General

Engineer's Note

This Samsung M393B1K70QB0-YK0Q9 is a server-grade DDR3-1600 Registered DIMM with ECC, optimized for enterprise virtualization and memory-intensive database workloads where data integrity is critical. Its dual-rank x4 organization and 1.35V low-voltage operation enhance signal stability and energy efficiency in dense rack servers, while CL11 timing ensures reliable registered command/address buffering under heavy load.

Technical Specs & Insights

1. Registered signal type buffers the command and address lines, enabling stable multi-DIMM populations per channel and sustaining integrity in high-density virtualization hosts.
2. ECC error identification automatically corrects single-bit flips in real time, eliminating silent data corruption during prolonged financial transaction processing.
3. Dual Rank x4 organization leverages rank interleaving to overlap data access cycles, maximizing channel utilization for bandwidth-heavy in-memory analytics.
4. 1.35V low-voltage operation trims energy consumption and thermal load per node, directly lowering cooling overhead in large-scale compute clusters.
5. 1600MHz clock speed supplies sufficient throughput to keep latency-sensitive database queries moving smoothly under concurrent user spikes.

Why These Specs Matter

The M393B1K70QB0-YK0Q9 is an 8GB DDR3L Registered DIMM engineered for server environments. Its ECC, registered buffering, low voltage, and dual-rank design deliver enterprise uptime and performance. In a virtualized cluster running dozens of VMs, the registered signal buffer stabilizes high-density memory configurations—preventing boot failures and random crashes when all slots are populated—so your hypervisor can confidently scale to terabytes of RAM. Meanwhile, the ECC engine silently corrects single-bit errors caused by cosmic radiation, protecting transactional databases and in-memory caches from silent data corruption that could otherwise propagate into financial miscalculations. The dual-rank x4 organization uses rank interleaving to boost bandwidth; for an in-memory database like Redis or SAP HANA, this lowers latency under concurrent loads, accelerating customer-facing transactions. The 1.35V low-voltage operation cuts power consumption per DIMM by roughly 20% compared to standard 1.5V DDR3, yielding substantial energy savings across a rack full of servers and reducing thermal stress while delivering resilience, efficiency, and speed.

Endurance & Reliability

General Virtualization
For general virtualization hosts running multiple VMs, deploy six to eight of these 8GB RDIMMs (48–64GB total) per socket. Populate two or four identical modules per memory channel in a balanced configuration to maintain uniform memory access and maximize throughput. This approach ensures sufficient headroom for memory overcommitment while leveraging registered ECC reliability.

In-Memory Database
In-memory databases demand large capacity and fault tolerance. Populate all available slots with these 8GB dual-rank modules, targeting 128GB or more per node. A fully symmetrical configuration across all memory channels minimizes latency and maximizes bandwidth, critical for real-time analytics. Always pair identical DIMMs to sustain ECC protection and avoid performance penalties from non-uniform configurations.

High-Performance Computing
HPC workloads benefit from memory bandwidth as much as capacity. Install eight or twelve of these 1.35V low-voltage RDIMMs, filling all memory channels per processor (e.g., 64–96GB). Populate one DIMM per channel initially to achieve the highest clock speed, then expand to two DIMMs per channel only if capacity requirements override the slight frequency drop. Symmetric population is mandatory for consistent parallel performance.

Verified Compatibility

Strictly tested, compatible with Dell PowerEdge R720, HP ProLiant DL380p Gen8, Lenovo ThinkServer RD630, and more.

FAQ