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| Model | M393B1K70QB0-YK0 |
|---|---|
| Compliance Standards | EU RoHS,FCC |
| Product Type | Memory Module |
| Memory Capacity | 8 GB |
| Memory Technology | DDR3 |
| Product Voltage | 1.35V |
| RAM Speed | 1600MHz |
| RAM Standard | DDR3-1600/PC3-12800 |
| Error Identifying | ECC |
| Signal Type | Registered |
| Column Access Strobe (CAS) | CL11 |
| Rank | Dual Rank x4 |
| Quantity of Pins | 240-pin |
| RAM Genre | RDIMM |
This DDR3-1600 registered ECC module with 1.35V low-voltage operation is purpose-built for legacy server platforms, where its dual-rank x4 configuration boosts memory density per channel and Registered signaling ensures stable command/address integrity under multi-DIMM loads. It excels in memory-intensive enterprise workloads such as virtualization and in-memory databases, delivering reliable data protection and sustained throughput without compromising power efficiency.
1. ECC protection corrects single-bit errors on the fly, preserving data integrity in mission-critical databases and financial transaction servers where even minor corruption is unacceptable.
2. Registered signal buffering stabilizes the command and address buses, allowing fully populated memory configurations without signal degradation in dense rack servers.
3. Dual Rank x4 organization interleaves access to maximize channel utilization, delivering consistent throughput for virtualization hosts juggling multiple heavy VMs.
4. Low-voltage operation slashes power consumption and thermal output, directly lowering energy bills and cooling demands in large-scale data center deployments.
5. The DDR3 frequency provides reliable bandwidth for steady-state enterprise workloads, ensuring smooth operation of legacy applications and mid-tier web services.
The Samsung M393B1K70QB0-YK0 is a server-grade DDR3 registered DIMM, engineered for mission-critical enterprise environments where downtime is not an option. Its four defining characteristics directly address the real-world pain points of data center operators. First, integrated ECC continuously detects and corrects single-bit memory errors caused by background cosmic radiation, preventing silent data corruption in long-running in-memory databases like SAP HANA or Redis clusters—this means transaction integrity you can trust around the clock. Second, the registered architecture with a command/address buffer stabilizes heavy memory loads, allowing dense multi-DIMM configurations without signal degradation; in a virtualized VMware cluster hosting dozens of VMs per node, this ensures consistent performance under extreme memory pressure. Third, the dual-rank x4 design interleaves access across two internal banks, boosting bandwidth and reducing latency for concurrent workloads such as large-scale OLTP queries that demand rapid, parallel data retrieval. Finally, operating at 1.35V low voltage instead of the standard 1.5V, the module slashes power consumption in fully populated racks, lowering both energy bills and cooling demands in always-on hyperscale deployments. Together, these features transform raw memory into a reliable, power-efficient foundation for your virtualized infrastructure and real-time analytics—delivering that measurable advantage where every millisecond and every milliwatt counts.
General Virtualization
For a virtualized host running multiple VMs, populate at least six of these 8 GB RDIMMs per CPU to achieve 48 GB total, leaving room for memory overcommit. A balanced configuration uses two modules per memory channel where the platform supports triple-channel or quad-channel modes, ensuring steady throughput under mixed workloads.
In-Memory Database
In-memory databases demand both capacity and reliability. Install a full set of twelve identical 8 GB RDIMMs (96 GB) across all channels to maximize bandwidth and support large working sets. ECC and registered buffering are essential here to prevent silent data corruption on mission-critical datasets.
High-Performance Computing
HPC clusters benefit from node-level memory density without sacrificing speed. Equip each dual-socket node with sixteen of these low-voltage 1.35 V modules, yielding 128 GB per node, to keep large simulation data resident in RAM. Dual-rank x4 organization helps saturate memory bus utilization per channel, while the 1600 MT/s clock rate sustains CPU-bound parallel operations efficiently.
Rigorously tested, compatible with servers like Dell PowerEdge R720, HP ProLiant DL380p Gen8, and Lenovo System x3650 M4.
Q: Can I mix this M393B1K70QB0-YK0 with other memory modules of different brands or speeds?
A: Mixing memory is not recommended for server environments. Combining different brands, speeds, or ranks may cause instability, prevent ECC functionality, or force the system to the lowest common speed, compromising reliability.
Q: Is this memory compatible with my server? Which Intel or AMD platforms are supported?
A: This RDIMM is designed for DDR3-based servers using Intel Xeon E5-2600 v1/v2 or AMD Opteron 6300 series platforms. Verify your board supports dual-rank x4, 1.35V registered ECC modules before purchasing.
Q: What is the recommended DIMM population order for optimal performance?
A: Populate identical RDIMMs per channel starting with the farthest slot from the CPU. For dual-socket boards, balance memory equally across both processors and follow the vendor’s slot numbering guide to maximize interleaving and bandwidth.
Q: Does this module support overclocking or XMP profiles?
A: No. This is an enterprise RDIMM with JEDEC-standard timings and ECC. Overclocking and XMP are not supported, as server memory prioritizes data integrity and strict compliance with platform specifications over speed tuning.
Q: What warranty and typical failure rate can I expect?
A: This module carries a one-year warranty. It features Samsung’s rigorous B-die screening and ECC, resulting in an extremely low annualized failure rate (AFR) typically below 0.5% in properly cooled, compatible server environments.