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| Model | M393B5270DH0-CH9Q9 |
|---|---|
| Product Type | Memory Module |
| Compliance Standards | CE,WEEE,RoHS |
| Memory Capacity | 4 GB |
| Memory Technology | DDR3 |
| Product Voltage | 1.5V |
| RAM Speed | 1333MHz |
| RAM Standard | DDR3-1333/PC3-10600 |
| Error Identifying | ECC |
| Signal Type | Registered |
| Column Access Strobe (CAS) | CL9 |
| Rank | Single Rank x4 |
| Quantity of Pins | 240-pin |
| RAM Genre | RDIMM |
This Samsung M393B5270DH0-CH9Q9 is a server-grade DDR3 Registered ECC DIMM (RDIMM) designed for memory-intensive enterprise workloads such as virtualization, in-memory databases, and data-analytics platforms requiring uncompromising data integrity. Its single-rank x4 organization with CL9 latency and hardware ECC provides robust error correction and stable signal integrity at 1333MHz, making it an ideal choice for scaling memory capacity in legacy server deployments without sacrificing reliability.
1. ECC protection silently detects and corrects single-bit memory errors, safeguarding data integrity in always-on virtualization clusters and transactional databases where even a flipped bit can crash a workload.
2. Registered signal buffering stabilizes the command and address buses when multiple DIMMs are installed, enabling fully populated memory channels that are critical for large in-memory analytics and dense server consolidation.
3. Single Rank x4 organization minimizes per-module electrical loading, allowing the memory controller to drive more modules reliably and sustain signal quality across all slots in round-the-clock operations.
4. 1333 MT/s data rate delivers consistent bandwidth per channel, preventing memory throughput from becoming a bottleneck when numerous virtual machines execute concurrent I/O-intensive tasks.
5. A 4GB capacity per module provides a fine-grained building block for entry-level cloud nodes or caching servers, letting administrators scale total memory in precise, cost-effective increments for light hypervisor deployments.
The Samsung M393B5270DH0-CH9Q9 is a DDR3 Registered DIMM engineered for server environments where reliability and uptime are non-negotiable. Its ECC capability actively detects and corrects single-bit memory errors, a critical defense against silent data corruption that can quietly poison financial transactions or database records. When you run a virtualized cluster hosting dozens of virtual machines, an undetected bit-flip in memory can crash an entire host or propagate corrupted data to storage; ECC ensures those errors are corrected on the fly, preserving business continuity.
The Registered architecture buffers the command and address signals, stabilizing the memory bus as you populate all available DIMM slots. In a dense virtualization server or an in-memory database node, this allows you to install significantly more memory without signal degradation, letting you scale up VM density or cache larger datasets directly in RAM. The 1333MHz speed with CL9 latency provides a balanced bandwidth pipe for steady throughput under concurrent access patterns. Even as CPU cores increase, the consistent cycle time keeps latency predictable. For a real-world use case, consider a database server running an in-memory analytics workload: the Registered ECC RDIMM prevents data integrity failures during prolonged number crunching while enabling the capacity needed to hold entire fact tables in memory. This combination directly translates to faster query results, higher reliability, and a lower total cost of operations by reducing application errors and unscheduled downtime.
This 4 GB DDR3-1333 ECC Registered RDIMM (M393B5270DH0-CH9Q9) is a server memory module. Below are capacity planning recommendations for typical server workloads using this module.
General Virtualization
Populate all memory channels symmetrically, starting with one DIMM per channel (4 GB per channel) for light loads. For moderate density of 10–15 VMs, install two identical DIMMs per channel to reach 8 GB per channel and enable rank interleaving, ensuring reliable ECC operation.
In-Memory Database
Maximize capacity by filling every available DIMM slot—a 24-slot server can provide 96 GB. Configure at least two DIMMs per channel where possible to improve latency through rank interleaving, but plan for horizontal scaling if the dataset exceeds this node limit.
High-Performance Computing
Install one identical RDIMM in each memory channel to extract maximum bandwidth at 1333 MT/s. This yields 32–64 GB per dual-socket node, sufficient for many MPI simulations, and keeping all DIMMs identical prevents memory speed downgrades.
Rigorously tested server memory. Compatible with Dell PowerEdge R720, R620, HP ProLiant DL380p Gen8, and IBM x3650 M4.
Q: Can I mix this M393B5270DH0-CH9Q9 with other memory modules of different brands or speeds?
A: Mixing different brands or speeds is not advised for this ECC Registered server DIMM. It can cause signal issues and instability. Always use identical modules to ensure reliable 24/7 operation in mission-critical environments.
Q: Is this memory compatible with my system?
A: This DDR3-1333 ECC Registered DIMM targets servers with Intel 5500/5600 or AMD Opteron 6100/6200 chipset platforms. Please verify your system's memory QVL for guaranteed compatibility before purchase.
Q: What is the recommended DIMM population order for optimal performance?
A: Follow your server vendor's guide, typically populating the farthest slots per channel first. Balanced loading across all memory channels maximizes bandwidth and minimizes latency for optimal performance.
Q: Does this module support overclocking or XMP profiles?
A: No. This enterprise Registered ECC memory strictly adheres to JEDEC DDR3-1333 CL9 specifications. Overclocking and XMP profiles are unsupported, as they compromise the stability required for server environments.
Q: What warranty and typical failure rate can I expect?
A: It comes with a 1-year warranty. Samsung server memory boasts a very low annualized failure rate, typically well below 0.5%, ensuring dependable long-term operation for data centers and enterprise workloads.