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| Model | M393B1G73EB0-YK0 |
|---|---|
| Compliance Standards | EU RoHS,FCC |
| Product Type | Memory Module |
| Memory Capacity | 8 GB |
| Memory Technology | DDR3 |
| Product Voltage | 1.35V |
| RAM Speed | 1600MHz |
| RAM Standard | DDR3-1600/PC3-12800 |
| Error Identifying | ECC |
| Signal Type | Registered |
| Column Access Strobe (CAS) | CL11 |
| Rank | Dual Rank x8 |
| Quantity of Pins | 240-pin |
| RAM Genre | RDIMM |
Designed for server platforms, this Samsung M393B1G73EB0-YK0 is an 8GB DDR3-1600 Registered DIMM with ECC, making it ideally suited for virtualization, in-memory databases, and other data-integrity-critical workloads that require stable 24/7 operation. Its dual-rank x8 configuration and 1.35V low-voltage operation reduce electrical loading and power consumption per channel, while the registered signal type and CL11 latency ensure consistent performance in densely populated multi-DIMM server environments.
1. ECC protection silently corrects single-bit errors, preserving data integrity for mission-critical enterprise workloads and financial transactions.
2. Registered signal buffering stabilizes high-capacity memory configurations, essential for servers supporting large-scale virtualization and in-memory databases.
3. Dual Rank x8 organization enables rank interleaving, boosting effective memory bandwidth and sustaining smooth performance under heavy multi-tenant VM loads.
4. Low 1.35V operation reduces power consumption and thermal stress, lowering data center cooling costs and improving energy efficiency in dense rack deployments.
5. 1600MHz frequency delivers solid throughput for DDR3-era server platforms, balancing speed and latency for consistent response times in legacy enterprise applications.
The M393B1G73EB0-YK0 is an 8GB DDR3 Registered ECC DIMM built for server stability. Four standout features directly address real-world datacenter challenges. ECC corrects single-bit errors automatically, safeguarding in-memory databases like Redis from data corruption that could crash a transaction service or silently alter records. Registered buffering enables high-density memory configurations—a virtualized host running dozens of VMs can reach 128GB without signal degradation, eliminating random kernel panics caused by electrical noise. The 1.35V low-voltage design slashes power draw and thermal output, which translates into lower cooling costs in dense racks. Dual-rank x8 organization combined with 1600MHz speed increases memory-level parallelism; this ensures that SAP HANA analytical queries receive low-latency access under heavy concurrency, preventing report deadlines from slipping. For IT managers overseeing virtualization clusters or real-time databases, this module delivers a blend of reliability, efficiency, and sustained throughput that non-ECC desktop memory simply cannot match.
Capacity Planning Guide for Server Memory (DDR3-1600 ECC RDIMM)
This Samsung M393B1G73EB0-YK0 is an 8GB DDR3-1600 registered ECC module operating at 1.35V. It is designed exclusively for server platforms that require data integrity and large memory footprints. Capacity planning should prioritize population balance and memory channel utilization.
General Virtualization
For consolidated workloads, install six or twelve identical 8GB modules (48GB or 96GB total) across triple-channel or quad-channel memory controllers. Populate one DIMM per channel to maximize bandwidth while leaving slots free for scale-out. This configuration comfortably supports 15–25 typical VMs without oversubscribing memory.
In-Memory Database
Latency-sensitive datasets demand the largest possible capacity within a single node. Equip all available slots with 8GB modules—commonly 12 or 24 DIMMs for 96GB or 192GB total—operating at the rated CL11. Ensure identical rank and speed across every channel to avoid performance penalties on synchronous memory access patterns.
High-Performance Computing (HPC)
Balance capacity with sustained throughput by filling all memory channels symmetrically. For dual-socket servers, install eight or sixteen 8GB modules (64GB or 128GB per CPU) in a 4-channel population. Use dual-rank RDIMMs to exploit rank interleaving, improving effective bandwidth under floating-point intensive parallel workloads.
Rigorously validated DDR3 ECC Registered DIMM for Dell PowerEdge R720, HPE ProLiant DL380p Gen8, and similar servers.
Q: Can I mix this M393B1G73EB0-YK0 with other memory modules of different brands or speeds?
A: Mixing brands or speeds in server RDIMM configurations is highly discouraged. All installed modules must match DDR3-1600, CL11, 1.35V, dual-rank x8, ECC Registered specifications to maintain stability and avoid POST failures.
Q: Is this memory compatible with my system?
A: This RDIMM fits servers with Intel Xeon E5-2400/2600 v1/v2 or AMD Opteron 6300 series platforms. Verify your motherboard supports 1.35V DDR3 ECC Registered memory and consult the system’s qualified vendor list for this exact part.
Q: What is the recommended DIMM population order for optimal performance?
A: Populate identical dual-rank RDIMMs per channel, beginning with the slot farthest from the CPU. Balance total capacity across all memory channels and avoid mixing different ranks to maximize interleaving and memory bandwidth.
Q: Does this module support overclocking or XMP profiles?
A: No. As a server-class ECC Registered DIMM, it adheres strictly to JEDEC DDR3-1600 at 1.35V. Overclocking and XMP are unsupported; the module is engineered for maximum data integrity and 24/7 operational stability.
Q: What warranty and typical failure rate can I expect?
A: This Samsung module includes a 1-year warranty. Built to enterprise standards, such RDIMMs typically demonstrate an annual failure rate well below 0.5%, delivering highly reliable performance in always-on server environments.