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Samsung M391B1G73BHO-YH9 8GB DDR3 UDIMM 1333MT/s | ECC Server Memory

MPN:M391B1G73BHO-YH9 By:Samsung Warranty:1 year
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General

ModelM391B1G73BHO-YH9
Product TypeMemory Module
Compliance StandardsEU RoHS,FCC
Memory Capacity8 GB
Memory TechnologyDDR3
Product Voltage1.35V
RAM Speed1333MHz
RAM StandardDDR3-1333/PC3-10600
Error IdentifyingECC
Signal TypeUnbuffered
Column Access Strobe (CAS)CL9
RankDual Rank x8
Quantity of Pins240-pin
RAM GenreUDIMM

Engineer's Note

This DDR3L ECC UDIMM with a dual-rank x8 organization and CL9 latency delivers strong data integrity and stable signal integrity for single-socket servers or entry-level workstations. Its 1.35V low-voltage operation and 1333MHz speed make it ideal for memory-sensitive workloads like virtualization and small databases where reliable, energy-efficient performance is essential.

Technical Specs & Insights

1. ECC protection corrects single-bit memory errors in real time, preserving data integrity for mission-critical workloads that cannot tolerate silent corruption.
2. The 1.35V low-voltage design reduces server power draw and thermal output, lowering total cost of ownership in dense rack deployments.
3. Dual Rank x8 configuration interleaves accesses across rank boundaries, sustaining high channel utilization and predictable throughput under virtualized environments.
4. A capacity of 8 GB supplies sufficient headroom for lightweight hypervisors and container hosts, preventing swapping that would degrade service response times.
5. Operating at 1333 MHz, the module delivers steady bandwidth for entry-level server tasks, ensuring smooth multi-threaded processing without becoming a bottleneck.

Why These Specs Matter

Designed for entry-level servers and workstations, the Samsung M391B1G73BHO-YH9 UDIMM ECC module transforms reliability and efficiency from abstract specifications into tangible business outcomes. Its ECC engine directly guards against single-bit errors caused by background radiation—without it, a flipped bit in a virtualized cluster could silently corrupt your hypervisor memory and bring down dozens of VMs, costing hours of downtime. In an in-memory database scenario like Redis or Memcached, that same error can return wrong query results or crash transaction logs, eroding user trust in real time. The 1.35V low-voltage design slashes power draw across a fleet of 24/7 servers; over a three-year refresh cycle, that reduction lowers cooling demands and shaves measurable dollars off your energy bill without sacrificing clock integrity. Meanwhile, its dual-rank x8 organization interleaves memory pages so dense virtualization workloads and database joins experience higher sustained bandwidth, preventing the stuttering latency that starves CPU pipelines. With CL9 timing and true PC3-10600 speed, this module delivers the predictable responsiveness your memory-hungry applications demand—keeping uptime high and troubleshooting time low.

Endurance & Reliability

General Virtualization
For modest virtualization hosts using DDR3-era platforms, populate all available channels with identical 8GB ECC UDIMMs to maximize memory bandwidth and reliability. A typical single-socket server benefits from four to six modules (32–48GB), enabling smooth operation of 8–12 lightweight virtual machines while retaining error correction for data integrity.

In-Memory Database
In-memory databases demand both capacity and fault tolerance, making these ECC modules essential for guarding against silent corruption. Equip the server with the maximum supported UDIMMs—often six or eight slots on platforms like Intel Xeon E3-1200 v2/v3—to reach 48–64GB, allowing substantial datasets to reside entirely in RAM for rapid query performance.

High-Performance Computing (HPC)
HPC workloads on DDR3 nodes can still serve compute-bound tasks like molecular dynamics if configured for balanced throughput. Install modules in matched sets per memory channel (typically four identical 8GB DIMMs for quad-channel boards) to exploit interleaving and dual-rank parallelism, delivering 32GB of ECC-protected capacity at the lowest practical CAS latency with 1.35V power savings.

Verified Compatibility

Rigorously tested, compatible with servers: Dell PowerEdge T110 II, HP ProLiant MicroServer Gen8, Lenovo ThinkServer TS140.

FAQ

Q: Can I mix this M391B1G73BHO-YH9 with other memory modules of different brands or speeds?

A: Mixing is not recommended; ECC UDIMMs require identical specifications to maintain signal integrity and error correction. Use modules with the same Samsung part number for guaranteed compatibility.

Q: Is this memory compatible with my system?

A: It is compatible with platforms supporting DDR3 ECC Unbuffered DIMMs, such as Intel Xeon E3-1200 v2/v3 or AMD AM3+ with ECC support. Verify your motherboard's ECC UDIMM validation.

Q: What is the recommended DIMM population order for optimal performance?

A: For dual-socket or multi-channel boards, populate identical DIMMs in the same channel slots (e.g., blue slots first) per the motherboard manual, ensuring balanced memory across channels for best ECC performance.

Q: Does this module support overclocking or XMP profiles?

A: No, this is a JEDEC-compliant server module without XMP. Overclocking is not supported; it runs at default 1333MHz with CL9 timings for reliability and 1.35V low voltage.

Q: What warranty and typical failure rate can I expect?

A: This module includes a 1-year warranty. As a Samsung enterprise-grade product, it has a very low annualized failure rate (AFR) under 0.5% in controlled environments, ensuring long-term reliability.

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