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Samsung M393B5273CHO-YH9 4GB DDR3 RDIMM 1333MHz | Server ECC Memory

MPN:M393B5273CHO-YH9 By:Samsung Warranty:1 year
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General

ModelM393B5273CHO-YH9
Product TypeMemory Module
Compliance StandardsCE,WEEE,RoHS
Memory Capacity4 GB
Memory TechnologyDDR3
Product Voltage1.35V
RAM Speed1333MHz
RAM StandardDDR3-1333/PC3-10600
Error IdentifyingECC
Signal TypeRegistered
Column Access Strobe (CAS)CL9
RankDual Rank x8
Quantity of Pins240-pin
RAM GenreRDIMM

Engineer's Note

This is a server-grade DDR3 registered ECC module purpose-built for virtualization, in-memory databases, and other enterprise workloads where data integrity is non-negotiable. Its dual-rank x8 architecture maximizes interleaving performance on multi-DIMM channels, while the combination of a low 1.35V supply and registered signals guarantees stable, energy-efficient operation in high-capacity memory configurations.

Technical Specs & Insights

1. ECC protection detects and corrects single-bit errors in real time, preserving data integrity for mission-critical database and virtualization workloads.
2. Registered signal buffering stabilizes high-density memory configurations, allowing servers to scale up capacity without compromising command bus reliability.
3. Dual Rank x8 organization interleaves accesses across two internal ranks, maximizing channel utilization and consistent I/O throughput under heavy multi-tenant loads.
4. 1.35V low-voltage operation reduces datacenter energy draw and thermal output, driving lower cooling costs in dense rack deployments.
5. PC3-10600 bandwidth delivers a steady 10.6 GB/s per channel, efficiently supporting moderate transactional and web-facing service tiers.

Why These Specs Matter

Based on the RDIMM registration, 240-pin layout, and ECC support, the M393B5273CHO-YH9 is unmistakably a server-grade memory module, purpose-built for enterprise environments where downtime is not an option. Its four critical features directly address real-world data center pain points.

The Registered (buffered) design stabilizes signal integrity when fully populating memory channels, allowing dense virtualization clusters to scale to hundreds of virtual machines without boot failures or memory training errors. The ECC engine silently corrects single-bit flips caused by cosmic radiation or electrical noise, which in an in-memory database like SAP HANA would otherwise cascade into silent data corruption and costly transactional errors. Operating at a low 1.35V, the module substantially cuts thermal load and power draw across a fleet of servers, directly lowering cooling OPEX in 24/7 colocation cages. Meanwhile, the Dual Rank x8 organization feeds the memory controller with interleaved banks, boosting effective bandwidth during simultaneous query threads and live migrations, so your analytics dashboards stay responsive under peak concurrency. Every characteristic translates to higher uptime, stronger data fidelity, and predictable performance in mission-critical deployments.

Endurance & Reliability

General Virtualization
For moderate consolidation of virtual machines, populate the server with at least six to eight of these 4 GB Registered ECC DIMMs to provide 24–32 GB of fault-tolerant memory. The ECC and registered buffer ensure data integrity and stable operation under the continuous uptime demands of hypervisors like VMware or Hyper-V. Balance capacity by installing identical modules across all memory channels to maintain uniform access latency.

In-Memory Database
A memory-resident database such as Redis or SAP HANA benefits from high capacity and reliability, though this module’s 4 GB density means scaling requires many slots. Deploy a fully populated configuration across all available dual-rank x8 RDIMMs—often 12 or 16 modules for 48–64 GB—to minimize swapping. Dual-rank operation supplies interleaving benefits that lower latency, while ECC corrects in-flight errors critical for transactional data.

High-Performance Computing (HPC)
HPC workloads demand maximum memory bandwidth, so install one DIMM per channel in the minimum symmetric population that activates all memory controllers. For a dual-socket system with triple-channel architecture, use six identical M393B modules to achieve 24 GB at peak bandwidth with CL9 latency. The 1.35 V low-voltage operation reduces thermal load in dense compute clusters, complementing the registered ECC design that prevents silent data corruption during long-running simulations.

Verified Compatibility

This server-grade RDIMM has been rigorously tested and is compatible with Dell PowerEdge R720, HP ProLiant DL380p Gen8, and similar systems.

FAQ

Q: Can I mix this M393B5273CHO-YH9 with other memory modules of different brands or speeds?

A: Mixing brands or speeds is not recommended for server RDIMMs. It may cause signal integrity issues and degrade stability. Always use identical modules to ensure reliable performance in enterprise environments.

Q: Is this memory compatible with my system?

A: This DDR3-1333 RDIMM is compatible with Intel Xeon E5-2600 v1/v2 and AMD Opteron 6300 series platforms that support 240-pin 1.35V registered ECC memory. Please verify your server's qualified vendor list.

Q: What is the recommended DIMM population order for optimal performance?

A: Populate identical modules per channel starting with the slot farthest from the CPU. For dual-rank x8 RDIMMs, fill one DIMM per channel first to maintain balanced memory interleaving. Consult your system manual.

Q: Does this module support overclocking or XMP profiles?

A: No. This is a JEDEC-compliant server memory module operating at PC3-10600 (1333MHz) with CL9. It does not support XMP or overclocking. Reliability and stability are prioritized over performance tuning.

Q: What warranty and typical failure rate can I expect?

A: This module is covered by a 1-year warranty. Typical annualized failure rate (AFR) for Samsung server memory is below 0.5%, reflecting high reliability suitable for 24/7 enterprise operations.

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