Intel SSDPEDMD800G4P 800 GB DC P3700 PCIe 3.0 x4, NVMe AIC (Half-Height, Half-Length) Enterprise/Write-Intensive Solid State Drive

General

Brand	Intel
Model	DC P3700
Capacity	800 GB
Usage Class	Enterprise/Write-Intensive

Interface

Host Interface	PCIe 3.0 x4, NVMe
Total Interface Bandwidth	32 Gb/s

Physical Dimension

Form Factor	AIC (Half-Height, Half-Length)

Flash & Endurance

NAND Flash	20nm MLC (HET)
Drive Writes Per Day	10
Total Bytes Written	14600 TBW

Performance

Sequential Read	2800 MB/s
Sequential Write	1900 MB/s
Random Read IOPS	450000
Random Write IOPS	95000
Average Latency	20 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	SSDPEDMD800G4

Engineer's Note

Compared with the earlier SSDPEDMD800G4, the SSDPEDMD800G4P represents a more deployment-ready 800GB DC P3700 revision, combining PCIe 3.0 x4 NVMe with 2,800/1,900 MB/s sequential performance and up to 450,000/95,000 IOPS to deliver stronger low-latency response under mixed read/write enterprise workloads. Its standout value is endurance: 20nm HET MLC rated for 10 DWPD and 14,600 TBW, making this MPN a better fit than typical same-generation NVMe drives for write-intensive databases, OLTP logging, metadata acceleration, and cache tiers that need sustained performance consistency over a long service life.

Endurance & Reliability

With an endurance rating of 14,600 TBW, the SSDPEDMD800G4P is built for sustained heavy write activity and can comfortably support typical enterprise system-disk and mixed-workload deployments over the long term. In practical terms, this level of endurance is equivalent to writing about 4 TB of data every day for 10 years, giving procurement teams strong confidence that normal server boot, logging, and application workloads will remain well within the drive’s write limits. For enterprise reliability, the drive includes power-loss protection (PLP), which helps preserve in-flight data and protects metadata integrity if power is interrupted unexpectedly. Its ultra-low UBER of 1.0E-17 means an exceptionally low probability of unrecoverable bit errors, and when combined with a 2 million hour MTBF, it supports the high data integrity and operational stability expected in business-critical environments.

Technical Specs & Insights

1. The PCIe 3.0 x4 NVMe architecture, paired with 2800 MB/s sequential read bandwidth, accelerates VM boot storms, analytics scans, and large dataset loading in latency-sensitive enterprise servers.
2. With 450,000 IOPS of random read performance, the drive sustains fast response under highly fragmented database, virtualization, and OLTP workloads where access patterns are unpredictable.
3. A 10 DWPD endurance rating makes it well suited for write-intensive enterprise applications such as logging, caching, and high-churn transactional systems that rewrite data continuously.
4. Built on 20nm MLC HET NAND, the drive balances stronger cell reliability and predictable long-term behavior, helping enterprises reduce risk in always-on production environments.
5. A typical latency of 20 µs helps minimize storage wait time, enabling tighter SLA compliance and smoother performance consistency for real-time applications and heavily consolidated infrastructure.

Endurance & Reliability

Lower capacity reference: 400 GB Higher capacity reference: 1.2 TB At 800 GB, this model sits at the sweet spot of the series. Compared with the 400 GB version, it gives much better headroom for OS images, logs, hot data, and future growth, reducing the risk of early capacity pressure in always-on enterprise workloads. Compared with the 1.2 TB option, it keeps acquisition cost and cost-per-deployment more controlled while delivering essentially the same enterprise-class sequential throughput and random IOPS. It is best suited for mid-scale deployments, such as a 3-node virtualization cluster or a compact high-performance database tier.

FAQ