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Samsung M391B1G73BH0-YH9 8GB DDR3 UDIMM 1333MT/s | Reliable ECC Memory

MPN:M391B1G73BH0-YH9 By:Samsung Warranty:1 year
US$134 - $145
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General

ModelM391B1G73BH0-YH9
Product TypeMemory Module
Compliance StandardsCE,WEEE,RoHS
Memory Capacity8 GB
Memory TechnologyDDR3
Product Voltage1.35V
RAM Speed1333MHz
RAM StandardDDR3-1333/PC3-10600
Error IdentifyingECC
Signal TypeUnbuffered
Column Access Strobe (CAS)CL9
RankDual Rank x8
Quantity of Pins240-pin
RAM GenreUDIMM

Engineer's Note

This Samsung 8GB DDR3L-1333 UDIMM (M391B1G73BH0-YH9) with ECC is an entry-level server and workstation memory module, best suited for small business servers, NAS appliances, and always-on systems where data integrity is critical. Its dual-rank x8 organization improves memory bandwidth and interleaving efficiency, while the 1.35V low-voltage operation reduces power consumption and thermal stress compared to standard 1.5V DDR3, all backed by ECC error correction to prevent single-bit data corruption in long-running workloads.

Technical Specs & Insights

1. ECC protection silently corrects single-bit errors, preventing silent data corruption in financial transactions or database operations that demand absolute integrity.
2. The module's capacity comfortably hosts multiple light virtual machines or containers, maximizing server consolidation density without immediate scale-up costs.
3. Low-voltage operation cuts overall rack power draw and thermal stress, which directly lowers cooling overhead in densely packed server rooms.
4. Dual Rank x8 organization interleaves memory banks to sustain throughput under concurrent access patterns, keeping response times stable when many clients query a web server simultaneously.
5. The base clock speed delivers sufficient sustained bandwidth for file serving and caching workloads, ensuring predictable performance for everyday infrastructure services.

Why These Specs Matter

The Samsung M391B1G73BH0-YH9 is a DDR3L ECC Unbuffered DIMM purpose-built for entry-level servers, workstations, and storage appliances where data integrity is non-negotiable. Its four defining characteristics directly address critical operational pain points. First, ECC silently corrects single-bit errors in real time. In a virtualization cluster hosting multiple client VMs, an uncorrected bit flip can corrupt a virtual disk or trigger cascading kernel panics; ECC ensures your hypervisor and every guest instance remain transactionally solid, preventing revenue-impacting downtime. Second, 1.35V ultra-low voltage operation meaningfully reduces power draw and waste heat. For a memory-caching database server running Memcached or Redis 24/7, this cuts monthly cooling overhead and prolongs component service life, lowering total cost of ownership. Third, the Dual Rank x8 architecture leverages interleaving to sustain higher effective bandwidth. When an in-memory analytics platform streams large datasets, dual rank hides row-to-row access penalties, keeping query throughput consistently high under contention. Finally, the CL9 latency at 1333MHz delivers responsive command execution ideal for latency-sensitive financial transaction logs. Every aspect of this UDIMM translates into hardened, energy-conscious reliability for environments where memory errors are simply not an option.

Endurance & Reliability

General Virtualization
For general virtualization workloads with VMware ESXi or Hyper-V, deploy a minimum of four M391B1G73BH0-YH9 modules per host to deliver 32 GB of total capacity. With 8 GB ECC UDIMMs, you can comfortably host 20–30 light to medium virtual machines, but aim for dual-channel and populate identical DIMMs in pairs to maintain balanced memory bandwidth. Avoid mixing ranks and speeds, and leave one channel per socket free to allow for future expansion if the board supports more than four slots.

In-Memory Database
In-memory databases such as Redis or SAP HANA benefit from the largest possible capacity and error correction. Populate all available DIMM slots with these 8 GB dual-rank x8 UDIMMs to reach the platform maximum—typically 64 GB on mainstream single-socket servers with eight slots. The ECC feature is critical here to prevent silent data corruption. For latency-sensitive workloads, configure memory interleaving and ensure every memory channel is occupied identically to maximize throughput at 1333 MT/s.

High-Performance Computing
HPC clusters running MPI jobs require reliable, dense memory per node. Use six to eight of these low-voltage (1.35 V) UDIMMs per compute node to provide 48–64 GB, which supports large working sets in simulations and data analysis. Always install in symmetric channel populations (two or four modules per socket) to activate interleaving and avoid performance bottlenecks. The dual-rank design improves bandwidth slightly over single-rank alternatives, and the 1.35 V operation reduces thermal load in dense rack environments.

Verified Compatibility

Rigorously validated for server compatibility: fits Dell PowerEdge R210 II, T110 II, HP MicroServer Gen8, and similar platforms.

FAQ

Q: Can I mix this M391B1G73BH0-YH9 with other memory modules of different brands or speeds?

A: Mixing is not recommended. The system will downclock to the slowest module and may disable ECC. For reliable server operation, use identical Samsung M391B1G73BH0-YH9 sticks with same rank, voltage, and timings.

Q: Is this memory compatible with my Intel Xeon E3 or E5 server platform?

A: Yes, it is compatible with Intel Xeon E3/E5 and select AMD Opteron platforms that support DDR3 ECC unbuffered DIMMs. Verify chipset support for 1.35V low-voltage UDIMMs and a maximum 8GB per slot in your board’s QVL.

Q: What is the recommended DIMM population order for optimal performance?

A: Populate identical DIMMs per channel starting with the slot farthest from the CPU. For dual-socket boards, balance memory across both processors. Group dual‑rank modules symmetrically to maintain dual-channel interleaving and ECC effectiveness.

Q: Does this module support overclocking or XMP profiles?

A: No. As an ECC server-grade module, it adheres strictly to JEDEC DDR3-1333 standard at CL9. Overclocking or XMP is not supported; such actions may compromise data integrity and void the warranty.

Q: What warranty and typical failure rate can I expect?

A: This module includes a 1-year warranty. With Samsung’s rigorous testing, the typical annualized failure rate is below 0.5% under normal server workloads, ensuring high reliability for mission-critical applications.

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