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Samsung M393B1K70DH0-CH9E8 8GB DDR3 RDIMM 1333MT/s | Registered ECC

MPN:M393B1K70DH0-CH9E8 By:Samsung Warranty:1 year
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General

ModelM393B1K70DH0-CH9E8
Compliance StandardsEU RoHS,FCC
Product TypeMemory Module
Memory Capacity8 GB
Memory TechnologyDDR3
Product Voltage1.5V
RAM Speed1333MHz
RAM StandardDDR3-1333/PC3-10600
Error IdentifyingECC
Signal TypeRegistered
Column Access Strobe (CAS)CL9
RankDual Rank x4
Quantity of Pins240-pin
RAM GenreRDIMM

Engineer's Note

This Samsung M393B1K70DH0-CH9E8 is a registered DDR3-1333 RDIMM with ECC, ideally suited for entry-level servers and storage platforms running virtualization or light memory database workloads where data integrity is mandatory. Its dual-rank x4 organization and registered signal type enhance signal stability and memory channel efficiency, while the CL9 latency provides a solid balance between speed and command rate for consistent 24/7 operation.

Technical Specs & Insights

1. ECC error correction actively detects and corrects single-bit memory faults, preserving data integrity for critical financial transactions and database workloads.
2. Registered signal buffering stabilizes command and address lines across fully populated server boards, enabling seamless scaling to high-density memory configurations.
3. Dual Rank x4 organization maximizes bank-level parallelism, sustaining throughput during heavy virtualization when multiple VMs contend for shared memory resources.
4. 1333MHz clock speed delivers a balanced 10.6 GB/s peak bandwidth per channel, efficiently feeding older-generation server CPUs without exceeding platform power limits.
5. 8 GB capacity per module offers a cost-optimized building block for mid-range cloud nodes, striking a practical balance between instance density and per-socket memory footprint.

Why These Specs Matter

The M393B1K70DH0-CH9E8 is an 8GB DDR3-1333 Registered DIMM, purpose-built for servers and enterprise workloads where stability is not just desirable—it is non-negotiable. Its four core characteristics directly address the real pain points of IT infrastructure managers.

First, ECC error correction is the silent guardian against single-bit memory errors caused by background radiation or electrical noise. In a virtualization cluster running dozens of VMs on a hypervisor, an undetected bit flip can corrupt a database transaction or silently crash a guest. ECC catches and corrects these errors in real time, turning a potential outage into a non-event. Second, the registered signal buffer stabilizes high-density memory configurations by reducing the electrical load on the memory controller. When you populate all 24 DIMM slots in a rack server to support a growing in-memory database like Redis, registered buffering prevents signal degradation and ensures full-speed boot and operation without intermittent failures. Third, the dual-rank x4 architecture increases bank-level parallelism, improving bandwidth utilization under heavy, concurrent access patterns—exactly what you need when hundreds of users pound a transactional database. Finally, a CAS latency of 9 at 1333MHz delivers deterministic, low-latency response that keeps database query times consistent during peak hours. For the system administrator, these features mean fewer 3 a.m. pages, higher VM density, and the confidence to let critical applications scale without compromising data integrity.

Endurance & Reliability

The M393B1K70DH0 is a server-class DDR3 1333MHz Registered ECC RDIMM (8 GB, dual-rank x4). Proper capacity planning depends on workload:

General Virtualization
Start by populating every memory channel with one 8 GB module for symmetric 64 GB on an 8-channel platform. To scale, add a second identical DIMM per channel (128 GB) while preserving dual-rank balance and avoiding downshifts to 1066 MHz. ECC error correction is crucial for multi-tenant stability.

In-Memory Database
Install two dual-rank 8 GB RDIMMs per channel (2DPC) at 1333 MT/s where the server BIOS allows it, achieving 128 GB on a dual-socket four-channel node. Matching modules maintain CL9 latency and maximize interleaving; populate all channels to minimize access skew.

HPC
Use a single 8 GB DIMM per channel to keep the bus at full 1333 MHz and deliver peak bandwidth. Symmetrical population across all CPU sockets eliminates NUMA bottlenecks, and ECC safeguards computational results during long-running simulations. This configuration is typical for memory-bandwidth-sensitive CFD or weather models.

Verified Compatibility

Rigorously tested DDR3 RDIMM, compatible with Dell R720/R620, HP DL380p Gen8, IBM x3650 M4.

FAQ

Q: Can I mix this M393B1K70DH0-CH9E8 with other memory modules of different brands or speeds?

A: Mixing is strongly discouraged for this registered ECC server memory. Different brands or speeds may cause instability, reduced performance, or boot failures. Always use identical modules from the same validated kit to ensure full compatibility and reliability.

Q: Is this memory compatible with my system?

A: This DDR3-1333 RDIMM is designed for servers using Intel Xeon 5500/5600 series or AMD Opteron 6100/6200 platforms. Please verify your board supports registered ECC DDR3 with 1.5V and dual-rank x4 configuration for proper operation.

Q: What is the recommended DIMM population order for optimal performance?

A: Populate identical modules in sets across the memory channels, following your server board’s guide. Typically, fill all slots of a bank with matching DIMMs to enable balanced interleaving and maximum throughput on this dual-rank RDIMM.

Q: Does this module support overclocking or XMP profiles?

A: No. This Samsung server RDIMM adheres strictly to JEDEC DDR3-1333 standards and does not support overclocking or XMP. It is engineered for 24/7 stability at rated 1333MHz with CL9 latencies, not for performance tuning.

Q: What warranty and typical failure rate can I expect?

A: This module includes a one-year warranty. Samsung’s stringent testing yields a typical Annualized Failure Rate (AFR) well below 0.5%, ensuring high reliability and minimal field returns for data-center environments.

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