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| Model | M395T5160QZ4-CE66 |
|---|---|
| Product Type | Memory Module |
| Compliance Standards | EU RoHS,FCC |
| Memory Capacity | 4 GB |
| Memory Technology | DDR2 |
| Product Voltage | 1.8V |
| RAM Speed | 667MHz |
| RAM Standard | DDR2-667/PC2-5300 |
| Error Identifying | ECC |
| Signal Type | Fully Buffered |
| Column Access Strobe (CAS) | CL5 |
| Rank | Dual Rank x4 |
| Quantity of Pins | 240-pin |
| RAM Genre | FB-DIMM |
Designed specifically for legacy server platforms, this 4GB DDR2-667 FB-DIMM with ECC and Fully Buffered signal architecture ensures robust data integrity and scalable memory capacity for memory-intensive workloads such as virtualization and in-memory databases. Its dual-rank x4 configuration and CL5 latency provide balanced access efficiency, while the fully buffered interface enhances signal stability in multi-slot configurations.
1. Fully Buffered DIMM architecture isolates the memory bus with an on-module buffer, enabling dense multi-DIMM server configurations without signal degradation.
2. ECC error correction autonomously detects and fixes single-bit faults, preserving transactional integrity for critical financial and database workloads.
3. The buffered serial interface decouples DRAM from the memory controller, supporting higher capacity-per-channel deployments essential for virtualization density.
4. Dual Rank x4 organization interleaves internal banks to keep the memory pipeline saturated, delivering consistent throughput under parallel VM and container loads.
5. Tight column access latency accelerates random data retrieval, reducing query response times in latency-sensitive enterprise applications like caching and OLTP.
The Samsung M395T5160QZ4-CE66 is a server-class Fully Buffered DIMM (FB-DIMM), purpose-built for mission-critical enterprise platforms. Its ECC capability is the first line of defense against silent data corruption. In a memory-resident database like SAP HANA or an in-memory analytics engine, even a single-bit error induced by background radiation can crash a transaction or skew financial calculations. ECC detects and corrects these errors in real time, ensuring transactional integrity where accuracy is non-negotiable.
The Fully Buffered architecture directly addresses the signal integrity challenges of high-density server configurations. When populating all slots in a virtualized cluster running dozens of VMs, unbuffered ranks would suffer signal degradation, limiting total installable memory. The Advanced Memory Buffer on this FB-DIMM serializes traffic, allowing the platform to stably support large-capacity footprints without sacrificing reliability—critical for hypervisors that must host memory-hungry workloads side by side.
Additionally, the Dual Rank x4 organization doubles the number of independent memory banks accessible to the memory controller. This interleaving translates to higher sustained bandwidth and lower latency under concurrent access patterns. For a virtualization host juggling multiple SQL Server instances or a consolidated Citrix environment, that means fewer I/O stalls and smoother performance as VMs compete for memory resources. The DDR2-667 speed and 1.8V operation, while aligned with legacy generation platforms, provide a predictable, cool-running stability profile that extends the service life of installed infrastructure—an often-overlooked requirement in cost-conscious data center refresh cycles.
This FB-DIMM DDR2-667 ECC module is server memory, designed for fully buffered architectures requiring error correction and multi-channel interleaving.
General Virtualization
Populate all memory channels with identical 4GB FB-DIMMs for balanced capacity and bandwidth. For a typical dual-socket server with eight slots, install 32GB (8 x 4GB) to enable four-channel interleaving and support 10–15 moderate VMs. Always match DIMMs per channel set to avoid signaling imbalances that fully buffered topology is sensitive to.
In-Memory Database
Maximize capacity and data integrity by fully filling every DIMM slot with these 4GB modules. A 16-slot legacy FB-DIMM server can reach 64GB, ideal for moderate in-memory datasets. The ECC and buffered architecture will correct single-bit errors and report multi-bit faults—critical for transactional database consistency. Plan for identical part numbers across all sockets.
High-Performance Computing (HPC)
Optimize for memory bandwidth by installing four identical FB-DIMMs per processor, populating all channels in a quad-channel configuration. This yields 16GB per socket at peak 21.3 GB/s, sufficient for many parallel MPI jobs. Scale by deploying additional complete quad sets; avoid mixing capacities, as unbalanced configurations degrade sustained throughput in bandwidth-bound HPC codes.
Rigorously tested server FB-DIMM, compatible with Dell PowerEdge 2950/2900, HP ProLiant DL380 G5, and IBM System x3650.
Q: Can I mix this M395T5160QZ4-CE66 with other memory modules of different brands or speeds?
A: Mixing FB-DIMMs of different brands, speeds, or ranks is not recommended. For best stability, use identical modules with the same part number and populate according to the server's memory-mirroring or sparing requirements.
Q: Is this memory compatible with my system?
A: This is a 240-pin DDR2 Fully Buffered ECC DIMM designed for Intel Xeon 5000/5100/5300/5400 series platforms. Verify that your server or workstation chipset explicitly supports PC2-5300 FB-DIMMs and dual-rank x4 organization.
Q: What is the recommended DIMM population order for optimal performance?
A: For dual-processor servers, install identical FB-DIMMs in matched sets across channels, starting with the slots farthest from the CPU. Follow the platform-specific memory-mirroring order detailed in your server's hardware manual.
Q: Does this module support overclocking or XMP profiles?
A: No. This is an enterprise-grade ECC FB-DIMM adhering to JEDEC DDR2-667 specifications. It does not support overclocking, XMP, or variable voltage; it operates strictly at 1.8V with CL5 latency.
Q: What warranty and typical failure rate can I expect?
A: This module includes a one-year warranty. FB-DIMMs exhibit high reliability with an annualized failure rate (AFR) typically below 0.5% under correct thermal conditions, ensured by the integrated AMB's error correction and thermal throttling.