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| Model | M393B1K70CH0-YH9-S |
|---|---|
| Compliance Standards | EU RoHS,FCC |
| Product Type | Memory Module |
| Memory Capacity | 8 GB |
| Memory Technology | DDR3 |
| Product Voltage | 1.35V |
| RAM Speed | 1333MHz |
| RAM Standard | DDR3-1333/PC3-10600 |
| Error Identifying | ECC |
| Signal Type | Registered |
| Column Access Strobe (CAS) | CL9 |
| Rank | Dual Rank x4 |
| Quantity of Pins | 240-pin |
| RAM Genre | RDIMM |
This is a server-class DDR3 registered ECC memory module, purpose-built for enterprise platforms running virtualization, in-memory databases, and other data-integrity-critical workloads. Its dual-rank x4 architecture and registered signaling enhance channel interleaving and signal stability, while CL9 latency and 1.35V low-voltage operation ensure responsive, energy-efficient error correction.
1. ECC error correction silently detects and repairs single-bit memory faults in real time, preserving data integrity for financial transactions and database operations where even a single flipped bit can cause costly corruption.
2. Registered signal buffering strengthens command and address integrity across fully loaded memory channels, enabling stable 24/7 operation in dense rack servers that demand maximum DIMM population.
3. 1.35V low-voltage operation cuts per-DIMM power consumption substantially, lowering total energy expenditure and cooling demands in hyperscale data centers running thousands of nodes simultaneously.
4. Dual Rank x4 organization doubles interleaving opportunities, raising effective memory bandwidth to keep latency-sensitive virtual machines responsive during heavy consolidation workloads.
5. 1333MHz clock speed delivers consistent throughput for concurrent enterprise services, ensuring steady performance in multi-threaded ERP, CRM, or middleware applications under constant user load.
The Samsung M393B1K70CH0-YH9-S is a server-class Registered DIMM purpose-built for environments where uptime and data fidelity are non-negotiable. Its integrated ECC technology silently detects and corrects single-bit memory errors in real time, directly shielding your virtualization cluster from silent data corruption and preventing an errant bit flip from crashing multiple guest systems or invalidating a financial transaction inside an in-memory database like Redis or SAP HANA. The registered buffer decouples the memory controller from heavy bus loads, which means you can fully populate all 24 or more slots on a server motherboard without signal degradation, enabling reliable scaling to hundreds of gigabytes for dense private clouds. The dual-rank x4 organization interleaves memory accesses across two internal ranks, delivering consistently higher sustained bandwidth that translates into noticeably faster query responses and smoother performance under the multi-threaded, bursty workloads of business intelligence applications. Operating at a low 1.35V, the module also draws measurably less power than conventional 1.5V DIMMs, shrinking your thermal footprint and cumulative energy bill across a fleet of servers while still delivering the stable 1333MHz clock and CAS latency 9 predictability your applications expect.
General Virtualization
For moderate-density virtualization hosts, populate at least six of these 8 GB RDIMMs across triple-channel memory controllers to achieve 48 GB total capacity. This provides balanced resources for 10–15 lightweight VMs while maintaining ECC reliability. Opt for 1.35 V operation to reduce power draw in always-on environments without sacrificing stability.
In-Memory Database
Maximize capacity per socket by installing the maximum supported number of these registered DIMMs — typically 12 or 24 slots — to build a 96 GB or 192 GB footprint. The dual-rank x4 organization and ECC ensure excellent data integrity under constant, latency-sensitive read/write loads. Pair with interleaving-aware BIOS settings to fully utilize the registered command buffer for large dataset caching.
High-Performance Computing
Populate all memory channels symmetrically with equal-capacity DIMMs to maintain uniform bandwidth across nodes; for a dual-socket server, 16 modules (128 GB total) is a common sweet spot. The registered, dual-rank design enables stable, high-density configurations needed for tightly coupled parallel tasks. Use the low 1.35 V voltage to help control thermal output in dense clusters without throttling memory throughput.
Rigorously tested server memory compatible with Dell PowerEdge R720, HP ProLiant DL380p Gen8, and Cisco UCS C220 M3.
Q: Can I mix this M393B1K70CH0-YH9-S with other memory modules of different brands or speeds?
A: Mixing is not recommended. This RDIMM requires identical registered ECC modules to avoid stability issues. Differences in rank, voltage, or timings may cause system faults or prevent boot.
Q: Is this memory compatible with my server? It’s DDR3, but I have an Intel Xeon E5 platform.
A: Compatibility depends on your board’s qualified vendor list. This DDR3-1333 registered ECC DIMM supports Intel Xeon E5 and select AMD Opteron platforms requiring 1.35V low-voltage RDIMMs.
Q: What is the recommended DIMM population order for optimal performance?
A: Populate identical DIMMs per channel following your server manual—usually fill blue slots first for dual-processor configurations. Balanced memory across CPUs ensures uniform latency and maximum throughput.
Q: Does this module support overclocking or XMP profiles?
A: No, server-class registered ECC memory prioritizes reliability over overclocking. It adheres to JEDEC specifications only, ensuring 24/7 stability under enterprise workloads without XMP or voltage adjustments.
Q: What warranty and typical failure rate can I expect for this Samsung module?
A: It carries a one-year warranty. Samsung’s stringent testing yields very low field failure rates—typically below 0.1% annually—making it ideal for mission-critical server environments.