General

Engineer's Note

The M393B1K70DH0-YH9-C is a server-class DDR3 Registered DIMM with ECC, explicitly designed for platforms requiring robust data integrity such as virtualization hosts and in-memory databases. Its dual-rank x4 organization and registered signal topology enhance signal stability under heavy load, while 1.35V low-voltage operation and CL9 latency deliver dependable 1333MHz performance with improved energy efficiency.

Technical Specs & Insights

1. ECC protection detects and corrects single-bit errors in real time, safeguarding financial transactions and database integrity in mission-critical server environments.
2. Registered signal buffering stabilizes high-capacity memory channels, allowing dense server configurations to scale up without sacrificing signal integrity under heavy loads.
3. Dual Rank x4 organization interleaves memory banks to boost sustained bandwidth, which accelerates simultaneous query processing in virtualized data centers.
4. 1.35V low-voltage operation trims overall server power draw and cooling demands, directly improving energy efficiency across large-scale cloud deployments.
5. 1333MHz clock speed delivers ample throughput for legacy enterprise applications, ensuring reliable platform performance during cost-effective server refreshes.

Why These Specs Matter

When you rely on a dense virtualization cluster or an in-memory database, every bit of data integrity and every watt of power matters. The Samsung M393B1K70DH0-YH9-C, an 8GB DDR3-1333 Registered DIMM, is purpose‑built for these demanding server environments. Its ECC technology actively detects and corrects single‑bit errors—a non‑negotiable safeguard when cosmic radiation can flip a bit and silently corrupt a financial transaction or hypervisor table. The registered signal buffer stabilizes the command bus as you populate all 24 slots in a 2U server, preventing signal degradation that would otherwise cause random reboots under heavy virtualization loads. With dual‑rank x4 organization and CL9 latency, it efficiently interleaves data across ranks, boosting effective bandwidth for Redis or Memcached workloads where microseconds determine user experience. Finally, the 1.35V low-voltage design reduces thermal dissipation in dense racks: lower power draw means higher rack density, reduced cooling costs, and a longer lifespan for the memory and its neighboring components. For IT architects balancing performance, reliability, and total cost of ownership, this RDIMM translates directly to higher uptime and lower operational expense in always‑on enterprise applications.

Endurance & Reliability

General Virtualization
This 8GB DDR3-1333 RDIMM is suited for moderate-density virtualization hosts. Install six to twelve modules per server to achieve 48–96 GB of balanced capacity for a mix of light to medium VMs. Always populate identical DIMMs in symmetrical channels to maintain memory interleaving and maximize throughput.

In-Memory Database
For in-memory databases, prioritize capacity and reliability by fully populating all available slots, aiming for 128 GB or more across 16 modules. The ECC registered design protects data integrity under heavy write loads, and dual-rank x4 organization on each DIMM enhances command rate efficiency for large data sets.

High Performance Computing
HPC clusters benefit from distributed memory bandwidth rather than per-node depth. Configure each node with 4 or 8 identical 8GB RDIMMs to gain dual- or quad-channel parallelism while keeping per-core memory allocation ample. The low 1.35V operation reduces thermal strain in dense rack deployments, helping sustain clock stability during long-running parallel jobs.

Verified Compatibility

Strictly tested server memory, compatible with Dell PowerEdge R620/R720, HP DL380p Gen8, Cisco UCS B200 M3.

FAQ