 768 GB for an in-memory database like Redis or SAP HANA, where capacity must meet hot data requirements. Third, the dual-rank x8 organization interleaves memory accesses, doubling effective concurrency and lifting bandwidth during heavy OLAP queries or live migration of VMs. Finally, operating at 1.35V instead of the standard 1.5V reduces thermal output in dense rack deployments, lowering cooling costs and extending component lifespan across a server fleet. Together, these features keep your services consistent, responsive, and energy-efficient under 24/7 utilization.
General Virtualization
For a typical hypervisor hosting 10–15 light VMs, populate six to eight 4 GB RDIMMs (24–32 GB total) across triple-channel or quad-channel memory architectures. Always install identical DIMMs in matched sets to maintain balanced interleaving and reliable ECC coverage under mixed-workload pressure.
In-Memory Database
Memory-resident databases like Redis or SAP HANA demand both capacity and fault resilience. Deploy at least twelve modules (48 GB) per socket, filling all channels to maximize bandwidth. Use 1.35 V low-voltage RDIMMs to curb thermal output in dense 24/7 nodes while relying on registered ECC to prevent silent data corruption.
High-Performance Computing (HPC)
HPC clusters prioritize throughput per core, so populate every channel with one 4 GB RDIMM to supply at least 2 GB per physical core. For dual-socket nodes, 16 identical modules (64 GB) ensure symmetric NUMA access. The 1600 MT/s speed and dual-rank design improve streaming memory bandwidth, which is critical for finite-element or CFD workloads that spill out of cache.
Strictly tested, compatible with servers like Dell PowerEdge R720, HP ProLiant DL380p Gen8, and IBM System x3650 M4.
Q: Can I mix this M393B5273EB0-YK0 with other memory modules of different brands or speeds?
A: Mixing is not recommended. This is a registered ECC DDR3-1600 module. Other modules may force the memory controller to downclock to the lowest common speed, potentially destabilizing your server. For mission-critical environments, we advise using identical part numbers.
Q: Is this memory compatible with my system?
A: This RDIMM is designed for server platforms supporting dual-rank 4GB DDR3-1600 ECC Registered memory at 1.35V. It is typically compatible with Intel Xeon E5-2600 v2 or AMD Opteron 6300 series platforms. Please consult your server's qualified vendor list (QVL).
Q: What is the recommended DIMM population order for optimal performance?
A: For dual-processor servers, populate identical DIMMs in matched banks per channel, starting with the slot farthest from the CPU. Always install in sets that balance the memory channels to maximize interleaving. Refer to your system board's manual for the exact configuration.
Q: Does this module support overclocking or XMP profiles?
A: No. This is a server-grade registered ECC RDIMM built to JEDEC standards. Overclocking or XMP is not supported, as server chipsets prioritize data integrity and 24/7 stability over variable frequencies.
Q: What warranty and typical failure rate can I expect?
A: This module comes with a 1-year warranty. Annualized failure rate (AFR) for server-grade RDIMM is typically below 0.5% under specified operating conditions, far lower than consumer DIMMs, due to rigorous component screening.