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| Product Type | Memory Module |
|---|---|
| Compliance Standards | |
| Memory Capacity | 8 GB |
| Memory Technology | DDR3 |
| Product Voltage | 1.35 V |
| RAM Speed | 1600 MHz |
| RAM Standard | DDR3-1600/PC3-12800 |
| Error Identifying | ECC |
| Signal Type | Registered |
| Column Access Strobe (CAS) | CL11 |
| Rank | Dual Rank x4 |
| Quantity of Pins | 240-pin |
| RAM Genre | RDIMM |
This 8GB DDR3-1600 Registered ECC RDIMM is purpose-built for server platforms handling virtualization, in-memory databases, and mission-critical applications that demand uncompromising data integrity. Its dual-rank x4 organization paired with 1.35V low-voltage operation delivers balanced throughput and energy efficiency, while registered signaling and ECC protection ensure stable, error-free performance in high-density multi-DIMM configurations.
1. ECC protection corrects single-bit errors in real time, eliminating silent data corruption that could crash transactional databases or compromise financial records in always-on servers.
2. Registered buffering strengthens command and address signals across fully loaded memory channels, making it essential for maintaining stability when scaling to hundreds of gigabytes of RAM in virtualized clusters.
3. Dual Rank x4 organization interleaves internal banks to keep data streams flowing in parallel, maximizing effective bandwidth and ensuring smooth multi‑tenant VM responsiveness during peak consolidation.
4. The 1.35 V low‑voltage design cuts per‑DIMM power consumption at the silicon level, directly reducing cooling demands and energy costs in blade and rack‑dense data centers.
5. 1600 MT/s throughput delivers 12.8 GB/s of channel bandwidth, accelerating in‑memory analytics and cache warm‑up cycles where rapid access to large datasets is critical.
This registered DDR3 module is built for always-on enterprise workloads. In virtualized server farms, a single uncorrected memory error can cascade into multiple guest OS crashes. ECC technology on this Samsung RDIMM instantly corrects those silent bit-flips, safeguarding financial transactions and preventing hypervisor downtime. Meanwhile, the registered buffer decouples the memory bus from heavy electrical loads, enabling you to install high-density RAM (e.g., 192GB+) across all channels without signal integrity loss—crucial for in-memory databases like Redis or SAP HANA where every byte must be instantly accessible and error-free. The 1.35V low-voltage design slashes power consumption by roughly 20% versus standard 1.5V DDR3, dramatically cutting energy and cooling costs in a 24/7 data center. Lastly, the dual-rank x4 configuration supports interleaving, which boosts sustained bandwidth and reduces latency under concurrent workloads such as a VDI host serving hundreds of sessions or real-time analytics queries. The result is not just faster queries; it is the ability to run more virtual machines per host without compromising Service-Level Agreements.
Based on the 8GB DDR3-1600 registered ECC low-voltage RDIMM, capacity planning for server deployments must address three typical workloads.
General Virtualization
Aim for a balance of capacity and power efficiency. Populate two DIMMs per memory channel in a dual-socket server for a total of sixteen 8GB modules (128 GB). This provides sufficient memory for moderate virtual machine density while leveraging the 1.35 V low voltage to reduce operational costs. Always use identical modules to avoid compatibility and performance regressions.
In-Memory Database
Maximize capacity by filling all available DIMM slots. In a typical 24-slot dual-socket server, install twenty-four 8GB RDIMMs to reach 192 GB. This allows large datasets to reside fully in RAM, dramatically lowering transaction latency. Distribute modules equally between sockets to preserve NUMA locality and consistent access times.
High-Performance Computing (HPC)
Memory bandwidth is paramount for HPC. Use a one-DIMM-per-channel configuration with eight 8GB modules (64 GB total) to achieve the highest possible speed and lowest latency. Spread the modules evenly across both processors’ channels. If workload capacity demands more memory, a sixteen-module two-per-channel setup can be adopted, but verify that the platform maintains the full 1600 MT/s rate without downclocking.
DDR3 Registered ECC server memory, rigorously tested, compatible with Dell PowerEdge R720, HP DL380p Gen8, and similar servers.
Q: Can I mix this M393B1K70DH0-YK0 with other memory modules of different brands or speeds?
A: Mixing modules is strongly discouraged. Registered ECC memory requires identical ranks, timings, and organization to maintain signal integrity. Mismatched DIMMs may cause POST failures or data corruption in server environments.
Q: Is this memory compatible with my server?
A: This RDIMM is compatible with Intel Xeon 5500/5600 series or AMD Opteron 4100/4200/6200 platforms using DDR3-1600 Registered ECC. Verify that your motherboard explicitly supports 1.35V low-voltage operation and dual-rank x4 modules.
Q: What is the recommended DIMM population order for optimal performance?
A: Populate identical DIMMs per memory channel, typically filling slots starting with the furthest from the CPU. For dual-processor servers, balance memory evenly across both sockets. Refer to your server's specific population guide for channel interleaving.
Q: Does this module support overclocking or XMP profiles?
A: No. This is a server-grade Registered ECC DIMM designed for absolute stability at JEDEC-specified DDR3-1600 CL11 timings. Overclocking or XMP functionality is not supported and would compromise the error-correction reliability required for enterprise workloads.
Q: What warranty and typical failure rate can I expect?
A: This module includes a one-year warranty. Enterprise-class RDIMMs like this Samsung unit exhibit extremely low failure rates, typically fewer than 0.1% annually, due to rigorous screening and error-correction logic designed for 24/7 operation.