| Model | M393B1K70DH0-YKO |
|---|---|
| Product Type | Memory Module |
| Compliance Standards | CE,WEEE,RoHS |
| Memory Capacity | 8 GB |
| Memory Technology | DDR3 |
| Product Voltage | 1.35V |
| RAM Speed | 1600MHz |
| RAM Standard | DDR3-1600/PC3-12800 |
| Error Identifying | ECC |
| Signal Type | Registered |
| Column Access Strobe (CAS) | CL11 |
| Rank | Dual Rank x4 |
| Quantity of Pins | 240-pin |
| RAM Genre | RDIMM |
This Samsung 8GB DDR3L-1600 Registered ECC DIMM (M393B1K70DH0-YKO) is engineered for entry-level and mid-range servers, excelling in virtualization, in-memory databases, and other throughput-sensitive workloads. Its 1.35V low-power design reduces thermal load while the dual-rank x4 organization with ECC ensures high data integrity and efficient memory interleaving for stable, reliable operation under continuous load.
1. ECC memory automatically detects and corrects single-bit errors on the fly, preventing silent data corruption during critical financial or database transactions.
2. Registered signal buffering stabilizes command and address lines, allowing fully populated memory channels without compromising integrity under heavy virtualization loads.
3. Dual Rank x4 organization unlocks interleaved access patterns to maximize sustained bandwidth, accelerating real-time analytics and large in-memory data sets.
4. Low 1.35V operation significantly cuts power draw and cooling overhead across dense rack deployments, directly improving data center energy efficiency.
5. An 8GB capacity per module provides sufficient headroom for consolidating multiple business-critical VMs, making efficient use of every server slot.
The Samsung M393B1K70DH0-YKO is a DDR3 Registered ECC DIMM purpose-built for enterprise servers, and its four defining characteristics directly address the reliability and economic pain points of data center operators. Its ECC protection is vital in virtualized clusters: a single undetected bit flip can corrupt hypervisor memory and crash dozens of guest VMs, but ECC silently corrects these errors to preserve uptime and data consistency. The registered buffer decouples memory chips from the controller, letting you populate high-density banks without signal integrity loss—critical for in-memory databases like Redis or SAP HANA, where every gigabyte must be addressed flawlessly under heavy transactional loads. Operating at just 1.35V instead of the standard 1.5V, this module cuts power consumption by roughly 20% across your fleet, directly shrinking cooling costs and total cost of ownership in large-scale deployments. The dual-rank x4 organization further enhances throughput through rank interleaving, speeding up database query responses during peak demand. For server environments that demand uncompromised uptime, massive memory scalability, and energy efficiency, this RDIMM translates technical specifications into tangible business continuity.
Memory Type Identification: This is an 8GB DDR3-1600 Registered ECC RDIMM (1.35V low voltage). It is designed exclusively for server and workstation platforms, not desktop or laptop systems. The registered ECC feature ensures data integrity for mission-critical workloads.
Capacity Planning Guide
General Virtualization
For a typical hypervisor hosting multiple moderate VMs, equip dual-socket servers with 12–16 modules (96–128 GB) to balance density and cost. Always populate identical DIMMs per channel in symmetric configurations to preserve memory interleaving and maximize bandwidth.
In-Memory Database
In-memory databases demand large, resilient memory footprints. For small to mid-sized instances, install 16–24 identical modules (128–192 GB) across all memory channels, leaving no slot empty. Use 1.35V modules to reduce per-watt thermal output in dense 2U configurations, allowing higher sustained throughput.
High-Performance Computing (HPC)
HPC clusters benefit from low population per channel for higher clock stability. Configure 8–12 modules (64–96 GB) per node, filling only one DIMM per channel to maintain 1600 MT/s speeds. The dual-rank x4 design here aids memory parallelism, while registered buffering keeps signal quality stable under heavy floating-point loads.
Rigorously tested server memory, validated for Dell PowerEdge R720, HP DL380p Gen8, Lenovo RD430.
Q: Can I mix this M393B1K70DH0-YKO with other memory modules of different brands or speeds?
A: Mixing RDIMMs of different brands or speeds is not recommended. Inconsistent timings and ranks may cause POST failures or system instability. For reliable enterprise operation, always populate identical Samsung M393B1K70DH0-YKO modules.
Q: Is this memory compatible with my Intel Xeon E5-2600 v2 server platform?
A: Yes, this DDR3-1600 Registered ECC module is validated for Intel Xeon E5-2600 v2/v3 and E7 platforms supporting 240-pin RDIMMs. Please verify your board’s qualified vendor list for guaranteed compatibility.
Q: What is the recommended DIMM population order for optimal performance?
A: Follow your server motherboard’s memory population guide. Typically, install identical RDIMMs per channel starting with the farthest slot from the CPU. Balance ranks across channels for maximum throughput and interleaving.
Q: Does this module support overclocking or XMP profiles?
A: No. As a JEDEC-compliant registered server module, the M393B1K70DH0-YKO operates strictly at standard DDR3-1600 CL11 timings. Overclocking and XMP are not supported and may compromise data integrity.
Q: What warranty and typical failure rate can I expect?
A: This Samsung module carries a one-year warranty. It delivers enterprise-grade reliability with an extremely low annualized failure rate, backed by rigorous testing and advanced 30nm-class DRAM technology.