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Samsung M393B1K70QB0-YH9 8GB DDR3 RDIMM 1333MT/s | Reliable ECC

MPN:M393B1K70QB0-YH9 By:Samsung Warranty:1 year
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General

ModelM393B1K70QB0-YH9
Product TypeMemory Module
Compliance StandardsCE,WEEE,RoHS
Memory Capacity8 GB
Memory TechnologyDDR3
Product Voltage1.35V
RAM Speed1333MHz
RAM StandardDDR3-1333/PC3-10600
Error IdentifyingECC
Signal TypeRegistered
Column Access Strobe (CAS)CL9
RankDual Rank x4
Quantity of Pins240-pin
RAM GenreRDIMM

Engineer's Note

This 8 GB DDR3-1333 registered ECC RDIMM (M393B1K70QB0-YH9) is purpose-built for legacy server platforms running virtualization, in-memory databases, or other enterprise workloads where data integrity is paramount. Its dual-rank x4 organization maximizes channel bandwidth utilization, while the registered signal scheme and ECC actively correct single-bit errors to maintain stability in dense, multi-DIMM configurations under continuous operation.

Technical Specs & Insights

1. ECC protection actively corrects single-bit errors, preserving data integrity across large memory arrays that sustain mission-critical databases and virtualization platforms.
2. Registered signal buffering decouples the memory controller from DRAM loading, allowing dense DIMM populations without compromising command/address stability under constant uptime.
3. Low-voltage operation significantly reduces power consumption and exhaust heat per module, directly improving energy efficiency in racks where every watt drives operational cost.
4. Dual-rank organization keeps each memory channel saturated by overlapping accesses, delivering consistent bandwidth during simultaneous VM migrations and heavy multi-tenant processing.
5. A single-digit CAS latency shortens read turnaround, giving server CPUs faster access to hot data and reducing transactional latency in caching and in-memory analytics.

Why These Specs Matter

When you are managing a virtualization cluster or running an in-memory database, the DDR3-1333 Registered ECC memory module M393B1K70QB0-YH9 is not just a component—it is your silent guardian against costly downtime and data corruption. Its ECC technology actively detects and corrects single-bit errors caused by background radiation or electrical noise, which means a flipped bit in a financial transaction or a virtual machine’s state never turns into a silent failure. The registered architecture buffers command and address signals, stabilizing the heavy electrical load of fully populated servers; this allows you to scale up to 192GB or more across 24 DIMM slots without signal degradation, keeping your hypervisor responsive even under maximum consolidation. With a dual-rank x4 organization and CL9 latency, this module balances high-density capacity with efficient interleaving, delivering consistent bandwidth for hundreds of virtual desktops or an in-memory cache like Redis. The low 1.35V operating voltage directly reduces power consumption and heat generation across your data center, lowering your cooling overhead and improving long-term reliability in 24/7 operations. In a real-world virtualization farm, that combination means higher VM density per rack and fewer service interruptions; for your real-time analytics engine, it translates to predictable, low-latency data access that never sacrifices integrity for speed.

Endurance & Reliability

Capacity Planning Guide

This memory module (M393B1K70QB0-YH9) is an 8GB DDR3-1333 Registered ECC RDIMM, clearly a server-grade component. Its error correction and registered signal type suit always-on, data-integrity-critical environments. Below are specific module count and configuration recommendations for typical server workloads.

General Virtualization
To support multiple virtual machines, populate all memory channels symmetrically for balanced bandwidth. Install one 8GB RDIMM per channel across both CPU sockets; a dual-socket quad-channel server thus receives 8 modules (64 GB total). This configuration provides moderate VM density while ECC ensures guest stability and uptime.

In-Memory Database
In-memory databases demand maximum capacity and resilience. Fill every available DIMM slot with these identical 8GB modules; a 24-slot server reaches 192 GB, enabling large datasets to reside entirely in RAM. Consider memory mirroring or sparing for heightened data protection, leveraging the registered design to maintain signal integrity at full load.

High-Performance Computing
HPC nodes need peak bandwidth per core. Populate one DIMM per channel to sustain full 1333 MHz speed and CL9 latency. For a dual-socket quad-channel node, install 8 modules (64 GB) using all channels. The module’s 1.35 V low-voltage operation reduces per-node power draw, a crucial benefit in dense compute clusters.

Verified Compatibility

Rigorously tested for Dell PowerEdge R720, HP DL380p Gen8, IBM x3650 M4, and other DDR3 ECC RDIMM servers.

FAQ

Q: Can I mix this M393B1K70QB0-YH9 with other memory modules of different brands or speeds?

A: We strongly advise against mixing RDIMM brands or speeds. Even modules with identical specs may suffer from signal integrity issues. For guaranteed server stability, populate exclusively with identical M393B1K70QB0-YH9 units.

Q: Is this memory compatible with my system?

A: This DDR3-1333 Registered ECC module targets server platforms such as Intel Xeon E5-2600 v1/v2 or AMD Opteron 6300 series. Confirm your board accepts 240-pin RDIMMs and supports 1.35V low-voltage operation.

Q: What is the recommended DIMM population order for optimal performance?

A: Install identical DIMMs symmetrically across memory channels, starting from the first slot of each channel. For dual-socket systems, balance capacity equally between CPU sockets. Always refer to your server's specific population guidelines.

Q: Does this module support overclocking or XMP profiles?

A: No. It is a JEDEC-compliant server RDIMM with a fixed 1333MHz speed. Overclocking and XMP are not supported, as enterprise memory prioritizes absolute reliability and stability over performance tuning.

Q: What warranty and typical failure rate can I expect?

A: This Samsung module includes a 1-year warranty. It delivers an exceptionally low annualized failure rate inherent to enterprise-grade DRAM, backed by rigorous testing and compliance with RoHS and WEEE standards.

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