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Samsung M391B1G73QH0-YK0Q 8GB DDR3 UDIMM 1600MT/s | Reliable ECC RAM

MPN:M391B1G73QH0-YK0Q By:Samsung Warranty:1 year
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General

ModelM391B1G73QH0-YK0Q
Compliance StandardsEU RoHS,FCC
Product TypeMemory Module
Memory Capacity8 GB
Memory TechnologyDDR3
Product Voltage1.35V
RAM Speed1600MHz
RAM StandardDDR3-1600/PC3-12800
Error IdentifyingECC
Signal TypeUnbuffered
Column Access Strobe (CAS)CL11
RankDual Rank x8
Quantity of Pins240-pin
RAM GenreUDIMM

Engineer's Note

This UDIMM with ECC and a dual-rank x8 organization is a server/workstation memory module best suited for single-socket platforms handling data-critical workloads such as virtualization, small database servers, or professional content creation where reliability is paramount. Its 1.35V low-voltage operation reduces power consumption and thermal stress, while unbuffered signaling combined with ECC error correction and dual-rank interleaving delivers responsive latency and robust data integrity under continuous operation.

Technical Specs & Insights

1. ECC protection silently corrects single-bit memory errors, preserving data integrity for small business databases and critical file services running around the clock.
2. Low-voltage operation significantly cuts power draw at the rack level, helping to shrink cooling costs and extend hardware lifespan in always-on server deployments.
3. Dual rank organization enables rank interleaving that improves command throughput, delivering more consistent performance under mixed virtual machine loads.
4. Unbuffered signal topology strips away buffer latency, giving single-socket server workloads like DNS and lightweight web hosting a tangible responsiveness lift.
5. Fast DDR3 speed feeds data-hungry processes with enough throughput to keep a modest server CPU busy, preventing memory bottlenecks during peak access periods.

Why These Specs Matter

The M391B1G73QH0-YK0Q is an 8GB DDR3 Unbuffered ECC UDIMM purpose-built for entry-level servers and workstations. Its four defining characteristics—Error Correction Code, 1.35V operation, 1600MHz CL11, and Dual Rank x8 architecture—translate directly into real-world reliability where it matters most. In a virtualized host running multiple VMs, a single undetected bit flip can silently corrupt a database or bring down an entire guest machine. ECC eliminates that risk by automatically detecting and correcting single-bit errors, ensuring continuous data integrity around the clock. The 1.35V low-voltage design substantially reduces power draw and waste heat compared to standard 1.5V modules, which slashes cooling demands in dense server clusters or fanless NAS appliances that must sustain 24/7 operation without thermal throttling. Meanwhile, the Dual Rank x8 configuration enables rank interleaving to boost effective bandwidth, accelerating memory-intensive workloads like ZFS checksum calculations or Redis in-memory caching where every cycle counts. Although this module is unbuffered, it brings enterprise-grade protection against silent data corruption to cost-sensitive builds. For small businesses deploying file servers, light virtualization, or archival storage, it means fewer outages, preserved data accuracy, and a markedly more energy-efficient infrastructure.

Endurance & Reliability

General Virtualization
For a hypervisor hosting multiple VMs, deploy at least four of these 8 GB UDIMMs to accumulate 32 GB, which comfortably supports a dozen light-to-medium guests. Enable memory interleaving in the BIOS and configure no memory overcommit to preserve ECC protection, ensuring data integrity across virtualized workloads.

In-Memory Database
Populate all four DIMM slots with these dual-rank modules to reach the maximum 32 GB capacity on a typical single-socket UDIMM platform. The dual-rank x8 organization improves rank interleaving, boosting throughput under heavy Redis or Memcached loads, while ECC guards against silent data corruption.

High-Performance Computing
Install a matched quad-channel set (four identical 8 GB UDIMMs) to fully utilize the memory bandwidth available on Xeon E3 or similar platforms. The 1600 MHz CL11 timing, combined with dual-rank signaling, delivers low-latency access critical for MPI-based simulations, and the 1.35 V operation reduces thermal buildup in dense compute nodes.

Verified Compatibility

Rigorously tested compatible servers: Dell R220, HP ML310e Gen8, Lenovo TS140.

FAQ

Q: Can I mix this M391B1G73QH0-YK0Q with other memory modules of different brands or speeds?

A: Mixing is not recommended for server environments. Mismatched modules can cause stability issues, ECC errors, or prevent system boot. For guaranteed reliability, use identical Samsung modules, particularly in multi-channel and mission-critical configurations.

Q: Is this memory compatible with my Intel or AMD server platform?

A: This module is compatible with servers supporting DDR3-1600/PC3-12800, 240-pin ECC Unbuffered DIMMs at 1.35V or 1.5V. It works with select Intel Xeon E3 series and AMD Opteron 3000 series platforms. Always verify your motherboard’s Qualified Vendor List.

Q: What is the recommended DIMM population order for optimal performance?

A: Refer to your server board manual. Typically, populate identical modules starting with the slots farthest from the CPU per memory channel, balancing capacity across channels. Maintain matched pairs for dual-channel mode to maximize throughput.

Q: Does this module support overclocking or XMP profiles?

A: No. As a server-grade ECC UDIMM, it adheres to JEDEC standard DDR3-1600/PC3-12800 at CAS 11. It does not include XMP profiles nor is it designed for overclocking, prioritizing data integrity and long-term reliability over frequency tuning.

Q: What warranty and typical failure rate can I expect?

A: This module comes with a one-year warranty. Samsung server memory exhibits very low annualized failure rates. Actual reliability depends on proper cooling and within-spec operation. This module is built for 24/7 workloads under normal server conditions.

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