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| Product Type | Memory Module |
|---|---|
| Memory Capacity | 64 GB |
| Memory Technology | DDR4 |
| Product Voltage | 1.2 V |
| RAM Speed | 3200 MHz |
| RAM Standard | DDR4-3200/PC4-25600 |
| Error Identifying | ECC |
| Signal Type | Registered |
| Column Access Strobe (CAS) | CL22 |
| Rank | Dual Rank x4 |
| Quantity of Pins | 288-pin |
| RAM Genre | RDIMM |
Designed for enterprise servers and data centers, this Samsung M393A8G40AB2-CWE 64GB DDR4-3200 RDIMM with ECC ensures data integrity in memory-intensive workloads such as virtualization and in-memory databases. Its dual-rank x4 organization and registered signaling enhance signal stability and channel density, reliably scaling capacity in 1.2V, 288-pin platforms operating at CL22 with PC4-25600 bandwidth.
1. ECC protection silently corrects single-bit memory errors in real time, preserving data integrity for transactional databases and preventing costly silent data corruption in always-on enterprise servers.
2. Registered clock drivers buffer command and address signals, stabilizing massive memory populations so hyperscale virtualization hosts can reliably scale to multi-terabyte footprints without signal degradation.
3. Dual-rank organization interleaves access across internal banks, keeping server memory channels fully utilized under heavy simultaneous VM workloads and reducing access latency under contention.
4. High-density module capacity allows dense virtual machine consolidation per node, directly boosting guest density without sacrificing memory headroom for in-memory caching and large database instances.
5. High-speed data rate feeds modern multi-core server processors with the sustained bandwidth needed to saturate fast network pipelines and accelerate real-time analytics processing.
The Samsung M393A8G40AB2-CWE is a 64GB DDR4-3200 RDIMM engineered for servers where data integrity and capacity scaling are non-negotiable. Its ECC technology actively detects and corrects single-bit errors, shielding your in-memory databases like SAP HANA or Redis from the silent bit flips that could otherwise corrupt financial transactions or cached user sessions. The registered buffer stabilizes signals even when all memory channels are fully populated, enabling you to scale a single machine to terabytes of RAM without compromising stability—critical for dense virtualization clusters where dozens of VMs share physical resources. Meanwhile, the Dual Rank x4 configuration increases bank-level parallelism, boosting bandwidth and lowering latency for random-access workloads, so your virtual machines and database queries execute faster. Operating at a low 1.2V, it also contributes to meaningful power savings across an entire server fleet. In your data center, this module translates directly to fortified data fidelity, higher VM density, and consistent throughput under continuous load.
General Virtualization
Deploy multiple 64GB DDR4-3200 RDIMMs to maximize memory density per server while maintaining balanced channel population. For a dual-socket platform with eight memory channels per CPU, install one DIMM per channel (8 modules total) to achieve 512 GB of capacity at full 3200 MT/s speed. If higher consolidation ratios are needed, scale to two DIMMs per channel (16 modules, 1 TB), accepting a slight frequency drop to 2933 MT/s depending on the platform, and ensure identical modules across all populated slots.
In-Memory Database
Fill all available memory channels with 64 GB RDIMMs to deliver the largest possible memory footprint, reaching 2 TB or more on two‑socket servers with 16 DIMMs per CPU. Use one DIMM per channel where possible to preserve 3200 MT/s bandwidth, which benefits low‑latency transactional workloads. When absolute capacity outweighs raw speed, a balanced two‑DIMM‑per‑channel configuration still provides excellent reliability with ECC and registered signaling.
High-Performance Computing
Populate one 64 GB RDIMM per memory channel to sustain peak memory bandwidth of DDR4‑3200, critical for throughput‑sensitive HPC simulations. Typical deployments use 8 or 16 modules across dual‑socket nodes, giving 512 GB or 1 TB while keeping all channels active and symmetric. Dual‑rank x4 modules offer good rank interleaving without overloading the memory bus, and registered ECC ensures data integrity during long‑running parallel jobs.
Rigorously tested for server compatibility: Dell PowerEdge R750, HPE ProLiant DL380 Gen10 Plus, Lenovo ThinkSystem SR650 V2.
Q: Can I mix this M393A8G40AB2-CWE with other memory modules of different brands or speeds?
A: We strongly advise against mixing this RDIMM with different brands or speeds. Mismatched modules can cause severe stability issues, system errors, and may void your warranty. Always use identical modules for server environments.
Q: Is this memory compatible with my system?
A: This is a DDR4-3200 ECC Registered DIMM, designed for Intel Xeon Scalable and AMD EPYC platforms. It requires a server motherboard with 288-pin RDIMM slots. Please confirm your CPU and board explicitly support 64GB 2Rx4 RDIMMs.
Q: What is the recommended DIMM population order for optimal performance?
A: For dual-socket servers, populate identical DIMMs per channel starting with the farthest slot from the CPU. Refer to your motherboard's manual for specific memory channel configurations to maintain balanced interleaving and maximize throughput.
Q: Does this module support overclocking or XMP profiles?
A: No, this registered ECC server memory does not support overclocking or XMP. It runs strictly at the JEDEC standard DDR4-3200 to guarantee data integrity and 24/7 stability, which is critical for enterprise workloads.
Q: What warranty and typical failure rate can I expect?
A: This Samsung module includes a one-year warranty. ECC RDIMMs are built with premium components and rigorous validation, resulting in a very low annualized failure rate, typically below 0.5% in proper operating conditions.