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| Model | M393B1G73EB0-YK0Q2 |
|---|---|
| Product Type | Memory Module |
| Compliance Standards | CE,WEEE,RoHS |
| Memory Capacity | 8 GB |
| Memory Technology | DDR3 |
| Product Voltage | 1.35V |
| RAM Speed | 1600MHz |
| RAM Standard | DDR3-1600/PC3-12800 |
| Error Identifying | ECC |
| Signal Type | Registered |
| Column Access Strobe (CAS) | CL11 |
| Rank | Dual Rank x8 |
| Quantity of Pins | 240-pin |
| RAM Genre | RDIMM |
This Samsung M393B1G73EB0-YK0Q2 is a server-grade DDR3L RDIMM, purpose-built for virtualization clusters and in-memory databases where 24/7 data integrity is critical. Its registered signal architecture and ECC error correction ensure stable operation at 1.35V, while the dual-rank x8 configuration and CL11 latency deliver reliable 1600 MT/s throughput for dense multi-CPU platforms.
1. ECC error correction detects and corrects single-bit memory faults in real time, preserving transactional integrity for mission-critical databases and financial applications.
2. Registered signal buffering stabilizes command and address lines across fully populated server channels, essential for maintaining signal integrity in high-density rack deployments.
3. 8GB module capacity offers a balanced density for mid-range virtualization hosts, enabling more simultaneous virtual machines without switching to costlier high-capacity DIMMs.
4. Dual Rank x8 organization interleaves memory banks to sustain higher bandwidth efficiency, reducing latency penalties during concurrent large-scale data analytics workloads.
5. 1600MHz speed delivers ample throughput for DDR3-era server platforms, ensuring responsive performance in legacy enterprise applications that demand predictable memory access patterns.
The Samsung M393B1G73EB0-YK0Q2 is a server-grade Registered ECC DDR3 module built for mission-critical workloads. In virtualization, a single undetected bit flip can silently corrupt data across VMs; ECC corrects these errors instantly, preserving hypervisor stability. The registered buffer reduces electrical load on the memory controller, letting you fully populate dense server boards. For an in-memory database like SAP HANA, this means you can scale capacity without sacrificing signal integrity or risking random faults during peak transactions. The low 1.35V operating voltage slashes power and cooling requirements across racks of modules—directly lowering your datacenter OPEX. Moreover, the dual-rank x8 organization with CL11 timing at 1600MHz boosts effective bandwidth through rank interleaving. In a high-concurrency database cluster, this translates to faster query execution and consistent low latency. This memory keeps your data center running smoothly and securely.
This module is a server-grade 8GB DDR3-1600 Registered ECC DIMM (RDIMM).
General Virtualization
Start with eight modules (64GB) evenly distributed across memory channels to avoid bandwidth contention. A dual-socket server can scale to 128GB using two DIMMs per channel, supporting 20–30 typical VMs with symmetric loading. ECC protection is essential for workload stability.
In-Memory Database
For in-memory platforms (Redis, SAP HANA), maximize capacity by populating every DIMM slot—e.g., 24 x 8GB = 192GB. Install identical Dual Rank x8 modules across all channels to achieve optimal interleaving and low latency. Maintain symmetric populations and keep a cold spare for immediate ECC remediation.
High-Performance Computing (HPC)
Achieve maximum bandwidth with a one DIMM per channel (1DPC) setup, running at full DDR3-1600 CL11. Distribute modules equally across both CPU sockets to avoid NUMA penalties. If more capacity is required, moving to 2DPC is possible but will reduce speed to 1333MHz; always keep channel counts identical to sustain balanced throughput.
Server memory rigorously tested, compatible with Dell PowerEdge R720, HP DL380p Gen8, IBM x3650 M4, etc.
Q: Can I mix this M393B1G73EB0-YK0Q2 with other memory modules of different brands or speeds?
A: Mixing registered ECC modules from different brands or speeds is not recommended for server environments. It may lead to system instability, unbootable states, or corrected errors. Always populate with identical Samsung RDIMMs for validated reliability.
Q: Is this memory compatible with my server platform (Intel Xeon E5-2600 v2 or AMD Opteron 6300 series)?
A: This Samsung DDR3-1600 RDIMM (1.35V, 8GB, 2Rx8, CL11) is designed for dual-socket servers supporting registered ECC memory. Validate via your server’s Qualified Vendor List, but it suits Intel Xeon E5-2600 v1/v2 and AMD Opteron 6300 platforms.
Q: What is the recommended DIMM population order for optimal performance in a server?
A: Populate identical RDIMMs per memory channel, starting with the farthest slot from the CPU. Balance across all channels for maximum bandwidth. For dual-rank modules, fill one DIMM per channel first to maintain 1600 MT/s without downgrades.
Q: Does this module support overclocking or XMP profiles?
A: No. As an enterprise registered ECC memory, it adheres strictly to JEDEC standards for stability and data integrity. Overclocking or XMP is not supported; the module operates only at its rated DDR3-1600 (PC3-12800) specifications.
Q: What warranty and typical failure rate can I expect for this Samsung server memory?
A: This Samsung module comes with a 1-year warranty. Being an original Samsung RDIMM with factory testing, its Annualized Failure Rate is extremely low under specified server conditions, ensuring high data center reliability.