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| Model | M393B1K70QB0-YH9Q8 |
|---|---|
| Product Type | Memory Module |
| Compliance Standards | CE,WEEE,RoHS |
| Memory Capacity | 8 GB |
| Memory Technology | DDR3 |
| Product Voltage | 1.35V |
| RAM Speed | 1333MHz |
| RAM Standard | DDR3-1333/PC3-10600 |
| Error Identifying | ECC |
| Signal Type | Registered |
| Column Access Strobe (CAS) | CL9 |
| Rank | Dual Rank x4 |
| Quantity of Pins | 240-pin |
| RAM Genre | RDIMM |
Designed for server platforms, this Samsung M393B1K70QB0-YH9Q8 8GB DDR3-1333 RDIMM excels in virtualized environments and memory-intensive enterprise workloads where data integrity is paramount. Its registered signal architecture and ECC error correction, combined with a low 1.35V operating voltage and dual-rank x4 organization, deliver superior signal stability and energy efficiency while mitigating single-bit errors in 24/7 operation.
1. Registered DIMM architecture stabilizes signal integrity across fully populated server boards, allowing dense memory configurations for large-scale virtualization without compromising system reliability.
2. ECC protection silently corrects single-bit errors in real time, ensuring data accuracy in financial transactions and database operations that demand zero tolerance for silent corruption.
3. Dual Rank x4 organization fully saturates memory channels, delivering consistent memory bandwidth under heavy multi-tenant workloads where VM responsiveness must remain predictable.
4. The registered interface buffers command and address lanes, enabling stable operation with the high-capacity ranks that mission-critical enterprise workloads depend on to avoid unexpected downtime.
5. 1.35V low-voltage operation curbs power draw and thermal stress in high-density server racks, directly lowering cooling costs and extending hardware longevity around the clock.
The M393B1K70QB0-YH9Q8 is a DDR3 Registered DIMM purpose-built for server reliability. In a virtualized cluster hosting dozens of VMs, a single undetected memory error can corrupt virtual disk files or hypervisor state, leading to silent data loss and unpredictable crashes. This module’s ECC engine actively corrects single-bit errors, safeguarding transactional integrity in memory-resident databases like Redis. The Registered architecture buffers command buses, enabling you to install higher densities across all memory channels without overloading the controller—critical for scaling to the terabyte-class footprints demanded by in-memory analytics or dense virtualization. Its dual-rank design interleaves internal banks to boost bandwidth under concurrent access, ensuring smooth multi-tenant performance during peak loads. A 1.35V operating voltage reduces power consumption and thermal stress across a populated rack, cutting operational costs. In your data center, these four features mean unshakable stability, higher VM density, and lower TCO.
General Virtualization
Deploy these 8 GB DDR3‑1333 ECC Registered RDIMMs in a balanced, multi‑channel configuration to optimize memory bandwidth for dozens of concurrent VMs. On a typical dual‑socket Intel Xeon E5‑2600 platform with four memory channels per CPU, install four identical modules per processor (eight in total) to achieve 64 GB of fault‑tolerant capacity at full channel interleaving. Scale further by populating additional channels, always keeping ranks and DIMM placements symmetrical.
In‑Memory Database
Maximize capacity by filling every DIMM slot with these 8 GB dual‑rank x4 RDIMMs, leveraging the module’s ECC and registered signaling to maintain data integrity under heavy load. For a 24‑slot system this yields 192 GB, sufficient for sizeable in‑memory datasets, and ensures all memory controllers are engaged. The low 1.35 V operating voltage helps curb total power even in fully‑loaded configurations, critical for always‑on database hosts.
High Performance Computing (HPC)
Focus on bandwidth by populating a single DIMM per memory channel with these dual‑rank x4 parts. In a quad‑channel architecture, four 8 GB RDIMMs per CPU give 32 GB of high‑throughput memory; the dual‑rank design enhances bank‑level parallelism for HPC kernels. For capacity‑oriented HPC, move to two DIMMs per channel (eight per CPU, 64 GB) while keeping modules identical to preserve rank interleaving and reliable 1333 MHz operation.
Rigorously tested server memory, compatible with Dell PowerEdge R710, R610, HP DL380 G7, and more.
Q: Can I mix this M393B1K70QB0-YH9Q8 with other memory modules of different brands or speeds?
A: Mixing is not advised for server environments. All modules should match in speed, rank, and timings to ensure stability. Mismatched RDIMMs may cause POST failures or ECC errors under load.
Q: Is this memory compatible with my system?
A: This is a DDR3 Registered ECC module for Intel E5‑v2/v3/v4 or AMD Opteron 6300/7300 platforms. Verify your server board supports 1.35V RDIMMs and 8GB Dual Rank x4 configurations.
Q: What is the recommended DIMM population order for optimal performance?
A: Populate identical modules per channel, starting with the farthest slots from the CPU. For dual-socket systems, balance channels across CPUs. Consult your server’s memory population guide for specific slot numbering.
Q: Does this module support overclocking or XMP profiles?
A: No. This enterprise RDIMM adheres to JEDEC DDR3-1333 standards without XMP. Overclocking is unsupported and may compromise ECC functionality and system stability in server platforms.
Q: What warranty and typical failure rate can I expect?
A: Covered by a 1-year limited warranty. Typical annualized failure rate (AFR) for Samsung enterprise RDIMMs is below 0.2% under normal operating conditions, ensuring high reliability for 24/7 server workloads.