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Samsung M471B5173EB0-CK0 4GB DDR3 SoDIMM 1600MT/s | Low-Power SODIMM

MPN:M471B5173EB0-CK0 By:Samsung Warranty:1 year
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General

Error IdentifyingNon-ECC
Signal TypeUnbuffered
Product TypeMemory Module
Compliance StandardsCE,WEEE,RoHS
Memory Capacity4 GB
Memory TechnologyDDR3
RAM Speed1600
RAM StandardDDR3-1600/PC3-12800
Column Access Strobe (CAS)CL11
RankSingle Rank x8
Quantity of Pins204-pin
RAM GenreSoDIMM

Engineer's Note

This DDR3-1600 SODIMM is designed for notebook and mobile workstation platforms, delivering a seamless upgrade for older laptops that require reliable, plug-and-play memory expansion. Its single-rank x8 organization and CL11 latency ensure stable signal integrity and efficient power usage, making it ideal for extending the life of portable systems used in everyday productivity and light multitasking workloads.

Technical Specs & Insights

1. Compact SoDIMM design ensures a straightforward drop-in upgrade for ultraportable laptops, allowing users to easily replace or expand memory without tools or technical expertise.
2. Entry-level capacity comfortably runs modern web browsers, office suites, and video conferencing apps simultaneously, keeping everyday multitasking fluid without relying on slow virtual memory.
3. Mature DDR3 technology guarantees seamless electrical and BIOS compatibility across an extensive range of aging notebook platforms, making it a reliable, no-hassle refresh option.
4. Enhanced clock rate accelerates system boot, application launches, and file operations, giving mainstream laptops a perceptible speed lift during daily productivity workloads.
5. Low column access latency reduces memory access delays, visibly sharpening UI responsiveness and making rapid task switching feel instantaneous on budget-conscious portable systems.

Why These Specs Matter

The M471B5173EB0-CK0 is a notebook memory module, identified by its 204-pin SODIMM form factor, and it directly addresses the real-world limitations that frustrate laptop users every day. As an unbuffered, non-ECC DDR3-1600 solution, it delivers exactly what mobile platforms require: straightforward compatibility, manageable power draw, and a tangible speed boost without added complexity that notebook chipsets cannot leverage. In a typical thin-and-light ultrabook upgrade, replacing a sluggish 2GB module with this single-rank x8 4GB unit yields an immediately smoother experience. Its single-rank configuration reduces the electrical load on the memory controller, which helps stabilize battery runtime and minimizes heat generation inside a cramped chassis—a critical factor when you need to stretch a charge through back-to-back meetings. For the mobile workstation user, populating a secondary SODIMM slot with this module eliminates the crippling disk thrashing that occurs when editing large spreadsheets or running a lightweight virtual machine for testing. The CL11 latency and 1600MHz bandwidth keep multiple applications responsive, preventing that frustrating cursor freeze during a deadline. Ultimately, this plug-and-play upgrade means you recover productivity on the road without investing in new hardware, with the CE, WEEE, and RoHS compliance providing assurance of reliable, environmentally responsible manufacturing.

Endurance & Reliability

This 4GB DDR3L-1600 SO-DIMM is targeted at notebook upgrades. Below are capacity planning recommendations for common laptop scenarios.

Laptop Upgrade
For aging laptops with a single 4GB module, add a second identical SODIMM to reach 8GB in dual‑channel mode. This simple doubling of capacity markedly improves multitasking and integrated graphics performance, making it a cost‑effective way to revive a sluggish system without replacing the entire platform.

Mobile Workstation
Populate both slots with two of these modules to form an 8GB dual‑channel configuration. This setup handles moderate 2D CAD, photo editing, or compilation tasks smoothly. However, memory‑intensive 3D rendering, large virtual machines, or heavy datasets will quickly exhaust 8GB—check your laptop’s maximum supported capacity and consider migrating to 2×8GB or 2×16GB kits for genuine workstation workloads.

Ultrabook Power Saving
Operating at a low 1.35V, this module reduces power draw compared to standard 1.5V DDR3, directly extending battery runtime in ultrathin laptops. A single 4GB SO‑DIMM suffices for lightweight productivity and web browsing, while adding a second identical DIMM raises capacity to 8GB with only a marginal increase in energy consumption, preserving the portability and cool operation prized in ultrabooks.

Verified Compatibility

Thoroughly tested and compatible with laptops like Dell Latitude E6440, Lenovo ThinkPad T440, and HP EliteBook 840 G1.

FAQ

Q: Can I mix this M471B5173EB0-CK0 with other memory modules of different brands or speeds?

A: Mixing memory is not recommended, as differing brands, speeds, or timings can cause instability. For best results, use identical modules. If mixed, the system will default to the slowest speed and most relaxed timings, potentially degrading performance.

Q: Is this memory compatible with my system?

A: This SO-DIMM is designed for notebooks or Mini-ITX boards that support DDR3-1600/PC3-12800, 204-pin, 1.35V/1.5V operation. Please verify your laptop's exact model or manufacturer's memory QVL to ensure compatibility with single-rank, x8, unbuffered, non-ECC modules.

Q: What is the recommended DIMM population order for optimal performance?

A: In dual-slot notebooks, install this module in the primary slot, often marked '0' or 'A'. For dual-channel systems, pair it with an identical module to maximize bandwidth. Single-rank x8 modules like this perform optimally in matched pairs.

Q: Does this module support overclocking or XMP profiles?

A: This is a JEDEC-compliant DDR3-1600 CL11 module without XMP profiles; overclocking is not supported. It operates reliably at its rated standard speed and timings, ensuring stable performance in mobile platforms not designed for memory overclocking.

Q: What warranty and typical failure rate can I expect?

A: This module is backed by a one-year warranty. Typical annualized failure rates for Samsung DDR3 SO-DIMMs are well below 0.5% under normal operation. Proper handling and ESD precautions during installation will maximize long-term reliability.

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