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Samsung M393B1K70EB0-CH902 8GB DDR3 RDIMM 1333MT/s|Reliable ECC Memory

MPN:M393B1K70EB0-CH902 By:Samsung Warranty:1 year
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General

ModelM393B1K70EB0-CH902
Product TypeMemory Module
Compliance StandardsEU RoHS,FCC
Memory Capacity8 GB
Memory TechnologyDDR3
Product Voltage1.5V
RAM Speed1333MHz
RAM StandardDDR3-1333/PC3-10600
Error IdentifyingECC
Signal TypeRegistered
Column Access Strobe (CAS)CL9
RankDual Rank x4
Quantity of Pins240-pin
RAM GenreRDIMM

Engineer's Note

This Samsung 8GB DDR3-1333 Registered ECC RDIMM (M393B1K70EB0-CH902) is purpose-built for server platforms, delivering maximum data integrity in virtualization and in-memory database workloads where silent memory errors are unacceptable. Its dual-rank x4 organization and registered signal architecture enhance signal stability under high-density configurations, while ECC with a CL9 latency ensures reliable, efficient operation at 1.5V.

Technical Specs & Insights

1. ECC protection silently corrects single-bit memory errors, preserving data integrity for financial transactions and database operations in always-on enterprise servers.
2. Registered buffering reduces electrical load per DIMM, allowing fully populated memory channels that maintain signal stability across dense multi-socket server configurations.
3. Dual Rank x4 organization harnesses bank interleaving to keep memory channels saturated, which sustains high throughput for multiple virtual machines under heavy consolidation.
4. An 8 GB module supplies cost-effective capacity for dedicated caching layers or light container hosts where reliable data protection matters more than maximum density.
5. DDR3-1333 speed delivers consistent response times for legacy workloads, balancing adequate bandwidth with modest power consumption in always-running server environments.

Why These Specs Matter

The M393B1K70EB0-CH902 is an 8GB DDR3-1333 RDIMM purpose-built for server environments, where downtime is measured in lost revenue and data integrity is non-negotiable. Its ECC technology continuously scans every memory cell, detecting and correcting single-bit errors—a silent threat in large-scale in-memory databases like SAP HANA or Redis, where a flipped bit can quietly corrupt financial transactions or customer records. The registered signal type buffers command and address lines, enabling you to fully populate a server’s memory channels without signal degradation. This is critical for dense virtualization clusters running dozens of VMs per node: you get the massive capacity and rock-steady reliability needed to avoid hypervisor crashes under multi-tenant pressure. The dual-rank x4 organization introduces rank interleaving, which overlaps memory access bursts between two internal ranks to boost effective bandwidth. When multiple virtual machines or an analytics engine hammer the memory bus simultaneously, this design reduces contention and accelerates response times. Finally, the industry-standard 1.5V DDR3-1333 spec ensures broad platform compatibility and predictable thermals, making bulk upgrades or refreshes in existing data centers seamless. It transforms aging infrastructure into a stable workhorse for virtualized workloads and memory-resilient applications.

Endurance & Reliability

General Virtualization
This 8 GB DDR3-1333 RDIMM is suited for moderate-density virtualization hosts. Deploy six identical modules (48 GB total) across three channels per socket to balance capacity and memory bandwidth. Populate one DIMM per channel to maintain 1333 MT/s speed, providing enough headroom for 20–30 light VMs.

In-Memory Database
In-memory databases demand large capacity and low latency. Use a fully balanced configuration with eight modules (64 GB total) on a dual-socket platform, installing two DIMMs per channel. Although speed drops to 1066 MT/s on some systems with dual-rank x4 loads, the increased capacity keeps entire datasets resident in RAM, critical for Redis or Memcached.

High-Performance Computing
For HPC, memory bandwidth is paramount. Configure three identical modules per socket (24 GB per CPU), one per channel, to maximize 1333 MT/s throughput. This triple-channel, single-rank-per-channel layout minimizes access latency for compute-bound MPI workloads, while 24 GB suffices for many node-level simulations. Add a second set only if dataset size dictates higher capacity.

Verified Compatibility

Rigorously tested, this 8GB DDR3 RDIMM is verified compatible with Dell PowerEdge R720, HP ProLiant DL380 Gen8, and similar servers.

FAQ

Q: Can I mix this M393B1K70EB0-CH902 with other memory modules of different brands or speeds?

A: Mixing different brands or speeds with this registered ECC server module is strongly discouraged. It can cause signal integrity issues and instability. Always use identical part numbers per server for validated reliability.

Q: Is this memory compatible with my system?

A: This DDR3-1333 registered ECC RDIMM is designed for Intel Xeon E5-2400/v2 or AMD Opteron 6300 series platforms with C602/C204 chipsets. Check your server's QVL to verify compatibility with this Samsung module.

Q: What is the recommended DIMM population order for optimal performance?

A: For dual-socket servers, populate identical DIMMs per channel starting with the bank farthest from the CPU. Refer to the system board silkscreen labels or manual for the exact slot order sequence.

Q: Does this module support overclocking or XMP profiles?

A: No. This server memory strictly follows JEDEC DDR3-1333 standards without XMP support. Overclocking is not available; operating at validated timings ensures 24/7 data integrity and long-term reliability.

Q: What warranty and typical failure rate can I expect?

A: This Samsung module includes a one-year warranty. As an enterprise-grade RDIMM, it achieves an AFR below 0.5% when operated within specifications, providing robust longevity for critical workloads.

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