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| Model | M393B5273CH0-YK0 |
|---|---|
| Product Type | Memory Module |
| Compliance Standards | EU RoHS,FCC |
| Memory Capacity | 4 GB |
| Memory Technology | DDR3 |
| Product Voltage | 1.35V |
| RAM Speed | 1600MHz |
| RAM Standard | DDR3-1600/PC3-12800 |
| Error Identifying | ECC |
| Signal Type | Registered |
| Column Access Strobe (CAS) | CL11 |
| Rank | Dual Rank x8 |
| Quantity of Pins | 240-pin |
| RAM Genre | RDIMM |
This is a DDR3 Registered ECC memory module designed for legacy server platforms, where it excels in virtualization and memory-intensive database workloads that demand uncompromising data integrity. Its dual-rank x8 configuration combined with 1.35V low-voltage operation elevates memory density and energy efficiency, while the registered signal topology ensures stable command/address signaling across fully populated server boards.
1. ECC correction detects and repairs single-bit errors in real time, preventing silent data corruption in financial or database transactions.
2. Registered signal buffering stabilizes high-density memory configurations, enabling up to three DIMMs per channel without compromising signal integrity in virtualized environments.
3. A 1600 MHz clock speed delivers 12.8 GB/s peak bandwidth per channel, accelerating in-memory analytics and large cache lookups.
4. 1.35V low-voltage operation reduces power consumption per DIMM by roughly 15% compared to standard 1.5V, lowering cooling costs in dense rack deployments.
5. Dual Rank x8 organization interleaves access across two internal ranks, effectively hiding refresh overhead and boosting throughput under heavy multi-tenant workloads.
The Samsung M393B5273CH0-YK0 is a server-class DDR3 Registered DIMM, engineered for relentless data-center workloads. Its four defining characteristics directly address the real-world pain points of IT infrastructure. ECC memory actively corrects single-bit errors caused by background radiation, a silent threat that can corrupt transactions in a virtualization cluster hosting dozens of business-critical VMs. Without it, a single flipped bit could crash a hypervisor, taking entire service chains offline. The registered buffer, meanwhile, redrives address and command signals, guaranteeing rock-solid signal integrity when all memory channels are fully populated. That translates to greater capacity for dense in-memory databases like SAP HANA or Redis clusters, where loading terabytes of hot data into RAM is non-negotiable for sub-millisecond response. The dual-rank x8 organization further unlocks rank interleaving, letting the memory controller pipeline accesses between ranks to sustain throughput during high-concurrency query storms. Finally, the 1.35V ultra-low voltage slashes thermal dissipation per module. In a server farm of hundreds of nodes, that differential means cooler racks, lower fan speeds, and markedly reduced electricity costs over the hardware lifecycle. This module doesn’t just meet a spec sheet—it preserves uptime, accelerates analytics, and protects your operational budget.
Capacity Planning for M393B5273CH0-YK0 (Server Memory)
This 4GB DDR3-1600 registered DIMM with ECC and 1.35V low-voltage operation is designed for server platforms. The following guidance helps match module quantity and configuration to typical workload requirements while maintaining reliability.
General Virtualization
Populate all memory channels per CPU with identical 4GB RDIMMs to ensure balanced performance and ECC protection. A dual-socket server using six modules per CPU provides 24GB per socket, suitable for light to medium VM densities. For larger deployments, scale to three modules per channel while keeping populations symmetric across processors.
In-Memory Database
Maximize capacity by filling every available DIMM slot with these 4GB modules, even if operating at two DIMMs per channel lowers the frequency. A fully populated system with 12 or 18 slots per CPU delivers 48–72GB, enabling entire datasets to reside in RAM for real-time analytics. Always use identical modules to guarantee signal integrity.
High-Performance Computing
Prioritize memory bandwidth by installing one 4GB RDIMM per channel to sustain the full 1600MHz speed and CL11 latency. A quad-channel server with four modules offers 16GB of low-latency memory critical for bandwidth-bound simulations. Deploy identical configurations across all cluster nodes to maintain predictable performance.
Rigorously tested, this server memory ensures compatibility with Dell PowerEdge R720, HP DL380p Gen8, and similar systems.
Q: Can I mix this M393B5273CH0-YK0 with other memory modules of different brands or speeds?
A: Mixing is not recommended. Registered ECC modules require identical specifications. Different brands or speeds may cause instability, POST failures, or the system defaulting to the lowest common speed with potential performance degradation.
Q: Is this memory compatible with my system?
A: This 4GB DDR3-1600 Registered ECC RDIMM is designed for server platforms with Intel Xeon E5-2400/2600 v1/v2 or AMD Opteron 6300 series processors. Verify your board supports 1.35V dual-rank x8 RDIMMs.
Q: What is the recommended DIMM population order for optimal performance?
A: Follow your server board’s memory population guide. Typically, populate channels starting with slot 1, balancing dual-rank x8 RDIMMs across channels. For dual-processor systems, install equal capacity per CPU for memory interleaving.
Q: Does this module support overclocking or XMP profiles?
A: No. This is an enterprise-grade Registered ECC module that strictly adheres to JEDEC DDR3-1600/PC3-12800 standards. Overclocking and XMP profiles are not supported to ensure data integrity and system reliability.
Q: What warranty and typical failure rate can I expect?
A: This module includes a one-year warranty. Typical annualized failure rate (AFR) is very low, around 0.2%–0.5%, due to rigorous binning and testing for 24/7 server environments. Premature failures are rare.