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| Product Type | Memory Module |
|---|---|
| Memory Capacity | 8 GB |
| Memory Technology | DDR3 |
| Product Voltage | 1.35 V |
| RAM Speed | 1333 MHz |
| RAM Standard | DDR3-1333/PC3-10600 |
| Error Identifying | ECC |
| Signal Type | Registered |
| Column Access Strobe (CAS) | CL9 |
| Rank | Dual Rank x4 |
| Quantity of Pins | 240-pin |
| RAM Genre | RDIMM |
This 8GB DDR3-1333 Registered ECC module (PC3-10600) is engineered for server platforms where data integrity is critical, making it ideal for virtualization and in-memory database workloads. Its dual-rank x4 organization enhances bank interleaving for sustained throughput, while the 1.35V low-voltage operation and CL9 latency help maintain energy efficiency in dense rack deployments.
1. ECC error correction actively detects and corrects single-bit memory errors, preventing silent data corruption that could compromise transactional database integrity or cause unexplained hypervisor crashes in multi-tenant virtualized environments.
2. Registered signal type buffers command and address buses to maintain signal integrity across fully loaded server memory channels, ensuring reliable operation at scale even when all DIMM slots are populated.
3. Dual Rank x4 organization interleaves memory accesses across two internal rank groups, keeping server memory channels fully saturated and delivering predictable throughput for consolidated VM workloads under heavy memory pressure.
4. 1.35V low-voltage operation reduces power draw per DIMM, cutting aggregate energy consumption and cooling overhead in dense data center deployments where every watt directly impacts operational expenditure.
5. 8GB capacity density offers an efficient building block for entry-level virtualization hosts and scale-out web servers, striking a balance between per-channel memory footprint and cost-per-gigabyte in high-volume deployments.
When you deploy a virtualization cluster or an in-memory database like SAP HANA, memory integrity and scalability are non-negotiable. The Samsung M393B1K70EB0-YH9, an 8GB DDR3 Registered ECC DIMM, addresses these demands head-on. Its ECC engine automatically corrects single-bit errors caused by cosmic radiation or electrical noise, preventing silent data corruption that could crash virtual machines or compromise financial transactions. The Registered buffer isolates the memory controller from heavy bus loads, enabling you to fully populate server slots without signal integrity loss—essential for scaling VMs to maximize consolidation ratios. Its dual-rank x4 architecture interleaves accesses across internal banks, boosting throughput for latency-sensitive workloads; your Redis instances serve queries faster even under peak loads. Finally, operating at just 1.35V instead of the standard 1.5V, this low-voltage module reduces energy draw per DIMM, which across a fleet of servers slashes cooling and power bills while supporting green data center goals.
Capacity Planning Guide for DDR3-1333 ECC Registered Server Memory (8GB RDIMM)
General Virtualization
Equip dual-socket servers with at least six to eight modules per CPU to populate all memory channels, delivering 48–64 GB per node for moderate consolidation. This configuration supports 20–30 light to medium VMs with balanced bandwidth and acceptable overcommit ratios. Low-voltage 1.35 V operation reduces power costs in dense virtualization farms.
In-Memory Database
Maximize capacity by populating every DIMM slot—common two-socket platforms can hold 12–24 modules, providing 96–192 GB for in-memory datasets. Combine the dual-rank x4 organization and CL9 latency to achieve steady low-latency access for Redis, Memcached, or SAP HANA workloads. Where possible, prefer larger-capacity RDIMMs, but filling all channels with these 8 GB modules remains a viable start.
High-Performance Computing
Install eight identical modules per node (one per channel) to fully utilize the memory bandwidth demanded by HPC applications. The dual-rank construction enhances bank-level parallelism, improving throughput for MPI‑based simulations. Power-efficient 1.35 V RDIMMs help control total system power in multi‑node clusters without compromising the registered signal integrity essential at scale.
Rigorously tested server memory, validated for Dell PowerEdge R720, HP ProLiant DL380p Gen8, IBM System x3650 M4, and more.
Q: Can I mix this M393B1K70EB0-YH9 with other memory modules of different brands or speeds?
A: Mixing RDIMMs of different brands or speeds is not recommended in server environments. It often leads to instability, reduced performance, or boot failures. All modules should match in speed, rank, and timings for validated reliability.
Q: Is this memory compatible with my system?
A: This DDR3-1333 Registered ECC module is compatible with servers using Intel Xeon E5-2600/E5-2400 or AMD Opteron 6300 series platforms. Verify your motherboard supports 1.35V dual-rank RDIMMs and consult your system's qualified vendor list (QVL).
Q: What is the recommended DIMM population order for optimal performance?
A: Populate identical DIMMs per channel, starting with the slot farthest from the CPU. Follow the server board’s manual for balanced memory configuration, typically filling blue slots first. Symmetric population across memory channels maximizes bandwidth.
Q: Does this module support overclocking or XMP profiles?
A: No, this server-grade RDIMM adheres to JEDEC DDR3-1333 standards and does not support overclocking or XMP profiles. It is built for 24/7 stability and data integrity in enterprise environments, not for performance tuning.
Q: What warranty and typical failure rate can I expect?
A: We provide a one-year warranty. Samsung server memory typically exhibits an annualized failure rate (AFR) below 0.5% under specified operating conditions, ensuring high reliability for mission-critical workloads.