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| Model | M393B5273DH0-CH9 |
|---|---|
| Compliance Standards | EU RoHS,FCC |
| Product Type | Memory Module |
| Memory Capacity | 4 GB |
| Memory Technology | DDR3 |
| Product Voltage | 1.5V |
| RAM Speed | 1333MHz |
| RAM Standard | DDR3-1333/PC3-10600 |
| Error Identifying | ECC |
| Signal Type | Registered |
| Column Access Strobe (CAS) | CL9 |
| Rank | Dual Rank x8 |
| Quantity of Pins | 240-pin |
| RAM Genre | RDIMM |
This Samsung M393B5273DH0-CH9 is a server-class DDR3 Registered DIMM with ECC, purpose-built for legacy enterprise platforms requiring maximum data integrity in virtualized environments and memory-intensive applications like in-memory databases. Its dual-rank x8 organization and registered signaling enhance signal stability under heavy load, while CL9 timing at 1333MHz delivers reliable, low-latency operation for 24/7 mission-critical workloads.
1. ECC protection actively detects and corrects single-bit memory errors, safeguarding transactional integrity for mission-critical enterprise databases and preventing silent data corruption.
2. Registered signal buffering stabilizes high-density memory configurations, allowing servers to scale DRAM population without compromising signal integrity under heavy multi-socket workloads.
3. Dual Rank x8 organization interleaves memory accesses across rank pairs, maximizing channel utilization and sustaining throughput for virtualized environments running concurrent VMs.
4. 4 GB capacity per module suits dense containerized microservices or lightweight edge computing nodes where reducing physical footprint matters more than per-node memory size.
5. 1333 MHz clock speed delivers reliable baseline bandwidth for legacy enterprise applications, keeping operational costs low while maintaining compatibility with broad server platforms.
As a server memory module, the Samsung M393B5273DH0-CH9 is purpose‑built to eliminate the silent failures that threaten data center uptime and accuracy. Its four key characteristics directly address the real‑world pain points of IT infrastructure managers.
Registered buffering restores clean command and address signals, so you can populate all memory channels in a dense virtualization host without compromising boot stability or risking signal degradation—critical when consolidating dozens of VMs on a single node. The integrated ECC engine continuously corrects single‑bit errors, preventing silent data corruption that would otherwise poison financial transaction logs or patient records in long‑running databases. With a dual‑rank x8 organization, the module enables rank interleaving, meaning your in‑memory analytics platform sees measurably lower latency as reads and writes alternate across ranks without stalling. Finally, the proven DDR3‑1333 speed at CL9 delivers consistent, predictable bandwidth that stabilizes response times for mixed workloads, from Microsoft Exchange to SAP HANA. In a 24/7 environment, these features translate directly into fewer crashes, verified data integrity, and a server that keeps performing even as DIMM counts grow.
The DDR3 Registered ECC specification (4GB RDIMM) identifies this as server memory. Below is capacity planning guidance for three typical workloads.
General Virtualization
Balance capacity and throughput by installing one 4GB RDIMM per memory channel. In a triple-channel architecture, three DIMMs per processor deliver 12 GB; a dual-socket server with six modules provides 24 GB, efficiently hosting multiple light VMs. Leave remaining slots free for future expansion without disrupting channel balance.
In-Memory Database
In-memory datasets demand maximum capacity. Populate every available DIMM slot—18 or 24 slots in a dual-socket server yield 72 GB or 96 GB. Use identical modules evenly distributed across all channels to maintain low latency and NUMA efficiency. Validate the platform’s population order to ensure all capacity is recognized and stable.
High-Performance Computing (HPC)
Bandwidth-sensitive HPC jobs require a fully balanced configuration. Install one 4GB module per channel (e.g., 8×4GB = 32 GB in a dual-socket, quad-channel system) to achieve peak throughput. If capacity needs increase, add a second identical DIMM to each channel, preserving symmetry. Never leave channels partially populated, as this degrades interleaved bandwidth.
Validated server memory. Compatible with Dell PowerEdge R710, HP DL380 G7, IBM x3650 M3.
Q: Can I mix this M393B5273DH0-CH9 with other memory modules of different brands or speeds?
A: Mixing is not recommended. For server environments, identical modules ensure ECC stability and signal integrity. Using mismatched DIMMs may force all modules down to the lowest speed, potentially causing unpredictable errors and voiding validation.
Q: Is this memory compatible with my system?
A: This DDR3 Registered ECC DIMM is designed for server platforms. It typically supports Intel Xeon 5500/5600 series or AMD Opteron 4100/6100 series chipsets. Please verify your motherboard's qualified vendor list (QVL) for this specific 1.5V RDIMM.
Q: What is the recommended DIMM population order for optimal performance?
A: Optimal ordering depends on your server board, but generally populate identical-bank slots per channel starting furthest from the CPU. Follow your platform's population guide to enable multi-channel interleaving and maximize memory throughput on all dual-rank x8 modules.
Q: Does this module support overclocking or XMP profiles?
A: No. This is a JEDEC-standard server memory module. It does not support overclocking or XMP. It runs strictly at DDR3-1333 with CL9 timings to guarantee absolute data integrity and 24/7 operational stability required in enterprise deployments.
Q: What warranty and typical failure rate can I expect?
A: This module comes with a one-year warranty. As an enterprise-grade, rigorously screened RDIMM, it exhibits an extremely low annualized failure rate (AFR), typically under 0.5% in controlled data center environments, ensuring high reliability.