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Samsung M392B5670GB0-CH9 2GB DDR3 RDIMM 1333MHz | Reliable ECC Memory

MPN:M392B5670GB0-CH9 By:Samsung Warranty:1 year
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General

ModelM392B5670GB0-CH9
Product TypeMemory Module
Compliance StandardsEU RoHS,FCC
Memory Capacity2 GB
Memory TechnologyDDR3
Product Voltage1.5V
RAM Speed1333MHz
RAM StandardDDR3-1333/PC3-10600
Error IdentifyingECC
Signal TypeRegistered
Column Access Strobe (CAS)CL9
RankSingle Rank x4
Quantity of Pins240-pin
RAM GenreVLP RDIMM

Engineer's Note

The M392B5670GB0-CH9 is a DDR3-1333 server memory module in a VLP RDIMM form factor with ECC and registered signaling, purpose-built for virtualization clusters, in-memory databases, and dense rack deployments where data integrity and signal stability are critical. Its single-rank x4 organization reduces bus loading per channel, enabling higher population density at 1333MHz while the CL9 latency and ECC engine minimize both access delays and silent data corruption.

Technical Specs & Insights

1. ECC protection detects and corrects single-bit errors in real time, preserving transactional data integrity that financial databases and virtualization hosts rely on to prevent silent corruption.
2. Registered buffer chips decouple the memory controller from DRAM loading, sustaining signal stability across fully populated server channels even under mixed-DIMM configurations.
3. The Very Low Profile form factor slashes module height, unlocking superior airflow and cooler operation inside dense 1U rack servers and blade enclosures where every millimeter matters.
4. 1333 MHz clock speed translates to a steady 10.6 GB/s peak bandwidth per channel, delivering predictable throughput for virtual machines running steady-state enterprise workloads without excessive power draw.
5. CL9 latency tightens the gap between a read command and data delivery, sharpening query response in caching layers and online transaction processing where microsecond delays accumulate.

Why These Specs Matter

The M392B5670GB0-CH9 is a server-grade VLP RDIMM engineered for reliability in dense data centers. Its ECC protection prevents silent data corruption, which is catastrophic in virtualized clusters: a single bit error in hypervisor memory can crash multiple guest VMs, but ECC corrects it automatically, safeguarding uptime. The registered buffer re-drives command and address signals cleanly, enabling stable operation when populating high-capacity memory for in-memory databases like SAP HANA—without it, signal degradation leads to crashes under heavy transactional loads. The very low profile design is crucial in 1U rack servers and blade nodes, allowing better airflow between modules to avoid thermal throttling during sustained analytics. The single-rank x4 configuration enhances error coverage because x4 DRAM devices permit more detailed ECC and a single rank reduces bus loading, delivering the low-latency access that real-time database queries require. For your virtualized infrastructure and memory-intensive applications, these features combine to guarantee data integrity, scalable capacity, and cooling efficiency.

Endurance & Reliability

General Virtualization
Populate all memory channels symmetrically with these 2 GB VLP RDIMMs to ensure consistent latency across virtual machines. In a typical dual-processor server offering 12 DIMM slots, installing one module per channel delivers 24 GB of ECC-protected capacity—sufficient for a moderate number of lightweight guests. The registered ECC safeguards VM state, while the very low-profile design preserves airflow in dense racks.

In-Memory Database
In-memory engines demand the largest error-free pool you can assemble. Although each DIMM holds only 2 GB, populating a 24-slot system in a balanced one-DIMM-per-channel arrangement yields 48 GB, forming a reliable cache layer or a small dataset store. Registered ECC eliminates silent data corruption, and the single-rank x4 organization keeps electrical load low, allowing maximum slot utilization without signal degradation.

High-Performance Computing
For HPC nodes, target one identical 2 GB RDIMM per memory channel to enable channel interleaving and extract maximum bandwidth from the DDR3-1333 interface. A dual-socket blade with eight channels provides 16 GB of total memory, well-suited for communication-heavy parallel tasks that prioritize throughput over capacity. The VLP form factor reduces impedance to front-to-back cooling, improving thermal stability in densely packed compute sleds.

Verified Compatibility

Server-grade DDR3 RDIMM, rigorously tested and compatible with Dell R710/R720, HP DL380 G7, IBM x3650 M3.

FAQ

Q: Can I mix this M392B5670GB0-CH9 with other memory modules of different brands or speeds?

A: Mixing is not recommended for server environments. The module requires Registered ECC DDR3-1333 at 1.5V. Mixing speeds or brands may cause POST failures, signal integrity issues, or operational instability under enterprise workloads.

Q: Is this memory compatible with my system?

A: This is a VLP RDIMM for servers with Intel Xeon 5500/5600 series or AMD Opteron 6100/6200 platforms. Verify your motherboard supports DDR3-1333 Registered ECC, 240-pin, and 2GB single-rank modules before purchase.

Q: What is the recommended DIMM population order for optimal performance?

A: Populate identical RDIMMs per memory channel starting with the farthest slot from the CPU, typically slot A1, B1, C1 for triple-channel Xeon systems. Follow your server’s manual to balance channels and maintain single-rank per channel.

Q: Does this module support overclocking or XMP profiles?

A: No. Server-grade Registered ECC DIMMs like this M392B5670GB0-CH9 are built for stability and data integrity at JEDEC standard DDR3-1333 CL9. Overclocking or XMP is not supported and would compromise error correction.

Q: What warranty and typical failure rate can I expect?

A: We provide a one-year warranty covering manufacturing defects. The typical AFR (Annualized Failure Rate) for this Samsung VLP RDIMM is under 0.5%, reflecting robust enterprise-grade reliability under 1.5V operation.

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