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Samsung M393A1G43DB1-CTD 8GB DDR4 RDIMM 2666MT/s | Server ECC RDIMM

MPN:M393A1G43DB1-CTD By:Samsung Warranty:1 year
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General

Product TypeMemory Module
Memory Capacity8 GB
Memory TechnologyDDR4
Product Voltage1.2V
RAM Speed2666MHz
RAM StandardDDR4-2666/PC4-21300
Error IdentifyingECC
Signal TypeRegistered
Column Access Strobe (CAS)CL19
RankDual Rank x8
Quantity of Pins288-pin
RAM GenreRDIMM

Engineer's Note

This DDR4-2666 RDIMM with ECC and Registered signaling is purpose-built for server platforms running virtualization, in-memory databases, and other latency-sensitive workloads where data integrity is non-negotiable. Its dual-rank x8 organization boosts memory interleaving for improved bandwidth efficiency, while the Registered architecture and 1.2V low-power design maintain reliable signal integrity across high-density configurations.

Technical Specs & Insights

1. ECC error correction actively detects and corrects single-bit memory faults, preserving transactional integrity in financial databases and preventing silent data corruption during continuous operation.
2. Registered signal logic buffers command and address inputs, stabilizing the memory bus to support fully populated multi-DIMM channels in dense virtualization hosts.
3. Dual-rank x8 organization interleaves memory accesses, maximizing channel saturation and delivering consistent throughput for in-memory analytics under concurrent tenant loads.
4. A 2666 MT/s data rate supplies sufficient main memory bandwidth to feed modern multi-core server processors without stalling, ensuring smooth live migration and responsive database queries.
5. An eight-gigabyte capacity per module enables fine-grained memory provisioning, allowing cost-effective scaling of microservice nodes that require moderate memory footprints with reliable performance.

Why These Specs Matter

Based on the Registered signal type, ECC function, and RDIMM format, this M393A1G43DB1-CTD is unmistakably a server-class memory module. Its feature set directly addresses the critical demands of enterprise IT environments where downtime is measured in lost revenue, not just minutes.

In a dense virtualization cluster hosting dozens of virtual machines, silent data corruption is a constant threat. The built-in ECC technology actively detects and corrects single-bit memory errors caused by background radiation, which means your hypervisor and guest operating systems maintain rock-solid data integrity without unexpected crashes. When paired with the Registered buffer, the module isolates the electrical load from the memory controller, allowing you to fully populate all channels with 8GB Dual Rank x8 DIMMs for massive total capacity without sacrificing stability. This dual-rank design itself interleaves memory banks, delivering superior bandwidth for in-memory databases like Redis or SAP HANA, where microsecond latency directly impacts transaction throughput. Meanwhile, the low 1.2V operating voltage reduces thermal load across your rack, lowering cooling costs in a 24/7 datacenter. Running at a true 2666MHz, this DDR4 module provides the raw data rate modern multi-core Xeon processors demand, ensuring your database queries and virtualized workloads never bottleneck waiting for memory.

Endurance & Reliability

General Virtualization
For moderate-density virtualization hosts, populate at least six to eight identical 8 GB RDIMMs across the server’s memory channels to maintain balanced NUMA topology and maximize bandwidth. This configuration comfortably supports 20–30 mixed-duty VMs with room for memory overcommitment, while ECC and register buffering ensure stability under sustained multi-tenant workloads.

In-Memory Database
In-memory databases demand both capacity and low latency; deploy a fully balanced configuration of twelve or more of these 8 GB dual-rank DIMMs to reach 96–192 GB per socket. The dual-rank x8 organization at 2666 MHz delivers high sustained throughput, and Registered ECC protects against data corruption during aggressive table scans and cache updates. Match DIMMs across all populated channels to avoid bottlenecks in parallel data access patterns.

High Performance Computing
HPC nodes benefit from maximum memory bandwidth, so outfit each server with one DIMM per channel—typically eight 8 GB RDIMMs per CPU. The 1.2 V DDR4-2666 specification keeps thermals manageable in dense compute racks, while CL19 latency and dual-rank design offer a solid balance between capacity and access speed for memory-bandwidth-sensitive scientific simulations. For capacity-bound HPC workloads, scale horizontally with identical node configurations rather than mixing DIMM capacities.

Verified Compatibility

Rigorously tested server memory, compatible with Dell PowerEdge R740/R640, HPE ProLiant DL380 Gen10, Lenovo ThinkSystem SR650, and more.

FAQ

Q: Can I mix this M393A1G43DB1-CTD with other memory modules of different brands or speeds?

A: Mixing is not recommended for server environments. Registered ECC modules must match in rank, speed, and organization to maintain memory stability and avoid RAS errors. Always use identical modules.

Q: Is this memory compatible with my Intel or AMD server platform?

A: This DDR4-2666 ECC RDIMM is compatible with Intel Xeon Scalable (Purley) and AMD EPYC 7001/7002 series platforms that support 288-pin Registered DIMMs at 1.2V. Verify your server board’s qualified vendor list.

Q: What is the recommended DIMM population order for optimal performance?

A: For dual-socket servers, populate identical dual-rank modules per channel starting with the first white slot farthest from the CPU. Follow your motherboard’s balanced memory configuration for interleaving and maximum bandwidth.

Q: Does this module support overclocking or XMP profiles?

A: No. This JEDEC-standard RDIMM runs at fixed CL19 latency and 2666MT/s without XMP. Server memory prioritizes reliability over overclocking; any attempt to modify timings may compromise ECC functionality and data integrity.

Q: What warranty and typical failure rate can I expect?

A: This module includes a one-year warranty. As enterprise-grade Samsung DRAM, it has an extremely low annualized failure rate (AFR) when operated within specified thermal and voltage envelopes, ensuring high mission-critical reliability.

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