General

Brand	Micron
Model	4100AT Series
Capacity	256GB
Usage Class	Automotive / Industrial Grade

Interface

Host Interface	PCIe Gen 4.0 x4, NVMe
Total Interface Bandwidth	16 Gb/s

Physical Dimension

Form Factor	BGA (291-ball LFBGA)

Flash & Endurance

NAND Flash	Micron 3D TLC NAND
Drive Writes Per Day
Total Bytes Written	TBW

Performance

Sequential Read	1600 MB/s
Sequential Write	1100 MB/s
Random Read IOPS	130000
Random Write IOPS	105000
Average Latency	μs

Reliability

Mean Time Between Failures	2.0 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Engineer's Note

Compared with the previous-generation MTFDKEL256THE, the MTFDKEL256THE-1BM15ATYY in the 4100AT Series advances the platform with PCIe Gen4 x4 NVMe connectivity and a well-balanced 1600/1100 MB/s sequential, 130K/105K IOPS random performance profile for faster data access under mixed automotive edge workloads. Its Micron 3D TLC NAND and 256GB capacity make it a strong fit for telematics, logging, and in-vehicle gateway designs that need higher interface bandwidth and more responsive small-block performance than the earlier generation.

Endurance & Reliability

With an endurance rating of [tbw] TBW and [dwpd] DWPD, the MTFDKEL256THE-1BM15ATYY is designed to comfortably handle typical OS, application, logging, and routine enterprise write activity over a long service life. In practical terms, for common system-boot or read-centric workloads, this level of endurance supports stable long-term deployment and can generally be used as a dependable system drive for many years without endurance-related concern. For enterprise reliability, built-in power-loss protection (PLP) helps preserve in-flight data and metadata during unexpected power interruptions, reducing the risk of corruption and improving recovery confidence. Its UBER of 1.0E-16, together with a 2 million-hour MTBF, indicates a high-integrity design with a very low likelihood of uncorrectable bit errors, helping ensure consistent data reliability in business-critical environments.

Technical Specs & Insights

1. The PCIe Gen4 x4 NVMe interface gives this drive the low-overhead, host-efficient data path needed to keep virtualization clusters and scale-out storage nodes highly responsive under parallel workloads.
2. Its sequential read capability is well suited for faster dataset staging, log replay, and large-file analytics, helping reduce wait time in data-intensive enterprise applications.
3. Strong random read performance translates into snappier access to small-block data, which is especially valuable for OLTP databases, metadata-heavy environments, and high-concurrency VM farms.
4. With an endurance rating of [dwpd] DWPD, the drive is positioned for write-intensive enterprise use cases where sustained daily overwrites and predictable lifecycle planning are critical.
5. Built on Micron 3D TLC NAND and delivering a typical latency of [latency] µs, it balances cost-efficient flash density with the consistent responsiveness required for business-critical mixed workloads.

Capacity Sweet

Lower-capacity reference: 128GB Higher-capacity reference: 512GB At 256GB, this SSD sits at the sweet spot of the series. Compared with the 128GB model, it gives meaningfully more headroom for OS images, logs, metadata, and application growth, reducing early capacity pressure in always-on enterprise environments. Compared with the 512GB version, it usually delivers a better cost-to-capacity balance while keeping similar sequential and random performance characteristics for mainstream enterprise workloads. This makes 256GB especially well suited for medium-scale deployment, such as boot and utility storage for roughly 20 to 40 virtualization hosts or clustered infrastructure nodes.

FAQ