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| Model | M393B5670FH0-CH9 |
|---|---|
| Product Type | Memory Module |
| Compliance Standards | CE,WEEE,RoHS |
| Memory Capacity | 2 GB |
| Memory Technology | DDR3 |
| Product Voltage | 1.5V |
| RAM Speed | 1333MHz |
| RAM Standard | DDR3-1333/PC3-10600 |
| Error Identifying | ECC |
| Signal Type | Registered |
| Column Access Strobe (CAS) | CL9 |
| Rank | Single Rank x4 |
| Quantity of Pins | 240-pin |
| RAM Genre | RDIMM |
The Samsung M393B5670FH0-CH9 is a 2 GB DDR3-1333 registered ECC RDIMM built for legacy server platforms, ideally suited for virtualization, in-memory databases, and data-critical workloads where reliability is paramount. Its single-rank x4 organization combined with CAS 9 latency and registered buffering delivers stable signal integrity and robust error correction, ensuring consistent data protection under continuous operation.
1. ECC error correction actively detects and corrects single-bit data errors, ensuring data integrity in financial transactions or database operations where memory faults are simply unacceptable.
2. Registered signal buffering stabilizes high-capacity memory configurations, allowing datacenters to scale up RAM without compromising signal quality across dozens of DIMMs per server.
3. Single Rank x4 organization improves memory access parallelism per channel, which sustains throughput for virtualized workloads hosting numerous lightweight containers or microservices.
4. CL9 column access latency delivers predictable response times under constant query loads, a crucial advantage for caching layers and in-memory databases serving bursty traffic.
5. 1333 MHz clock speed provides a balanced bandwidth floor of 10.6 GB/s, efficiently feeding older-generation server CPUs in cost-optimized web serving and edge computing deployments.
The M393B5670FH0-CH9 is a server-grade Registered ECC DDR3 memory module, purpose-built for data centers and enterprise workloads where error-free operation is not a luxury but a requirement. Its ECC capability actively detects and corrects single-bit memory errors caused by background radiation or cosmic rays—a silent threat that can corrupt financial transactions or hypervisor state in a virtualized cluster. Without ECC, a single flipped bit could crash a dozen virtual machines simultaneously, leading to costly downtime. In an in-memory database like Redis or SAP HANA, such corruption directly translates to inaccurate analytics or failed transactions. The registered buffer on this RDIMM decouples the memory bus from the CPU’s direct electrical load, enabling stable population of all DIMM slots across multiple servers—crucial when scaling a dense virtualization farm. The Single Rank x4 organization further enhances that stability by minimizing bus loading per channel, while delivering predictable bandwidth at 1333MHz with CAS 9 latency, ideal for consistent database query performance under heavy concurrency. Its 1.5V operation and industry-standard 240-pin form factor ensure seamless integration into legacy server fleets without sacrificing power efficiency or RoHS compliance. For the IT manager, this means fewer silent data corruptions, higher VM density per host, and database integrity you can bank on.
General Virtualization
For a DDR3-1333 RDIMM like the M393B5670FH0-CH9, populate modules in balanced pairs across memory channels to maximize bandwidth. Aim for at least 64–128 GB across the host by installing four to eight 2 GB DIMMs, leaving room for future scale while avoiding population imbalance that can degrade performance under multi-VM loads.
In-Memory Database
Latency-sensitive in-memory databases benefit from the registered ECC protection but require large capacity. Use the maximum supported DIMM slots per channel—typically three to four modules—to reach 96–256 GB, preserving dual-rank interleaving where possible. Even though these are 2 GB single-rank DIMMs, fully populating the server ensures your dataset stays resident and correctable errors don’t cause downtime.
High-Performance Computing
HPC workloads demand memory bandwidth more than extreme capacity. Install an identical quantity of 2 GB RDIMMs in every channel, keeping the configuration symmetric (e.g., twelve DIMMs in a dual-socket system with triple-channel architecture) to maintain uniform 1333 MHz speed and ECC reliability. Avoid mixing ranks or speeds, as that could force the memory controller to fall back to lower frequency and hurt sustained floating-point throughput.
This server memory is rigorously tested and compatible with Dell PowerEdge R710, HP DL380 G7, and IBM x3650 M3.
Q: Can I mix this M393B5670FH0-CH9 with other memory modules of different brands or speeds?
A: Mixing different brands or speeds is not recommended for server RDIMMs. It may cause instability, degrade ECC protection, and lead to unpredictable system behavior. Always use identical modules for validated, mission-critical reliability.
Q: Is this memory compatible with my system?
A: This DDR3-1333 registered ECC RDIMM targets Intel Xeon 5500/5600 series and AMD Opteron 6100 series platforms with 240-pin slots. Confirm your server board's qualified vendor list (QVL) and chipset support before ordering.
Q: What is the recommended DIMM population order for optimal performance?
A: Follow the server motherboard manual. Generally, install identical DIMMs in corresponding slots across memory channels, starting from the farthest slot from the CPU per channel, to ensure balanced interleaving and full memory bandwidth.
Q: Does this module support overclocking or XMP profiles?
A: No. As a server-grade ECC registered DIMM, it is engineered for strict JEDEC DDR3-1333 compliance and stability. Overclocking and XMP profiles are neither supported nor recommended for enterprise workloads.
Q: What warranty and typical failure rate can I expect?
A: The module is covered by a 1-year warranty. Its design and rigorous testing keep the annualized failure rate very low, typically under 0.5% in standard server operating conditions, ensuring high field reliability.