General

Engineer's Note

This Samsung DDR3-1600 Registered ECC RDIMM is engineered for legacy server platforms, delivering reliable 8 GB capacity with dual-rank x4 organization that balances density and signal integrity for virtualization and memory-intensive database workloads. Its registered signal architecture and ECC error correction ensure stable operation under heavy multi-DIMM configurations, safeguarding data integrity in mission-critical enterprise environments.

Technical Specs & Insights

1. ECC protection detects and corrects single-bit errors in real time, eliminating silent data corruption that could compromise financial ledgers or virtualization hosts.
2. Registered clock drivers buffer control signals across all installed ranks, enabling dense multi-DIMM server configurations without signal degradation or training failures.
3. Dual-rank interleaving with x4 organization keeps each memory channel fully saturated, maximizing data throughput for heavy VM consolidation and database serving.
4. 1600MT/s transfer rate delivers the bandwidth headroom needed by aging yet reliable enterprise platforms, sustaining acceptable application latency during peak workload cycles.
5. CAS 11 cycle latency shortens the critical read command window, improving responsiveness of in-memory caches and real-time analytics on DDR3-era server infrastructure.

Why These Specs Matter

Product SKU M393B1K70EB0-CK0 is an 8GB DDR3-1600 Registered DIMM with ECC, clearly engineered for server-class workloads. In a dense virtualization cluster running dozens of VMs on a hypervisor, a single undetected bit-flip in memory can silently corrupt a guest operating system or a live database transaction. The built-in ECC on this module corrects single-bit errors and detects multi-bit faults autonomously, meaning your multi-tenant environment maintains data integrity around the clock without unexplained crashes—that directly protects revenue and SLAs.

The Registered architecture, driven by an on-DIMM buffer, stabilizes the command and address bus when you populate all memory channels in a 2U rack server. Coupled with dual-rank x4 organization, it delivers balanced interleaving that reduces latency under concurrent access—critical for an in-memory database like Redis or SAP HANA, where thousands of queries per second hit large datasets. At 1.5V and 1600MHz with CL11 timing, the module keeps power budgets predictable while sustaining 12.8 GB/s of bandwidth. For your virtualization farm and real-time analytics, that translates to denser VM consolidation, faster query responses, and fewer IT emergencies in the middle of the night.

Endurance & Reliability

General Virtualization
For moderate-density virtualization hosts, populate at least six to eight of these 8 GB RDIMMs to provide 48–64 GB of RAM per server. Configure balanced memory channels (one DIMM per channel) to maximize bandwidth while leaving room for future expansion, as hypervisors benefit more from capacity than from extreme memory speed.

In-Memory Database
In-memory databases demand both capacity and reliability. Deploy the maximum supported DIMM count—often 12 or 16 modules—to reach 96–128 GB, keeping the dataset entirely in RAM. Populate all memory channels symmetrically with identical dual-rank x4 RDIMMs to sustain low latency under heavy transactional loads and to take full advantage of ECC protection.

High-Performance Computing (HPC)
HPC clusters typically run bandwidth-sensitive workloads, so fill every memory channel with one DIMM per channel using these 1600 MHz registered modules. For dual-socket nodes, install 8–16 identical 8 GB RDIMMs to achieve 64–128 GB, ensuring uniform memory access and peak throughput. Dual-rank modules offer a slight interleaving benefit that can improve effective bandwidth in tightly coupled parallel applications.

Verified Compatibility

Server-grade RDIMM, rigorously validated for Dell PowerEdge R720, HP DL380p Gen8, and compatible servers.

FAQ