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Samsung 2GB DDR3 RDIMM 1333MHz M393B5673FH0-YH9 | Registered ECC

MPN:M393B5673FH0-YH9 By:Samsung Warranty:1 year
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General

ModelM393B5673FH0-YH9
Product TypeMemory Module
Compliance StandardsEU RoHS,FCC
Memory Capacity2 GB
Memory TechnologyDDR3
Product Voltage1.35V
RAM Speed1333MHz
RAM StandardDDR3-1333/PC3-10600
Error IdentifyingECC
Signal TypeRegistered
Column Access Strobe (CAS)CL9
RankDual Rank x8
Quantity of Pins240-pin
RAM GenreRDIMM

Engineer's Note

Optimized for virtualization and in-memory database workloads, this Samsung M393B5673FH0-YH9 2GB DDR3-1333 RDIMM leverages registered signal buffering and ECC to maintain data integrity in dense multi-rank server configurations. Its dual-rank x8 organization running at CL9 with a low 1.35V VDD ensures consistent signal stability and moderate power savings across scaled-up memory channels.

Technical Specs & Insights

1. ECC error correction proactively detects and fixes single-bit memory errors, safeguarding transactional data integrity for mission-critical database servers.
2. Registered signal buffering stabilizes high-density memory configurations, enabling seamless scaling to support larger virtual machine fleets without compromising host reliability.
3. 1.35V low-voltage operation reduces overall server energy draw and thermal output, lowering cooling costs in dense rack environments while maintaining full performance.
4. Dual Rank x8 architecture interleaves memory banks to boost bandwidth efficiency, accelerating simultaneous data access patterns typical in virtualized server workloads.
5. 1333MHz clock speed supplies sufficient throughput for reliable handling of concurrent enterprise applications, balancing cost and performance in legacy platform refreshes.

Why These Specs Matter

The server-grade RDIMM, indicated by its registered signal type and ECC functionality, is engineered for data centers where error-free operation and scalable stability are non-negotiable. In a virtualized cluster hosting dozens of VMs, a single undetected bit flip can corrupt a hypervisor’s memory table and cascade into multi-tenant outages. The module’s ECC continuously corrects single-bit errors and detects multi-bit faults, directly preventing silent data corruption that would otherwise cause application crashes or data loss. The registered design buffers command and address signals, reducing the electrical load on the memory controller. This allows you to populate all 24 DIMM slots per server without sacrificing signal integrity, a critical factor when scaling in-memory databases like SAP HANA or Redis to terabytes of RAM—where even a marginal timing instability would degrade transaction throughput.

Dual Rank x8 organization boosts bandwidth by enabling interleaving across two internal ranks, effectively overlapping access cycles. For a financial analytics engine processing real-time queries through a massive columnar database, this parallel operation significantly reduces average memory latency, delivering faster time-to-insight. The 1.35V low-voltage operation lowers the thermal footprint per DIMM, which accumulates into substantial power savings when a rack runs hundreds of modules. In a dense compute farm, that directly translates to reduced cooling demands and a longer hardware service life, safeguarding your overall total cost of ownership while upholding the robust uptime required by high-availability architectures.

Endurance & Reliability

General Virtualization
For general virtualization hosts, populate all memory channels symmetrically to maximize bandwidth and capacity. Using six or twelve of these 2GB DDR3-1333 RDIMMs per CPU (e.g., 12–24GB total) suits light to moderate VM densities. Balance DIMMs across channels to avoid performance penalties and ensure memory interleaving benefits.

In-Memory Database
In-memory databases demand both high capacity and low latency. Deploy at least eighteen modules per dual-socket server (36GB total) to hold substantial working sets. While 1333MHz speed is modest, the registered ECC reliability protects data integrity. Fill all DIMM slots with identical 2GB RDIMMs to maximize capacity, but assess whether modern datasets outgrow this density.

High-Performance Computing
HPC workloads favor bandwidth over extreme capacity per core. Configure nodes with one DIMM per channel (typically six or eight modules per CPU) to sustain peak memory throughput. The dual-rank x8 design helps achieve respectable transaction rates. For memory-bound simulations, double the count to populate second ranks, yielding 12–16GB per socket, but monitor power and thermal impact from 1.35V operation.

Verified Compatibility

Rigorously tested ECC Registered DDR3 server memory, compatible with Dell PowerEdge R720, HPE ProLiant DL380p Gen8, Lenovo System x3650 M4.

FAQ

Q: Can I mix this M393B5673FH0-YH9 with other memory modules of different brands or speeds?

A: Mixing is strongly discouraged for registered server memory. Different timings or ranks can cause instability. For mission-critical reliability, populate all channels with identical Samsung RDIMMs.

Q: Is this memory compatible with my system?

A: This DDR3-1333 ECC Registered DIMM requires a server platform with an Intel Xeon E5-2400/E5-2600 series or AMD Opteron 6300/6200 series CPU and a C602/C204 chipset. Verify 240-pin RDIMM support.

Q: What is the recommended DIMM population order for optimal performance?

A: Populate identical DIMMs in matching banks per channel, typically starting with the farthest slots from the CPU. Always consult your server's technical manual for the precise balanced configuration.

Q: Does this module support overclocking or XMP profiles?

A: No. This module adheres strictly to JEDEC DDR3-1333/PC3-10600 standards. XMP and overclocking are unsupported, as registered server memory prioritizes data integrity and 24/7 stability.

Q: What warranty and typical failure rate can I expect?

A: We provide a one-year warranty. Samsung's enterprise-grade modules exhibit extremely low failure rates, typically under 0.2% annually, ensuring dependable long-term operation in demanding server environments.

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