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Samsung M393B1K70CHD-CF8 8GB DDR3 RDIMM 1066MHz | Reliable ECC Memory

MPN:M393B1K70CHD-CF8 By:Samsung Warranty:1 year
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General

ModelM393B1K70CHD-CF8
Product TypeMemory Module
Compliance StandardsEU RoHS,FCC
Memory Capacity8 GB
Memory TechnologyDDR3
Product Voltage1.5V
RAM Speed1066MHz
RAM StandardDDR3-1066/PC3-8500
Error IdentifyingECC
Signal TypeRegistered
Column Access Strobe (CAS)CL7
RankDual Rank x4
Quantity of Pins240-pin
RAM GenreRDIMM

Engineer's Note

This 8GB DDR3-1066 Registered ECC RDIMM (PC3-8500, 1.5V) with a Dual Rank x4 organization is purpose-built for legacy enterprise servers and workstations, excelling in virtualization, in-memory databases, and other mission-critical workloads where data integrity is non-negotiable. The registered buffer stabilizes high-density memory channels while ECC corrects single-bit errors on the fly, and its aggressive CAS latency of 7 cycles combined with dual-rank interleaving reduces access latency for consistent throughput under heavy, concurrent memory access.

Technical Specs & Insights

1. A registered buffer minimizes electrical loading on the memory controller, enabling fully populated server boards to sustain rock-solid signal integrity and non-stop stability under 24/7 operation.
2. ECC technology provides real-time single-bit error correction and multi-bit detection, eliminating silent data corruption risks for virtualized databases and critical financial workloads.
3. Dual rank x4 interleaving keeps both memory channels saturated with concurrent access streams, ensuring predictable bandwidth delivery for high-density VM consolidation in hyper-converged environments.
4. The aggressively tuned CAS latency shortens the time-to-first-word gap, directly accelerating the query performance of latency-sensitive enterprise applications like in-memory analytics.
5. JEDEC-standard base frequency assures drop-in interoperability across diverse legacy DDR3 server fleets, simplifying sparing strategies and phased infrastructure refreshes without compatibility hurdles.

Why These Specs Matter

The Samsung M393B1K70CHD-CF8 is a server-class registered DDR3 DIMM engineered to neutralize four persistent data-center threats, making it a direct answer to the reliability and scalability demands of virtualized infrastructure and in-memory database engines. Its ECC protection actively corrects single-bit errors caused by electrical noise or cosmic radiation, preventing silent data corruption that could crash a hypervisor or distort transactional records in a multi-tenant cloud cluster—your uptime truly stays intact. The registered buffer stage maintains clean command signals when every channel is densely populated, letting an SAP HANA appliance scale memory without intermittent training failures or boot hangs. A dual-rank x4 organization interleaves operations across internal banks to double effective command throughput; during a Redis onslaught of millions of key lookups, this design shrinks tail latency and keeps real-time dashboards responsive under burst pressure. Finally, the 1066MHz frequency with a tight CL7 latency delivers a predictable, low-latency path that eliminates memory bottlenecks in mixed-workload virtual machines. Together, these characteristics transform a standard DIMM into a fault‑resilient, signal‑stable, and latency‑lean performance anchor for mission‑critical services.

Endurance & Reliability

General Virtualization
For a balanced virtualized host, install six or eight identical M393B1K70CHD-CF8 modules to populate one or two memory channels per CPU, delivering 48 GB to 64 GB total. This registered ECC configuration ensures stable multi-VM density while keeping DIMM slots free for future scaling. Pair modules in matched sets to maintain memory interleaving and avoid performance penalties under moderate overcommitment.

In-Memory Database
Maximize capacity and reliability by fully populating all channels with these 8 GB dual-rank RDIMMs, aiming for at least 128 GB across the system. The combination of ECC and registered signaling protects data integrity during large in-memory dataset loads, while the 1.5 V operating voltage helps control thermals in 24/7 database nodes. Plan for identical part numbers across all sockets to guarantee consistent rank and timing behavior.

High-Performance Computing
Achieve high bandwidth per core by installing one module per channel across all available memory channels, typically eight or sixteen sticks for a dual-socket node. The DDR3-1066 speed and CL7 latency offer predictable access patterns that suit throughput-sensitive HPC workloads, though you should weigh total core count against memory bandwidth to avoid saturation. Use homogeneous quad-channel or six-channel groupings to sustain balanced memory performance during large-scale parallel jobs.

Verified Compatibility

Proven compatible with servers like Dell PowerEdge R710, HP ProLiant DL380 G7, and Lenovo ThinkServer RD630 after rigorous testing.

FAQ

Q: Can I mix this M393B1K70CHD-CF8 with other memory modules of different brands or speeds?

A: Mixing registered ECC modules of different brands or speeds is not recommended. The system will downclock to the slowest DIMM and may encounter stability issues; always use identical modules for validated server configurations.

Q: Is this memory compatible with my system?

A: This DDR3-1066 RDIMM is designed for servers based on Intel Xeon 5500/5600 series or AMD Opteron platforms that require 1.5V registered ECC memory. Please verify your server board's qualified vendor list.

Q: What is the recommended DIMM population order for optimal performance?

A: Populate identical DIMMs per channel starting with the slots farthest from the CPU, typically blue or black connectors first. Balance capacity across both CPU memory controllers in dual-socket servers to maximize bandwidth.

Q: Does this module support overclocking or XMP profiles?

A: No. As an enterprise-grade DDR3 registered ECC module, it operates strictly at JEDEC standard timings. Overclocking and XMP are not supported to ensure data integrity and 24/7 reliability.

Q: What warranty and typical failure rate can I expect?

A: This Samsung memory carries a one-year warranty. Built with Tier-1 components, it delivers exceptional reliability with an annualized failure rate typically below 0.5% under normal server operating conditions.

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