General

Engineer's Note

Designed for server platforms, the M393B1G70EB0-YK000 is an 8GB DDR3-1600 registered DIMM that combines ECC error correction with a 1.35V low-voltage operation to ensure data integrity and power efficiency in dense virtualization and in‑memory database workloads. Its single‑rank x4 configuration and registered signal buffering enhance electrical stability on the memory bus, making it particularly well‑suited for systems that require high memory capacity per channel without sacrificing reliability.

Technical Specs & Insights

1. Error-correcting code detects and repairs bit-flip errors in real time, preserving transactional integrity across virtualization clusters and long-running database instances.
2. Registered buffering decouples the command/address bus, allowing servers to populate all DIMM slots without signal degradation for maximum scalable memory capacity.
3. Low-voltage operation reduces overall energy draw per DIMM, directly cutting datacenter cooling demands and enabling denser rack deployments within fixed power envelopes.
4. The 1600 MT/s transfer rate sustains consistent interleaved throughput, keeping latency-sensitive applications and live VM migrations moving without memory-side contention.
5. An 8GB single-rank module provides a right-sized building block, cost-effectively boosting total system memory for entry-to-midrange virtualization and light container hosts.

Why These Specs Matter

The Samsung M393B1G70EB0-YK002 is an RDIMM server module whose four key traits ensure data center resiliency. ECC detects and corrects single-bit errors, eliminating silent data corruption. In a virtualized cluster, a cosmic ray flipping a bit in a VM’s memory could corrupt a database transaction; ECC quietly recovers it, keeping your applications online. This prevention of data corruption is mandatory for financial services and healthcare platforms where every transaction must be accurate. Registered signal buffering decouples the bus from the DRAM, enabling full-slot population—vital when consolidating dozens of VMs onto a single host with 192 GB+ configurations. The 1.35V low-voltage design slashes power and cooling expenses, a noticeable saving across a server farm running in-memory caches 24/7. Finally, DDR3-1600 speed at CL11 supplies 12.8 GB/s bandwidth. For an in-memory database like Redis, this guarantees consistent sub-millisecond latency under heavy read/write loads. This memory safeguards uptime while lowering your total cost of ownership.

Endurance & Reliability

General Virtualization
Populate all memory channels equally with 8 GB RDIMMs — typically six or eight modules per host — to maximize bandwidth for mixed VM workloads. A 48–64 GB total (6×8 GB or 8×8 GB) using this low-voltage 1.35V module reduces power draw in dense hypervisor clusters while ECC ensures data integrity across many guest operating systems.

In-Memory Database
Assign large, contiguous memory pools by filling every DIMM slot with identical 8 GB modules, achieving capacities of 96 GB or 128 GB on dual-socket servers. The single-rank x4 design improves command rate and bank-level parallelism, which benefits latency-sensitive in-memory datasets. Pair with memory interleaving for higher sustained throughput on large key-value stores.

High-Performance Computing (HPC)
Install a balanced count of 8 GB RDIMMs — often 12 or 16 sticks per node — to deliver maximum aggregate bandwidth per CPU socket. Registered, ECC memory is essential for long-running parallel simulations, and 1600 MHz operation with CL11 offers predictable access latency. In fat-node configurations, opt for the highest supported DIMM count to feed multi-core processors efficiently while maintaining strict power budgets via 1.35V operation.

Verified Compatibility

Server memory, rigorously tested. Compatible with Dell PowerEdge R720, HPE DL380p Gen8, Lenovo x3650 M4, and similar DDR3 registered platforms.

FAQ