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Samsung M390B5273DH0-YH9 4GB DDR3 DIMM 1600MT/s | Registered ECC

MPN:M390B5273DH0-YH9 By:Samsung Warranty:1 year
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General

ModelM390B5273DH0-YH9
Product TypeMemory Module
Compliance StandardsEU RoHS,FCC
Memory Capacity4 GB
Memory TechnologyDDR3
Product Voltage1.35V
RAM Speed1600MHz
RAM StandardDDR3-1333/PC3-10600
Error IdentifyingECC
Signal TypeUnbuffered
Column Access Strobe (CAS)CL9
RankDual Rank
Quantity of Pins240-pin
RAM GenreDIMM

Engineer's Note

This DDR3 unbuffered ECC DIMM is designed for entry-level servers and workstations where data integrity is paramount, leveraging error-correcting code to detect and correct single-bit memory errors. Operating at a low 1.35V with a dual-rank configuration and a CAS latency of 9, it balances improved power efficiency and signal stability for reliable 1600 MHz performance.

Technical Specs & Insights

1. Error-correcting code detection silently corrects single-bit memory faults, preserving data integrity for critical database transactions and long-running server workloads.
2. Unbuffered signaling eliminates register delays, delivering lower latency ideal for microservices and edge servers where response time directly impacts service quality.
3. Dual rank organization interleaves access across two internal chip groups, keeping the memory channel saturated to sustain throughput during heavy virtualization consolidation.
4. Low-voltage operation curbs power draw and waste heat, enabling denser rack deployments while reducing active cooling demands in always-on data centers.
5. Fast clocked transfer rate raises bandwidth well above baseline DDR3 modules, cutting CPU idle cycles for in-memory analytics and other memory-intensive enterprise tasks.

Why These Specs Matter

When powering mission-critical workloads such as virtualization clusters and in-memory databases, the M390B5273DH0-YH9 memory module transforms reliability and efficiency from ideals into operational realities. Its integrated Error Correcting Code (ECC) actively detects and corrects single-bit errors, preventing silent data corruption that could crash hypervisors or corrupt financial transactions in an in-memory database. This is not just about uptime—it’s about trust in every computation. The module’s Dual Rank architecture increases bank-level parallelism, boosting memory bandwidth so that multiple virtual machines and latency-sensitive applications like Redis or Memcached can access data concurrently without bottlenecks. Operating at 1.35V low voltage, it draws significantly less power than standard DDR3, which directly lowers electricity and cooling costs in dense server farms where every watt matters. As an Unbuffered DIMM, it provides a cost-effective path to ECC protection for single-socket servers and microservers, delivering enterprise data integrity without the higher expense of registered memory. Together, these attributes ensure that your infrastructure remains stable, responsive, and economically sustainable—whether you are scaling a private cloud or accelerating real-time analytics.

Endurance & Reliability

General Virtualization
For basic virtualization hosts running several light VMs, populate two identical M390B5273DH0-YH9 modules (2×4 GB) in dual-channel mode for 8 GB total with ECC protection. Scale to four modules (4×4 GB) for 16 GB when hosting more VMs or memory-overcommit scenarios; always match ranks and timings across channels to maintain stable error correction and predictable latency.

In-Memory Database
In-memory databases demand both capacity and data integrity. Fill all available DIMM slots with these 4 GB ECC UDIMMs—typically six or eight modules on a single-socket board—to reach 24–32 GB. Dual-rank DIMMs help sustain command rate and throughput under heavy random access, while ECC guards against bit flips in critical dataset operations.

High-Performance Computing
HPC workloads favor high bandwidth and low latency. Configure pairs of these dual-rank 1600 MHz modules in dual- or triple-channel setups (e.g., 4×4 GB or 6×4 GB) to maximize memory bandwidth per core. The 1.35 V low-voltage operation reduces thermal load in dense compute nodes, and unbuffered ECC minimizes access latency—acceptable for scale-out clusters that tolerate occasional uncorrected errors at node level rather than requiring full registered memory resilience.

Verified Compatibility

Rigorously tested. Verified compatible with servers: Dell PowerEdge T110 II, R210 II, HP ProLiant ML110 G7, Lenovo ThinkServer TS140.

FAQ

Q: Can I mix this M390B5273DH0-YH9 with other memory modules of different brands or speeds?

A: Not recommended for server environments. Mixing different brands or speeds often causes signal integrity issues and ECC errors, leading to system instability. For guaranteed reliability, always use identical modules from the same OEM and validated batch.

Q: Is this memory compatible with my system?

A: This DDR3 ECC Unbuffered DIMM targets Intel Xeon E3/E5 platforms or AMD equivalent servers requiring low-voltage 1.35V support. Verify your motherboard supports 4GB dual-rank PC3-10600 modules and consult the system's Qualified Vendor List.

Q: What is the recommended DIMM population order for optimal performance?

A: Populate the first slot of each memory channel per CPU to enable interleaving and balanced access. For dual-processor boards, install identical DIMMs symmetrically across both CPU banks, following the manufacturer's numbering sequence strictly.

Q: Does this module support overclocking or XMP profiles?

A: No. As a server-grade ECC UDIMM, it adheres strictly to JEDEC standard DDR3-1333/PC3-10600 timings. Overclocking and XMP profiles are disabled to preserve data integrity and long-term stability in mission-critical applications.

Q: What warranty and typical failure rate can I expect?

A: This module includes a one-year warranty. Engineered by Samsung with industry-leading components, typical AFR remains below 0.5% in controlled environments. Full RoHS and FCC compliance further assures reliable, environmentally responsible operation.

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